Synthesis of silicon-carbon films by induction-assisted plasma-chemical deposition

A. A. Temirov, I. Kubasov, A. Turutin, T. Ilina, A. Kislyuk, Dmitry A. Kiselev, E. A. Skryleva, Nikolai A. Sobolev, I. A. Salimon, Nikolai V. Batrameev, M. D. Malinkovich, Yuri N. Parkhomenko
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Abstract

Silicon-carbon films are of great interest as diamond-like materials combining unique properties, e.g. high hardness, adhesion to a wide range of materials, abrasion resistance, chemical resistance, low friction coefficient and biocompatibility. The presence of silicon in the films significantly reduces their inner mechanical stress as compared to diamond films. Currently, the films are used in industry, primarily, as solid lubricants and protective coatings. There are a large number of silicon-carbon film synthesis methods the most widely used of which are various options of chemical vapor deposition. A new silicon-carbon film synthesis technique has been suggested and tested. The technique is based on the use of high-frequency induction for obtaining plasma of silicon and carbon vapors supplied to the reaction chamber from an external source. Impurity-free silicon-carbon films containing 63–65 % carbon atoms with sp3 orbital hybridization have been synthesized on Sitall substrates. The composition, surface roughness and friction coefficient of the impurity-free silicon-carbon films synthesized using the suggested technology have been studied. The possibility of implementing resistive switching in thin silicon-carbon films in cross-bar structures with metallic electrodes has been analyzed.
通过感应辅助等离子体化学沉积法合成硅碳薄膜
硅碳薄膜作为兼具高硬度、与多种材料的粘附性、耐磨性、耐化学性、低摩擦系数和生物相容性等独特性能的类金刚石材料,引起了人们的极大兴趣。与金刚石薄膜相比,硅在薄膜中的存在大大降低了其内部机械应力。目前,这种薄膜在工业中主要用作固体润滑剂和保护涂层。硅碳薄膜的合成方法有很多,其中使用最广泛的是各种化学气相沉积法。我们提出并测试了一种新的硅碳薄膜合成技术。该技术的基础是利用高频感应来获得从外部供应到反应室的硅和碳蒸汽等离子体。在 Sitall 基底上合成了不含杂质的硅碳薄膜,其中碳原子含量为 63-65%,具有 sp3 轨道杂化。研究了使用建议技术合成的无杂质硅碳薄膜的成分、表面粗糙度和摩擦系数。分析了在带有金属电极的交叉条结构中实现硅碳薄膜电阻开关的可能性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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