Modern Electronic Materials最新文献

Synaptic behavior of a composite multiferroic heterostructure FeBSiC – PZT at resonant excitation 复合多铁氧体异质结构 FeBSiC - PZT 在共振激励下的突触行为

Modern Electronic Materials Pub Date : 2024-07-04 DOI: 10.3897/j.moem.10.2.124089

F. Fedulov, D. V. Savelev, Y. Fetisov

{"title":"Synaptic behavior of a composite multiferroic heterostructure FeBSiC – PZT at resonant excitation","authors":"F. Fedulov, D. V. Savelev, Y. Fetisov","doi":"10.3897/j.moem.10.2.124089","DOIUrl":"https://doi.org/10.3897/j.moem.10.2.124089","url":null,"abstract":"Nowadays, one of the promising ways for the development of computing systems with high performance and low energy consumption is the creation of artificial synaptic devices that imitate the functions of biological synapses. Such devices have a significant potential for effectively solving problems of pattern recognition, classification, control, and the treatment of diseases of the nervous system. The work demonstrates the imitation of synaptic behavior in a composite multiferroic heterostructure based on the piezoceramics of lead zirconate titanate (PZT) and the amorphous magnetic alloy Metglas. The characteristics of the heterostructure were measured by resonant excitation of the magnetoelectric (ME) effect and applying electric field pulses of various amplitudes and polarities. The ME coefficient αE was considered as a synaptic weight, and the output electrical voltage of the heterostructure as a postsynaptic potential. The study demonstrates the possibility of simulating long-term potentiation (LTP) and depression (LTD) in the ME heterostructure, as well as spike-timing-dependent plasticity (STDP). This work shows promise for creating neuromorphic computing systems based on multiferroic composite heterostructures.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141677314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optically transparent highly conductive contact based on ITO and copper metallization for solar cells 基于 ITO 和铜金属化的光学透明高导电触点，用于太阳能电池

Modern Electronic Materials Pub Date : 2024-07-02 DOI: 10.3897/j.moem.10.2.129762

Vladimir M. Kravchenko, V. Malyutina-Bronskaya, H. S. Kuzmitskaya, Anton V. Nestsiaronak

引用次数: 0

Synthesis of silicon-carbon films by induction-assisted plasma-chemical deposition 通过感应辅助等离子体化学沉积法合成硅碳薄膜

Modern Electronic Materials Pub Date : 2023-12-12 DOI: 10.3897/j.moem.9.4.116552

A. A. Temirov, I. Kubasov, A. Turutin, T. Ilina, A. Kislyuk, Dmitry A. Kiselev, E. A. Skryleva, Nikolai A. Sobolev, I. A. Salimon, Nikolai V. Batrameev, M. D. Malinkovich, Yuri N. Parkhomenko

{"title":"Synthesis of silicon-carbon films by induction-assisted plasma-chemical deposition","authors":"A. A. Temirov, I. Kubasov, A. Turutin, T. Ilina, A. Kislyuk, Dmitry A. Kiselev, E. A. Skryleva, Nikolai A. Sobolev, I. A. Salimon, Nikolai V. Batrameev, M. D. Malinkovich, Yuri N. Parkhomenko","doi":"10.3897/j.moem.9.4.116552","DOIUrl":"https://doi.org/10.3897/j.moem.9.4.116552","url":null,"abstract":"Silicon-carbon films are of great interest as diamond-like materials combining unique properties, e.g. high hardness, adhesion to a wide range of materials, abrasion resistance, chemical resistance, low friction coefficient and biocompatibility. The presence of silicon in the films significantly reduces their inner mechanical stress as compared to diamond films. Currently, the films are used in industry, primarily, as solid lubricants and protective coatings. There are a large number of silicon-carbon film synthesis methods the most widely used of which are various options of chemical vapor deposition. A new silicon-carbon film synthesis technique has been suggested and tested. The technique is based on the use of high-frequency induction for obtaining plasma of silicon and carbon vapors supplied to the reaction chamber from an external source. Impurity-free silicon-carbon films containing 63–65 % carbon atoms with sp3 orbital hybridization have been synthesized on Sitall substrates. The composition, surface roughness and friction coefficient of the impurity-free silicon-carbon films synthesized using the suggested technology have been studied. The possibility of implementing resistive switching in thin silicon-carbon films in cross-bar structures with metallic electrodes has been analyzed.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139009701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrophysical properties, memristive and resistive switching of charged domain walls in lithium niobate 铌酸锂带电畴壁的电物理特性、忆阻性和阻性开关

Modern Electronic Materials Pub Date : 2023-12-12 DOI: 10.3897/j.moem.9.4.116646

A. Kislyuk, I. Kubasov, A. A. Temirov, A. Turutin, A. Shportenko, Viktor V. Kuts, M. D. Malinkovich

{"title":"Electrophysical properties, memristive and resistive switching of charged domain walls in lithium niobate","authors":"A. Kislyuk, I. Kubasov, A. A. Temirov, A. Turutin, A. Shportenko, Viktor V. Kuts, M. D. Malinkovich","doi":"10.3897/j.moem.9.4.116646","DOIUrl":"https://doi.org/10.3897/j.moem.9.4.116646","url":null,"abstract":"Charged domain walls (CDWs) in ferroelectric materials raise both fundamental and practical interest due to their electrophysical properties differing from bulk ones. On a microstructure level, CDWs in ferroelectrics are 2D defects separating regions with different spontaneous polarization vector directions. Screening of electric field of the CDW's bound ionic charges by mobile carriers leads to the formation of elongated narrow channels with an elevated conductivity in initially dielectric materials. Controlling the position and inclination angle of CDW relative to the spontaneous polarization direction, one can change its conductivity over a wide range thus providing good opportunities for developing memory devices, including neuromorphic systems. This review describes the state of art in the formation and application of CDWs in single crystal uniaxial ferroelectric lithium niobate (LiNbO3, LN), as resistive and memristive switching devices. The main CDWs formation methods in single crystal and thin-film LN have been described, and modern data have been presented on the electrophysical properties and electrical conductivity control methods of CDWs. Prospects of CDWs application in resistive and memristive switching memory devices have been discussed.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138977100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis and piezoelectric properties of freestanding ferroelectric films based on barium strontium titanate 基于钛酸锶钡的独立铁电薄膜的合成与压电特性

Modern Electronic Materials Pub Date : 2023-12-12 DOI: 10.3897/j.moem.9.4.115181

Michael S. Afanasiev, Dmitry A. Kiselev, A. Sivov, G. Chucheva

{"title":"Synthesis and piezoelectric properties of freestanding ferroelectric films based on barium strontium titanate","authors":"Michael S. Afanasiev, Dmitry A. Kiselev, A. Sivov, G. Chucheva","doi":"10.3897/j.moem.9.4.115181","DOIUrl":"https://doi.org/10.3897/j.moem.9.4.115181","url":null,"abstract":"In this work, the membrane structures based on lead-free ferroelectric barium strontium titanate with composition Ba0.8Sr0.2TO3 (BSTO) were fabricated by a magnetron sputtering method. The formation of a single-phase Ba0.8Sr0.2TO3 with thickness of 300 nm sintered on Si substrate is confirmed by XRD analysis. It is shown that films without a silicon substrate exhibit ferroelectric and piezoelectric properties. The piezoelectric and ferroelectric behaviors of BSTO thin film without a silicon substrate were confirmed through a piezoelectric force microscopy and Kelvin probe force microscopy and measurements of the effective piezoelectric coefficients (d33 and d15). Images of the residual potential of polarized areas have been obtained on the membranes, which are stable over time despite the absence of a lower electrode. Additionally, a local of ferroelectric hysteresis loop has been observed. A combination of the structural and piezoelectric measurements reveals that it possible to create freestanding ferroelectric films based on Ba0.8Sr0.2TO3 system, establishing it as a promising candidate for high-performance electromechanical applications.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139009008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Crystalline structure of 0.65BiFeO3–0.35Ba1-xSrxTiO3 solid solutions in the vicinity of the morphotropic phase boundary 各向形态相边界附近 0.65BiFeO3-0.35Ba1-xSrxTiO3 固溶体的晶体结构

Modern Electronic Materials Pub Date : 2023-12-12 DOI: 10.3897/j.moem.9.4.116620

M. Silibin, P. Sklyar, Vadim D. Zhivulko, S. I. Latushko, D. V. Zheludkevich, Dmitry V. Karpinsky

{"title":"Crystalline structure of 0.65BiFeO3–0.35Ba1-xSrxTiO3 solid solutions in the vicinity of the morphotropic phase boundary","authors":"M. Silibin, P. Sklyar, Vadim D. Zhivulko, S. I. Latushko, D. V. Zheludkevich, Dmitry V. Karpinsky","doi":"10.3897/j.moem.9.4.116620","DOIUrl":"https://doi.org/10.3897/j.moem.9.4.116620","url":null,"abstract":"Complex transition metal oxides are distinguished for a close interrelation between their type of crystal structure and electrical and magnetic properties, thus determining their practical importance. Bismuth ferrite based solid solutions contain simultaneously both dipole electric and magnetic ordering thus expanding their potential applications as external impact sensors. The sensitivity of these compositions to external fields is largely dependent on their structural state. 0.65BiFeO3–0.35Ba1-xSrxTiO3 solid solutions (0 ≤ x ≤ 1) the compositions of which are close to the rhombohedral/cubic morphotropic phase boundary have metastable structures and are therefore promising functional materials. The crystal structure and morphology of 0.65BiFeO3–0.35Ba1-xSrxTiO3 solid solutions has been studied using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and energy dispersive X-ray spectroscopy. The chemical substitution of barium ions for strontium ones has been found to reduce the magnitude of rhombohedral distortions and decrease the unit cell parameters for all the substituted compounds. Solid solutions with x ≥ 0,25 have single-phase structure and cubic unit cells, their grain size decreasing with an increase in the concentration of the substituting ions. The results of structural studies obtained using Raman spectroscopy suggest the presence of rhombohedral distortions in the structures of all the compositions studied. The results of structural studies have allowed identifying the sequence of changes in the phase state and lattice parameter of the compounds in the vicinity of the rhombohedral/cubic morphotropic phase boundary. The concentration ranges in which the compounds have single-phase and two-phase structures have been found. The concentration stability range of the polar rhombohedral phase has been corrected on the basis of the structural data obtained using local and microscopic methods.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139008446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mechanical properties of medium-temperature thermoelectric materials based on tin and lead tellurides 基于锡和碲化铅的中温热电材料的机械特性

Modern Electronic Materials Pub Date : 2023-12-12 DOI: 10.3897/j.moem.9.4.116423

Mikhail G. Lavrentev, Mikhail V. Voronov, Aleksey A. Ivanov, Viktoriya P. Panchenko, N. Tabachkova, Maksim K. Tapero, Ivan Yu. Yarkov

{"title":"Mechanical properties of medium-temperature thermoelectric materials based on tin and lead tellurides","authors":"Mikhail G. Lavrentev, Mikhail V. Voronov, Aleksey A. Ivanov, Viktoriya P. Panchenko, N. Tabachkova, Maksim K. Tapero, Ivan Yu. Yarkov","doi":"10.3897/j.moem.9.4.116423","DOIUrl":"https://doi.org/10.3897/j.moem.9.4.116423","url":null,"abstract":"The strength and thermoelectric properties of PbTe and Sn0.9Pb0.1Te medium-temperature polycrystalline specimens with p and n conductivity types, respectively, have been studied. The specimens have been produced using extrusion and spark plasma sintering. The strength parameters of the materials were studied using uniaxial compression at 20 to 500 °C. The structure of the materials was studied using X-ray diffraction and electron microscopy. The electrical conductivity and the Seebeck coefficient were measured simultaneously using the four-probe and differential methods. The temperature conductivity and the specific heat capacity were measured using the laser flash and differential scanning calorimetry methods.\u0000 The PbTe and Sn0.9Pb0.1Te materials produced using extrusion and spark plasma sintering prove to be single-phase and have homogeneous compositions. For comparable synthesis methods, the dislocation density in the Sn0.9Pb0.1Te specimens is by an order of magnitude lower than in the PbTe ones.\u0000 Study of the mechanical properties of n and p conductivity type specimens over a wide temperature range from 20 to 500 °C has shown that their deformation is plastic and has no traces of brittle fracture. For these plastic materials, the strength criterion has been accepted to be the arbitrary yield stress corresponding to the stress at a 0.2% deformation. The 20 °C yield stress of PbTe and Sn0.9Pb0.1Te is far higher for the specimens produced by extrusion. For all the test temperatures and synthesis methods the Sn0.9Pb0.1Te specimens have a higher strength than the PbTe ones.\u0000 The PbTe and Sn0.9Pb0.1Te specimens produced by extrusion have better thermoelectric properties than the spark plasma sintered ones. The heat conductivity of the PbTe and Sn0.9Pb0.1Te specimens is almost the same regardless of compaction method.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139009301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic properties of Sr1.5La0.5FeMoO6-δ depending on the phase composition of the reaction mixture 取决于反应混合物相组成的 Sr1.5La0.5FeMoO6-δ 的磁特性

Modern Electronic Materials Pub Date : 2023-12-12 DOI: 10.3897/j.moem.9.4.116107

M. Yarmolich, N. Kalanda, A. Petrov, Dmitry A. Kiselev, Nikolay A. Bosak

{"title":"Magnetic properties of Sr1.5La0.5FeMoO6-δ depending on the phase composition of the reaction mixture","authors":"M. Yarmolich, N. Kalanda, A. Petrov, Dmitry A. Kiselev, Nikolay A. Bosak","doi":"10.3897/j.moem.9.4.116107","DOIUrl":"https://doi.org/10.3897/j.moem.9.4.116107","url":null,"abstract":"This paper presents investigations of phase transformations during the crystallization of Sr1.5La0.5FeMoO6-δ by the solid-phase technique from a stoichiometric mixture of oxides MoO3, La2O3 and Fe2O3 and SrCO3 and precursors Sr0.5La0.5FeO3 and SrMoO4. Using XRD and thermogravimetric analyses, the influence of synthesis modes on the chemical processes occurring during the formation of double perovskite was studied. It has been established that the synthesis of lanthanum-strontium ferromolybdate in a mixture of oxides proceeds through a number of series-parallel stages. At the initial stage of interaction, the resulting lanthanum-strontium ferromolybdate is enriched with iron and its composition changes during the reaction towards an increase in the molybdenum content. As the temperature increases, the content of double perovskite increases, and the concentration of the secondary phase SrMoO4 does not disappear to zero until the synthesis temperature, which indicates that solid-phase reactions with the formation of a solid solution Sr1.5La0.5FeMoO6-δ from oxides are difficult to occur. It was determined that to minimize the influence of intermediate reaction products it is necessary to use precursors Sr0.5La0.5FeO3 and SrMoO4. Based on the results of studying the temperature dependences of the degree of phase transformations during the crystallization of double perovskite, combined heating modes were optimized. The use of optimized synthesis modes made it possible to obtain single-phase Sr1.5La0.5FeMoO6-δ powder with the superstructural ordering (82%), the Curie temperature of 450 K and a magnetization value of 40.9 A · m2 · kg-1 at T = 77 K in a magnetic field with induction B ≥ 0.86 T.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139009354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Theoretical Study of Doping in GaOOH for Electronics Applications 电子应用中GaOOH掺杂的理论研究

Modern Electronic Materials Pub Date : 2023-11-10 DOI: 10.3390/electronicmat4040013

Masaya Ichimura

{"title":"Theoretical Study of Doping in GaOOH for Electronics Applications","authors":"Masaya Ichimura","doi":"10.3390/electronicmat4040013","DOIUrl":"https://doi.org/10.3390/electronicmat4040013","url":null,"abstract":"GaOOH, having a bandgap of 4.7–4.9 eV, can be regarded as one of several ultrawide-bandgap (UWBG) semiconductors, although it has so far mainly been used as a precursor material of Ga2O3. To examine the possibility of valence control and application in electronics, impurity levels in GaOOH are investigated using the first-principles density-functional theory calculation. The density values of the states of a supercell including an impurity atom are calculated. According to the results, among the group 14 elements, Si is expected to introduce a shallow donor level, i.e., a free electron is introduced. On the other hand, Ge and Sn introduce a localized state about 0.7 eV below the conduction band edge, and thus cannot act as an effective donor. While Mg and Ca can introduce a free hole and act as a shallow acceptor, Zn and Cd introduce acceptor levels away from the valence band. The transition metal elements (Fe, Co, Ni, Cu) are also considered, but none of them are expected to act as a shallow dopant. Thus, the results suggest that the carrier concentration can be controlled if Si is used for n-type doping, and Mg and Ca for p-type doping. Since GaOOH can be easily deposited using various chemical techniques at low temperatures, GaOOH will potentially be useful for transparent electronic devices.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135186648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Size-Controlled ZnO Nanoparticles Synthesized with Thioacetamide and Formation of ZnS Quantum Dots 用硫乙酰胺合成尺寸可控的ZnO纳米粒子及ZnS量子点的形成

Modern Electronic Materials Pub Date : 2023-10-12 DOI: 10.3390/electronicmat4040012

Ju-Seong Kim, Jonghyun Choi, Won Kook Choi

引用次数: 0