V. Drouot, M. Gendry, G. Hollinger, C. Santinelli, X. Letartre, P. Viktorovitch
{"title":"在InP上MBE生长富铟伪晶in /sub x/Ga/sub 1-x/As/ in /sub 0.52/Al/sub 0.48/As结构的高电子迁移率","authors":"V. Drouot, M. Gendry, G. Hollinger, C. Santinelli, X. Letartre, P. Viktorovitch","doi":"10.1109/ICIPRM.1993.380586","DOIUrl":null,"url":null,"abstract":"High electron mobility pseudomorphic In/sub x/Ga/sub 1-x/As/InAlAs heterostructures have been fabricated on InP for a wide range of In composition and growth temperatures. Both mobility and carrier concentrations can be increased by increasing the indium content in the channel up to x=0.75. The highest performance has been obtained with x=0.75 for a growth temperature of 500/spl deg/C, when adapted growth conditions or growth interruptions are used to reduce the interface roughness. The electron mobility of such a structure reaches 14,500 cm/sup 2//V.s at 300 K and 101,000 cm/sup 2//V.s at 77 K for a two-dimensional electron gas concentration of 2.4 10/sup 12/ cm/sup -2/.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High electron mobility in indium-rich pseudomorphic In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As structures grown by MBE on InP\",\"authors\":\"V. Drouot, M. Gendry, G. Hollinger, C. Santinelli, X. Letartre, P. Viktorovitch\",\"doi\":\"10.1109/ICIPRM.1993.380586\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High electron mobility pseudomorphic In/sub x/Ga/sub 1-x/As/InAlAs heterostructures have been fabricated on InP for a wide range of In composition and growth temperatures. Both mobility and carrier concentrations can be increased by increasing the indium content in the channel up to x=0.75. The highest performance has been obtained with x=0.75 for a growth temperature of 500/spl deg/C, when adapted growth conditions or growth interruptions are used to reduce the interface roughness. The electron mobility of such a structure reaches 14,500 cm/sup 2//V.s at 300 K and 101,000 cm/sup 2//V.s at 77 K for a two-dimensional electron gas concentration of 2.4 10/sup 12/ cm/sup -2/.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380586\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380586","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High electron mobility in indium-rich pseudomorphic In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As structures grown by MBE on InP
High electron mobility pseudomorphic In/sub x/Ga/sub 1-x/As/InAlAs heterostructures have been fabricated on InP for a wide range of In composition and growth temperatures. Both mobility and carrier concentrations can be increased by increasing the indium content in the channel up to x=0.75. The highest performance has been obtained with x=0.75 for a growth temperature of 500/spl deg/C, when adapted growth conditions or growth interruptions are used to reduce the interface roughness. The electron mobility of such a structure reaches 14,500 cm/sup 2//V.s at 300 K and 101,000 cm/sup 2//V.s at 77 K for a two-dimensional electron gas concentration of 2.4 10/sup 12/ cm/sup -2/.<>
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