High performance In/sub 0.47/Ga/sub 0.53/As tunnel junctions grown by chemical beam epitaxy on InP and GaAs and Si substrates

1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI:10.1109/ICIPRM.1993.380669

M. Vilela, A. Freundlich, A. Bensaoula, N. Medelci

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引用次数: 2

Abstract

High performance In/sub 0.47/Ga/sub 0.53/As tunnel junctions were successfully realized using chemical beam epitaxy on InP, GaAs and GaAs/Si substrates. The achievement of high performance tunnel junctions, besides extremely high hole and electron concentrations requires low interdiffusion of dopant species in the narrow space-charge region of the junction during the device growth procedure. Therefore a relatively low temperature growth process and a good control of interface properties is required. Using chemical beam epitaxy (CBE) high quality InP and InGaAs can be grown at temperatures substantially lower than those used in more conventional liquid phase epitaxy and metalorganic vapor phase epitaxy techniques rendering CBE specially attractive for such tunnel junction fabrication. The peak currents obtained on samples grown on InP substrates are the highest ever reported for such tunnel junctions. These results demonstrate that CBE is perfectly suited for fabrication of InP/InGaAs tandem solar cells.<>

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用化学束外延在InP和GaAs和Si衬底上生长出高性能In/sub 0.47/Ga/sub 0.53/As隧道结

利用化学束外延技术在InP、GaAs和GaAs/Si衬底上成功实现了高性能的In/sub 0.47/Ga/sub 0.53/As隧道结。为了实现高性能的隧道结，除了极高的空穴和电子浓度外，还需要在器件生长过程中，在结的狭窄空间电荷区中掺杂物质的低互扩散。因此，需要一个相对低温的生长过程和良好的界面性能控制。使用化学束外延(CBE)可以在比传统液相外延和金属有机气相外延技术低得多的温度下生长高质量的InP和InGaAs，这使得CBE对这种隧道结制造特别有吸引力。在InP衬底上生长的样品所获得的峰值电流是此类隧道结所报道的最高的。这些结果表明，CBE非常适合于制造InP/InGaAs串联太阳能电池。

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1993 (5th) International Conference on Indium Phosphide and Related Materials

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