Synthesis and piezoelectric properties of freestanding ferroelectric films based on barium strontium titanate

Michael S. Afanasiev, Dmitry A. Kiselev, A. Sivov, G. Chucheva
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Abstract

In this work, the membrane structures based on lead-free ferroelectric barium strontium titanate with composition Ba0.8Sr0.2TO3 (BSTO) were fabricated by a magnetron sputtering method. The formation of a single-phase Ba0.8Sr0.2TO3 with thickness of 300 nm sintered on Si substrate is confirmed by XRD analysis. It is shown that films without a silicon substrate exhibit ferroelectric and piezoelectric properties. The piezoelectric and ferroelectric behaviors of BSTO thin film without a silicon substrate were confirmed through a piezoelectric force microscopy and Kelvin probe force microscopy and measurements of the effective piezoelectric coefficients (d33 and d15). Images of the residual potential of polarized areas have been obtained on the membranes, which are stable over time despite the absence of a lower electrode. Additionally, a local of ferroelectric hysteresis loop has been observed. A combination of the structural and piezoelectric measurements reveals that it possible to create freestanding ferroelectric films based on Ba0.8Sr0.2TO3 system, establishing it as a promising candidate for high-performance electromechanical applications.
基于钛酸锶钡的独立铁电薄膜的合成与压电特性
本研究采用磁控溅射法制造了基于无铅铁电钛酸锶钡(成分为 Ba0.8Sr0.2TO3,BSTO)的膜结构。XRD 分析证实,在硅衬底上烧结形成了厚度为 300 纳米的单相 Ba0.8Sr0.2TO3。研究表明,没有硅衬底的薄膜具有铁电和压电特性。通过压电显微镜和开尔文探针力显微镜以及有效压电系数(d33 和 d15)的测量,证实了无硅衬底 BSTO 薄膜的压电和铁电行为。在薄膜上获得了极化区域的残余电位图像,尽管没有下电极,这些残余电位仍能保持稳定。此外,还观察到局部铁电滞后环。结合结构和压电测量结果表明,可以在 Ba0.8Sr0.2TO3 系统的基础上制造出独立的铁电薄膜,使其成为高性能机电应用的理想候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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