Modern Electronic Materials最新文献_第2页

Optical properties of YSAG : Yb : Er ceramics with Sc3+ cations in the dodecahedral and octahedral positions of the garnet crystal lattice 石榴石晶格十二面体和八面体位置含有 Sc3+ 阳离子的 YSAG : Yb : Er 陶瓷的光学特性

Modern Electronic Materials Pub Date : 2023-10-12 DOI: 10.3897/j.moem.9.3.115403

V. Tarala, Alexander A. Kravtsov, S.V. Kuznetsov, F. Malyavin, O. Chapura, E. A. Brazhko, L. Kozhitov

{"title":"Optical properties of YSAG : Yb : Er ceramics with Sc3+ cations in the dodecahedral and octahedral positions of the garnet crystal lattice","authors":"V. Tarala, Alexander A. Kravtsov, S.V. Kuznetsov, F. Malyavin, O. Chapura, E. A. Brazhko, L. Kozhitov","doi":"10.3897/j.moem.9.3.115403","DOIUrl":"https://doi.org/10.3897/j.moem.9.3.115403","url":null,"abstract":"Optical ceramics based on YSAG : Yb : Er with the compositions {Y1.86Yb0.45Er0.09Sc0.6}[Al1.6Sc0.4]Al3O12 and {Y2.26Yb0.45Er0.09Sc0.2}[Al1.0Sc1.0]Al3O12 were fabricated by vacuum sintering from pre-synthesized nanocrystalline powders. A comparative analysis of these samples with optical ceramics of the compositions {Y2.34Yb0.45Er0.09Sc0.12}[Al1.92Sc0.08]Al3O12 and {Y0.96Yb0.45Er0.09Sc1.50}[Al1.8Sc0.2]Al3O12 was carried out. The influence of scandium cations in the dodecahedral and octahedral positions of the garnet crystal lattice on the refractive index of YSAG : Yb : Er, as well as the values of absorption coefficients, integral luminescent intensities, and lifetimes of excited states of Yb3+ (2F7/2 and 2F5/2) and Er3+ (4I15/2, 4I13/2, 4F9/2, and 4S3/2) cations was revealed in the wavelength ranges 520–700 nm and 890–1690 nm. It has been shown that by changing the concentrations of scandium cations in the dodecahedral and octahedral positions of the crystal lattice of YSAG : Yb : Er solid solutions, it is possible to purposefully change the efficiency of energy transfer from ytterbium cations to erbium cations.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139319865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of heat treatment on the structure and mechanical properties of zirconia crystals partially stabilized with samarium oxide 热处理对部分用氧化钐稳定的氧化锆晶体的结构和机械性能的影响

Modern Electronic Materials Pub Date : 2023-10-11 DOI: 10.3897/j.moem.9.3.115614

M. Borik, Alexey Kulebyakin, E. Lomonova, F. Milovich, V. Myzina, P. Ryabochkina, N. V. Sidorova, N. Tabachkova, A. Chislov

{"title":"Effect of heat treatment on the structure and mechanical properties of zirconia crystals partially stabilized with samarium oxide","authors":"M. Borik, Alexey Kulebyakin, E. Lomonova, F. Milovich, V. Myzina, P. Ryabochkina, N. V. Sidorova, N. Tabachkova, A. Chislov","doi":"10.3897/j.moem.9.3.115614","DOIUrl":"https://doi.org/10.3897/j.moem.9.3.115614","url":null,"abstract":"The effect of high-temperature treatment in different media on the phase composition, microhardness and fracture toughness of (ZrO2)1-х(Sm2O3)х crystals with x = 0.02÷0.06 has been studied. The crystals have been grown using direction melt crystallization in a cold skull. The crystals have been heat treated at 1600 °C for 2 h in air and in vacuum. The phase composition of the crystals has been studied using X-ray diffraction and Raman scattering. We show that samarium cations enter the ZrO2 lattice mainly in a trivalent charge state and do not change their charge after air or vacuum annealing. The as-annealed phase composition has changed in all the test crystals except for the (ZrO2)0.94(Sm2O3)0.06 composition. After air or vacuum annealing the (ZrO2)1-x(Sm2O3)x crystals with 0.002 ≤ x ≤ 0.05 contain a monoclinic phase. The (ZrO2)0.94(Sm2O3)0.06 crystals contain two tetragonal phases (t and t´) with different tetragonality degrees. After air or vacuum annealing of the (ZrO2)0.94(Sm2O3)0.06 crystals the lattice parameters of the t and t´ phases change in opposite manners, suggesting that the tetragonality degree of the t phase increases whereas the tetragonality degree of the t´ phase decreases. The microhardness and fracture toughness of the as-annealed crystals depend on the Sm2O3 concentration in the solid solutions. The formation of the monoclinic phase in the (ZrO2)1-х(Sm2O3)х crystals with 0.037 ≤ x ≤ 0.05 significantly reduces the microhardness and fracture toughness of the crystals. Annealing of the (ZrO2)0.94(Sm2O3)0.06 crystals triggers more efficient hardening mechanisms and thus increases the fracture toughness of the crystals. We show that air or vacuum annealing of the (ZrO2)0.94(Sm2O3)0.06 crystals increases the fracture toughness of the crystals by 1.5 times as compared with that of the as-grown crystals.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139320515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Estimation of the activation energy in the Ag/SnSe/Ge2Se3/W self-directed channel memristor 估算 Ag/SnSe/Ge2Se3/W 自定向通道忆阻器中的活化能

Modern Electronic Materials Pub Date : 2023-10-11 DOI: 10.3897/j.moem.9.3.113245

A. N. Aleshin, O. A. Ruban

{"title":"Estimation of the activation energy in the Ag/SnSe/Ge2Se3/W self-directed channel memristor","authors":"A. N. Aleshin, O. A. Ruban","doi":"10.3897/j.moem.9.3.113245","DOIUrl":"https://doi.org/10.3897/j.moem.9.3.113245","url":null,"abstract":"In this study, we conducted an investigation into the Ag/SnSe/Ge2Se3/W ionic memristor, focusing on the determination of activation energies associated with its two primary operational processes: the formation of conductive filaments and memristor degradation. To ascertain the electrical conductivity of the memristor in both its basic electronic states, a low resistance state and a high resistance state, we constructed current-voltage characteristics. The estimation of activation energy values was carried out employing the Arrhenius law and the provisions of irreversible thermodynamics, with specific reference to Onsager's second postulate. This fundamental concept posits that the growth rate of irreversible component of entropy can be expressed as the summation of products involving fluxes and thermodynamic forces when a system tends towards its equilibrium state. In the context of this study, the equilibrium state of the memristor is defined as the condition at which the memristor can no longer function as a resistive memory cell. Our experimentation involved the application of a flux of Ag+ ions (electromigration). The calculated activation energy values were found to be 0.24 eV for the initial process and 1.16 eV for the latter. These divergent activation energy values indicate the differentiation between the agglomerative mechanism that governs the formation of conductive channels, prevalent in the Ag/SnSe/Ge2Se3/W memristor, and the \"conventional\" substance transfer mechanism based on a group of point defects that manifests itself during the memristor's degradation.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139320442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Detection of inhomogeneous magnetic fields using magnetoelectric composites 利用磁电复合材料探测不均匀磁场

Modern Electronic Materials Pub Date : 2023-10-11 DOI: 10.3897/j.moem.9.3.114129

V. V. Kuts, A. Turutin, A. Kislyuk, I. Kubasov, E. E. Maksumova, A. A. Temirov, M. D. Malinkovich, N. A. Sobolev, Yuri N. Parkhomenko

{"title":"Detection of inhomogeneous magnetic fields using magnetoelectric composites","authors":"V. V. Kuts, A. Turutin, A. Kislyuk, I. Kubasov, E. E. Maksumova, A. A. Temirov, M. D. Malinkovich, N. A. Sobolev, Yuri N. Parkhomenko","doi":"10.3897/j.moem.9.3.114129","DOIUrl":"https://doi.org/10.3897/j.moem.9.3.114129","url":null,"abstract":"Magnetoelectric (ME) composites have a wide range of possible applications, especially as room-temperature sensors of weak magnetic fields in magnetocardiography and magnetoencephalography medical diagnostic equipment. In most works on ME composites, structures are tested in uniform magnetic fields; however, for practical application, detailed knowledge of their behaviour in inhomogeneous magnetic fields (IMFs) is necessary. In this work, we measured IMFs with radial symmetry produced by alternate currents (AC) passing through an individual thin wire upon different placements of an ME sensor. An ME self-biased b-LN/Ni/Metglas structure with a sensitivity to the magnetic field of 120 V/T was created for IMF detection. The necessity of an external biasing magnetic field was avoided by the inclusion of a nickel layer having remanent magnetization. The ME composite shows a non-zero ME coefficient of 0.24 V/(cm · Oe) in the absence of an external DC magnetic field. It is shown that the output voltage amplitude from the ME composite, which is located in an AC IMF, is dependent on the relative position of the investigated sample and magnetic field lines. Maximum ME signal is obtained when the long side of the ME sample is perpendicular to the wire, and the symmetry plane which divides the long side into two similar pieces contains the wire axis. In the frequency range from 400 Hz to 1000 Hz in the absence of vibrational and other noises, the detection limit amounts to (2 ± 0.4) nT/Hz1/2.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139320764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of doping on the optical properties of lanthanum-gallium tantalate 掺杂对钽酸镧镓光学特性的影响

Modern Electronic Materials Pub Date : 2023-09-30 DOI: 10.3897/j.moem.9.3.113479

E. V. Zabelina, N. Kozlova, Oleg A. Buzanov

{"title":"Effect of doping on the optical properties of lanthanum-gallium tantalate","authors":"E. V. Zabelina, N. Kozlova, Oleg A. Buzanov","doi":"10.3897/j.moem.9.3.113479","DOIUrl":"https://doi.org/10.3897/j.moem.9.3.113479","url":null,"abstract":"Nominally pure lanthanum-gallium tantalate La3Ga5.5Ta0.5O14 crystals doped with aluminum, silicon and gallium oxide to above stoichiometric content have been grown by the Czochralski technique in iridium crucibles in argon and in agron with addition of oxygen atmospheres. The transmittance spectra of the crystals have been measured on a Cary-5000 UV-Vis-NIR spectrophotometer in the 200–800 nm range. Absorption spectra α(λ) have been plotted on the basis of the experimental data. The absorption spectra of the undoped crystals grown in an oxygen-free atmosphere have one weak absorption band at λ ~ 290 nm. The absorption spectra of the crystals grown in an agron with addition of oxygen have absorption bands at λ ~ 290, 360 and 480 nm. We show that for the crystals grown in an oxygen-free atmosphere, gallium doping to above stoichiometric content reduces the intensity of its only λ ~ 290 nm absorption band. Aluminum doping of the La3Ga5.5Ta0.5O14 crystals grown in an oxygen-free atmosphere significantly reduces the intensity of the λ ~ 290 nm absorption band and increases the intensity of the λ ~ 360 and 480 nm bands. Aluminum doping of the La3Ga5.5Ta0.5O14 crystals grown in an oxygen-containing atmosphere reduces the intensity of the λ ~ 360 and 480 nm bands and increases the intensity of the λ ~ 290 nm absorption band. Silicon doping of these crystals significantly reduces the intensity of the λ ~ 480 nm band and also reduces the intensity of the λ ~ 290 and 360 nm bands.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"233 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139333224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Charge pumping in solar cell structure 太阳能电池结构中的电荷泵

Modern Electronic Materials Pub Date : 2023-09-30 DOI: 10.3897/j.moem.9.3.111530

Vitaliy V. Starkov, E. Gosteva

{"title":"Charge pumping in solar cell structure","authors":"Vitaliy V. Starkov, E. Gosteva","doi":"10.3897/j.moem.9.3.111530","DOIUrl":"https://doi.org/10.3897/j.moem.9.3.111530","url":null,"abstract":"Modern understanding of the material science of semiconductor silicon allowed the authors to propose a new concept of the so-called “charge pumping” in the structures of photovoltaic converters or solar cells. This paper presents theoretical estimates of the rate of separation and collection of light-generated charge carriers in the structures of conventional silicon solar cells and charge-pumped solar cells. Relatively cheaper so-called “solar silicon” of p-type conductivity is typically used in the industrial production of solar cells. This type of silicon is particularly prone to the formation of thermodonor centers. Partial or, at higher temperatures (about 400 °C), even complete overcompensation of the hole type of conductivity in the base region may occur as a result of prolonged heating. This paper presents an original model describing the local formation of n+ regions in the solar cell structure by the so-called “local photon annealing”. These regions were named “charge pumps”. Experimental data on the formation of n+ regions as a result of Li diffusion are reported as an experimental confirmation of the theoretical estimations made in this work. Comparative volt-ampere characteristics of experimental charge-pumped photovoltaic converters and conventional solar cells are presented, showing an up to 30% increase in the short-circuit current Js.c for the experimental structures under standard illumination (AM1.5). The proposed technological aspects of charge-pumped photovoltaic converter fabrication deliver a cheap process and can be implemented in the industrial production of solar cells with little effort.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"40 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139331679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Inorganic Semiconductors in Electronic Applications 无机半导体在电子应用中的应用

Modern Electronic Materials Pub Date : 2023-09-21 DOI: 10.3390/electronicmat4030011

Wojciech Pisula

引用次数: 0

Enhancing Light Harvesting in Dye-Sensitized Solar Cells through Mesoporous Silica Nanoparticle-Mediated Diffuse Scattering Back Reflectors 通过介孔二氧化硅纳米颗粒介导的漫射后反射器增强染料敏化太阳能电池的光收集

Modern Electronic Materials Pub Date : 2023-08-30 DOI: 10.3390/electronicmat4030010

Jeffrie Fina, Navdeep Kaur, Chen-Yu Chang, Cheng-Yu Lai, D. Radu

{"title":"Enhancing Light Harvesting in Dye-Sensitized Solar Cells through Mesoporous Silica Nanoparticle-Mediated Diffuse Scattering Back Reflectors","authors":"Jeffrie Fina, Navdeep Kaur, Chen-Yu Chang, Cheng-Yu Lai, D. Radu","doi":"10.3390/electronicmat4030010","DOIUrl":"https://doi.org/10.3390/electronicmat4030010","url":null,"abstract":"Dye-sensitized solar cells (DSSCs) hold unique promise in solar photovoltaics owing to their low-cost fabrication and high efficiency in ambient conditions. However, to improve their commercial viability, effective, and low-cost methods must be employed to enhance their light harvesting capabilities, and hence photovoltaic (PV) performance. Improving the absorption of incoming light is a critical strategy for maximizing solar cell efficiency while overcoming material limitations. Mesoporous silica nanoparticles (MSNs) were employed herein as a reflective layer on the back of transparent counter electrodes. Chemically synthesized MSNs were applied to DSSCs via bar coating as a facile fabrication step compatible with roll-to-roll manufacturing. The MSNs diffusely scatter the unused incident light transmitted through the DSSCs back into the photoactive layers, increasing the absorption of light by N719 dye molecules. This resulted in a 20% increase in power conversion efficiency (PCE), from 5.57% in a standard cell to 6.68% with the addition of MSNs. The improved performance is attributed to an increase in photon absorption which led to the generation of a higher number of charge carriers, thus increasing the current density in DSSCs. These results were corroborated with electrochemical impedance spectroscopy (EIS), which showed improved charge transport kinetics. The use of MSNs as reflectors proved to be an effective practical method for enhancing the performance of thin film solar cells. Due to silica’s abundance and biocompatibility, MSNs are an attractive material for meeting the low-cost and non-toxic requirements for commercially viable integrated PVs.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"74 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86312246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent progress and development prospects of mobile current sources 移动电流源的最新进展及发展前景

Modern Electronic Materials Pub Date : 2023-07-06 DOI: 10.3897/j.moem.9.2.109923

V. Sleptsov, L. Kozhitov, A. Diteleva, D. Kukushkin, A. Popkova

{"title":"Recent progress and development prospects of mobile current sources","authors":"V. Sleptsov, L. Kozhitov, A. Diteleva, D. Kukushkin, A. Popkova","doi":"10.3897/j.moem.9.2.109923","DOIUrl":"https://doi.org/10.3897/j.moem.9.2.109923","url":null,"abstract":"Physicochemical fundamentals have been developed for the basic design solutions and fabrication technologies of prospective electrolytic power cells with a reusable cell capacity of 350–500 W·h/kg at the first stage and 1000 W·h/kg at the second stage. Along with conventional chemical current sources and ionistors, there are emerging high-performance supercapacitor structures with thin dielectric in the double electric layer and hybrid capacitors in which energy is accumulated in the double electric layer and due to electrochemical processes. This approach reduces the internal resistance of the electrolytic cells thus decreasing the heat emission during operation and therefore providing for a higher specific energy capacity and operation safety, shorter charging time and an increase in specific power. Prospective anode is a nanostructured electrode material in the form of a carbon matrix filled with a nanostructured chemically active material. Promising carbon matrix fillers are Li and its alloys, Si, Al, Na, Sn, Mg, Zn, Ni, Co, Ag, as well as a range of other materials and their compounds. The effect of carbon material specific surface area, dielectric permeability and chemically active material addition on the specific energy capacity has been studied. Theoretical specific energy capacity of metal/air hybrid capacitors has been calculated. Thin-film technological system has been designed for new generation electrode materials in the form of carbon matrices with highly developed surface containing thin tunneling dielectrics and chemically active materials on dielectric surface.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"76 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80478078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electron and hole injection barriers between silicon substrate and RF magnetron sputtered In2O3 : Er films 硅衬底与射频磁控溅射In2O3: Er薄膜之间的电子和空穴注入势垒

Modern Electronic Materials Pub Date : 2023-07-05 DOI: 10.3897/j.moem.9.109980

K. Feklistov, A. Lemzyakov, A. Shklyaev, D. Protasov, A. Deryabin, E. V. Spesivsev, D. Gulyaev, A. Pugachev, D. G. Esaev

{"title":"Electron and hole injection barriers between silicon substrate and RF magnetron sputtered In2O3 : Er films","authors":"K. Feklistov, A. Lemzyakov, A. Shklyaev, D. Protasov, A. Deryabin, E. V. Spesivsev, D. Gulyaev, A. Pugachev, D. G. Esaev","doi":"10.3897/j.moem.9.109980","DOIUrl":"https://doi.org/10.3897/j.moem.9.109980","url":null,"abstract":"In2O3 : Er films have been synthesized on silicon substrates by RF magnetron sputter deposition. The currents through the synthesized metal/oxide/semiconductor (MOS) structures (Si/In2O3 : Er/In-contact) have been measured for n and p type conductivity silicon substrates and described within the model of majority carrier thermoemission through the barrier, with bias voltage correction to the silicon potential drop. The electron and hole injection barriers between the silicon substrate and the film have been found to be 0.14 and 0.3 eV, respectively, by measuring the temperature dependence of the forward current at a low sub-barrier bias. The resulting low hole injection barrier is accounted for by the presence of defect state density spreading from the valence band edge into the In2O3 : Er band gap to form a hole conduction channel. The presence of defect state density in the In2O3 : Er band gap is confirmed by photoluminescence data in the respective energy range 1.55–3.0 eV. The band structure of the Si/In2O3 : Er heterojunction has been analyzed. The energy gap between the In2O3 : Er conduction band electrons and the band gap conduction channel holes has been estimated to be 1.56 eV.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"83 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83252554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0