High-performance 0.15 /spl mu/m-gatelength OMVPE-grown InAlAs/InGaAs MODFETs

Abstract

The DC and microwave performance of modulation-doped field effect transistors (MODFETs) with 0.15 /spl mu/m T-gates fabricated in a organo-metallic vapor phase epitaxy (OMVPE)-grown lattice-matched InAlAs/InGaAs/InP heterostructure are reported. Devices with extrinsic transconductance, g/sub m/, as high as 1080 mS/mm at 508 mA/mm and a unity current-gain cutoff frequency, f/sub T/, of 187 GHz are shown. To date, this is the highest f/sub T/ reported for OMVPE-grown MODFETs.<>