in /sub - 1-x-y/Ga/sub -x /Al/sub -y/ As/InAlAs fet击穿电压增加

1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI:10.1109/ICIPRM.1993.380590

A. Fathimulla, H. Hier, J. Abrahams

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引用次数: 0

摘要

本文报道了与InP晶格匹配的In/sub - 1-x-y/Ga/sub -x /Al/sub -y/ As fet的性能。通过在InGaAs/InAlAs fet通道中添加Al，可以改善漏源击穿电压。微波增益可与InGaAs/InAlAs fet相媲美。讨论了直流和射频特性。

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Increased breakdown voltages in In/sub 1-x-y/Ga/sub x/Al/sub y/As/InAlAs FETs

The authors report the performance of In/sub 1-x-y/Ga/sub x/Al/sub y/As FETs lattice-matched to InP. An improvement in the drain-source breakdown voltage was achieved by adding Al in the channel of InGaAs/InAlAs FETs. The microwave gains are comparable to those of the InGaAs/InAlAs FETs. The DC and RF characteristics are discussed.<>

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1993 (5th) International Conference on Indium Phosphide and Related Materials

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