1993 (5th) International Conference on Indium Phosphide and Related Materials最新文献_第3页

MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low threshold 1.3 /spl mu/m lasers 低阈值1.3 /spl μ m激光中应变InAsP/InGaAsP量子阱结构的MOVPE生长

1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380668

M. Yamamoto, N. Yamamoto, J. Nakano

引用次数: 11

Group V interdiffusion in In/sub 0.66/Ga/sub 0.33/As/ In/sub 0.66/Ga/sub 0.33/As/sub 0.7/P/sub 0.3/ quantum well structures in /sub 0.66/Ga/sub 0.33/As/ in /sub 0.66/Ga/sub 0.33/As/sub 0.7/P/sub 0.3/量子阱结构中的V族相互扩散

1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380717

W. Gillin, I. Bradley, W. L. Foo, K. Homewood, S. Perrin, P.C. Spurdens

{"title":"Group V interdiffusion in In/sub 0.66/Ga/sub 0.33/As/ In/sub 0.66/Ga/sub 0.33/As/sub 0.7/P/sub 0.3/ quantum well structures","authors":"W. Gillin, I. Bradley, W. L. Foo, K. Homewood, S. Perrin, P.C. Spurdens","doi":"10.1109/ICIPRM.1993.380717","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380717","url":null,"abstract":"The diffusion coefficient for arsenic and phosphorous interdiffusion has been measured as a function of temperature in In/sub 0.66/Ga/sub 0.33/As/ In/sub 0.66/Ga/sub 0.33/As/sub 0.7/P/sub 0.3/ strained quantum wells, using the photoluminescence from the n = 1 electron to heavy hole transition. The authors have used the shift in the photoluminescence from a 100/spl Aring/ single quantum well of In/sub 0.66/Ga/sub 0.33/As in In/sub 0.66/Ga/sub 0.33/As/sub 0.7/P/sub 0.3/ barriers with annealing to monitor the interdiffusion. In this system there is no concentration gradient to drive group III interdiffusion and therefore the variation in the photoluminescence transition energy was modeled using only phosphorous/arsenic interdiffusion in the model. By performing several anneals to a single sample and measuring the shift in the photoluminescence after each anneal the interdiffusion was monitored as a function of time. Between temperatures of 900/spl deg/C and 700/spl deg/C the diffusion coefficient, D, can be described using the relationship D = D/sub o/exp(-E/sub A//kT) where D/sub o/ = 507 cm/sup 2//s and E/sub A/ = 3.9 eV.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134502794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Increased breakdown voltages in In/sub 1-x-y/Ga/sub x/Al/sub y/As/InAlAs FETs in /sub - 1-x-y/Ga/sub -x /Al/sub -y/ As/InAlAs fet击穿电压增加

1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380590

A. Fathimulla, H. Hier, J. Abrahams

引用次数: 0

High-performance 0.15 /spl mu/m-gatelength OMVPE-grown InAlAs/InGaAs MODFETs 高性能0.15 /spl mu/m栅极长度omvppe生长InAlAs/InGaAs modfet

1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380598

I. Adesida, K. Nummila, M. Tong, C. Caneau, R. Bhat

引用次数: 0

Nonlinear behavior of InP:Fe under high electric field 高电场作用下InP:Fe的非线性行为

1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380645

K. Turki, G. Picoli, J. Viallet

引用次数: 1

Improved Al/InP Schottky barriers by coimplantation of Be/P Be/P共注入改善Al/InP肖特基屏障

1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380638

R. Tyagi, T. Chow, J. Borrego, K.A. Pisarczyk

引用次数: 8

High performance In/sub 0.47/Ga/sub 0.53/As tunnel junctions grown by chemical beam epitaxy on InP and GaAs and Si substrates 用化学束外延在InP和GaAs和Si衬底上生长出高性能In/sub 0.47/Ga/sub 0.53/As隧道结

1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380669

M. Vilela, A. Freundlich, A. Bensaoula, N. Medelci

引用次数: 2

Interface roughness scattering in AlAs/InGaAs/AlAs RTD with InAs subwell 带InAs亚井的AlAs/InGaAs/AlAs RTD界面粗糙度散射

1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380629

P. Roblin, R. Potter, A. Fathimulla

引用次数: 0

Optimization of the buffer thickness for high performance 1 /spl mu/m gate GaAs MESFETs on InP substrate for OEICs oeic用InP衬底上高性能1 /spl mu/m栅极GaAs mesfet缓冲厚度的优化

1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380596

M. Chertouk, A. Boudiaf, A. Chovet, R. Azoulay, A. Clei

{"title":"Optimization of the buffer thickness for high performance 1 /spl mu/m gate GaAs MESFETs on InP substrate for OEICs","authors":"M. Chertouk, A. Boudiaf, A. Chovet, R. Azoulay, A. Clei","doi":"10.1109/ICIPRM.1993.380596","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380596","url":null,"abstract":"GaAs/InP FETs on InP appear to be promising for the realization of optoelectronic integrated circuits (OEICs) for low and high bit-rate optical communication. However, there are two fundamental problems, the 3.9% lattice mismatch and 210/sup -6///spl deg/C difference in thermal expansion coefficients leading to the formation of a high density of dislocations and to a high level of tensile stress in the GaAs layer. For possible applications it is mandatory to investigate the effect of this mismatch through the buffer thickness on the DC and microwave performance of GaAs/InP MESFETs. An improvement in the DC and microwave performance of GaAs MESFETs on InP substrate has been observed when increasing the undoped GaAs buffer thickness. For a 3 /spl mu/m thick GaAs buffer, the 1 /spl mu/m gate MESFET has a maximum extrinsic transconductance larger than 230mS/mm, a current gain cut-off frequency of 15 GHz, a maximum frequency of oscillation of 28 GHz, a minimum noise figure of 1 dB at 4 GHz and a Hooge parameter of 2.5 10/sup -5/. Such results clearly indicate the potential of GaAs/InP MESFETs for application to OEICs.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131329231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Submicron pseudomorphic double heterojunction InAlAs/In/sub 0.7/Ga/sub 0.3/As HEMTs with high cut-off and current-drive capability 亚微米伪晶双异质结InAlAs/In/sub 0.7/Ga/sub 0.3/As hemt具有高截止和电流驱动能力

1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI: 10.1109/ICIPRM.1993.380583

Y. Kwon, D. Pavlidis, T. Brock, G. Ng, K. Tan, J. Velebir, D. Streit

{"title":"Submicron pseudomorphic double heterojunction InAlAs/In/sub 0.7/Ga/sub 0.3/As HEMTs with high cut-off and current-drive capability","authors":"Y. Kwon, D. Pavlidis, T. Brock, G. Ng, K. Tan, J. Velebir, D. Streit","doi":"10.1109/ICIPRM.1993.380583","DOIUrl":"https://doi.org/10.1109/ICIPRM.1993.380583","url":null,"abstract":"Lattice-matched and strained (pseudomorphic) InAlAs/InGaAs high electron mobility transistors (HEMTs) are recognized as the most suitable components for operation at millimeter-waves. Pseudomorphic InAlAs/In/sub x/Ga/sub 1-x/As (x>0.53) HEMTs are particularly promising candidates for high-frequency and low-noise applications due to the superior material properties of the strained InGaAs channel. The InGaAs channel with excess indium provides improved low-field mobility characteristics, better carrier confinement and higher peak velocity due to the larger /spl Gamma/-to-L valley separation, compared with lattice-matched channels. The authors address such pseudomorphic designs using double heterostructure (DH) HEMT designs. They demonstrate the possibility of combining pseudomorphic rather than lattice-matched channels with a double heterostructure design to optimize the frequency and current drive characteristics of DH-HEMTs. The DC and microwave characteristics of the fabricated submicron DH-HEMTs are presented and compared with single heterostructure (SH)-devices processed at the same time. Improved f/sub max/ and higher current density have been obtained with the pseudomorphic DH-HEMTs compared to SH-HEMTs.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128834598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9