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Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)最新文献

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Performance study of an ultrasonic transducer used for wire bonding 用于焊线的超声换能器的性能研究
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1998-08-29 DOI: 10.1109/HKEDM.1998.740211
S. Or, H. Chan, V. Lo, C. W. Yuen
{"title":"Performance study of an ultrasonic transducer used for wire bonding","authors":"S. Or, H. Chan, V. Lo, C. W. Yuen","doi":"10.1109/HKEDM.1998.740211","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740211","url":null,"abstract":"In-situ studies on the performance of an ultrasonic wire-bonding transducer (about 60 kHz) are presented and discussed in this paper in order to optimize the bonding process. The resonant frequencies and vibration mode shapes of the transducer were computed using finite element method (FEM) and were compared with the experimental resonant frequencies and displacement distributions. Good agreements between the computed and experimental results were obtained. The desirable second axial mode was found and proven to be the dominant mode of the transduces that facilitates the bonding process. Characteristics of the transducer under different input power were also studied. Results show that its performance is good and high quality bonds can be formed.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"389 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115217509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Properties and design optimization of photo-diodes available in a current CMOS technology 当前CMOS技术中光电二极管的性能和设计优化
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740180
Weiquan Zhang, M. Chan
{"title":"Properties and design optimization of photo-diodes available in a current CMOS technology","authors":"Weiquan Zhang, M. Chan","doi":"10.1109/HKEDM.1998.740180","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740180","url":null,"abstract":"The properties of various photo-diodes available from a standard CMOS technology have been studied. These include light intensity dependent photo-current, turn-on and turn-off characteristics, diode capacitance, and design optimization for high responsivity. The MOSIS HP 0.8 /spl mu/m CMOS technology has been selected to fabricate the test photo-diodes. Based on the results, the methodology to design optimal photo-diodes for low power CMOS imaging system will be discussed.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124178549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Study of 1/f noise in III-V nitride based MODFETs at low drain bias 低漏极偏压下III-V型氮基modfet的1/f噪声研究
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740193
W. Ho, C. Surya, K. Tong, W. Kim, A. Botcharev, H. Morkoç
{"title":"Study of 1/f noise in III-V nitride based MODFETs at low drain bias","authors":"W. Ho, C. Surya, K. Tong, W. Kim, A. Botcharev, H. Morkoç","doi":"10.1109/HKEDM.1998.740193","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740193","url":null,"abstract":"Flicker noise in MBE grown III-V nitride MODFETs was characterized from room temperature to 130 K. The voltage noise power spectra, S/sub V/(f), were found to be proportional to 1/f/sup /spl gamma// where /spl gamma/ depends on the device temperature as well as the gate bias. A study of S/sub V/(f) as a function of the biasing condition was conducted in detail and was found to vary as V/sub G//sup 2//(V/sub G/-V/sub T/)/sup /spl beta// where /spl beta/ is a function of temperature. Analyses of the data showed that the noise originated from thermal activation of carriers to localized states in the channel area. The experimental data indicated that number fluctuations were not a major factor in the observed noise. However, more work is needed to determine if surface mobility fluctuations played a key role in the 1/f noise.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"298 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114328944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Advances in intermixed quantum well devices 混合量子阱器件的研究进展
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740188
E. Li
{"title":"Advances in intermixed quantum well devices","authors":"E. Li","doi":"10.1109/HKEDM.1998.740188","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740188","url":null,"abstract":"Quantum well composition intermixing is a thermal induced interdiffusion of the constituent atoms through the hetero-interface. The intermixed structures created by both impurity induced and impurity free or vacancy promoted processes have recently attracted high attention. The interdiffusion mechanism is no longer confined to a single phase diffusion for two constituent atoms, but it can now consist of two or multiple phases and/or multiple species, such as three cations interdiffusion and two pairs of cation-anion interdiffusion. A review on the impact of intermixing on device physics is presented with many interesting features. For instance, both compressive or tensile strain materials and both blue or red shifts in the bandgap can be achieved depending on the types of intermixing. The recent advancement in intermixing modified optical properties, such as absorption, refractive index as well as electro-optic effects are discussed. In addition, this paper places a strong emphasis on the device application of the intermixing technology. The advantage of being able to tune the material provides a way to improve the performance of photodetectors and modulators. Attractive distributed-feedback and vertical cavity laser dynamics have been shown due to some unique device physics of the quantum well intermixing. Several state-of-the-art results will be summarized with an emphasis on its future development and directions.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116463899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Interdiffused InGaAs/GaAs strained multiple quantum well infrared photodetector 互扩散InGaAs/GaAs应变多量子阱红外探测器
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740178
A.S.W. Lee, G. Karunasiri
{"title":"Interdiffused InGaAs/GaAs strained multiple quantum well infrared photodetector","authors":"A.S.W. Lee, G. Karunasiri","doi":"10.1109/HKEDM.1998.740178","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740178","url":null,"abstract":"The effect of interdiffusion on strained InGaAs/GaAs quantum well infrared photodetector is investigated. Transverse magnetic and transverse electric infrared intersubband transitions are observed after interdiffusion. The absorption peak wavelength is red shifted from the as grown 10.20 to the interdiffused 10.5 and 11.17 /spl mu/m, for 5 and 10 s annealing at 850/spl deg/C respectively, without appreciable degradation in absorption strength. Responsivity spectra of both 0/spl deg/ and 90/spl deg/ polarization are of compatible amplitude and the shape of the annealed spectra becomes narrower. Dark current of the annealed devices is found to be an order of magnitude larger than the as-grown one at 77 K.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127294558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Anodic-oxide-induced interdiffusion in quantum wells structure 量子阱结构中阳极氧化诱导的互扩散
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740191
Michael C. Y. Chan, E. Li, S. Yuan, H. Tan, C. Jagadish
{"title":"Anodic-oxide-induced interdiffusion in quantum wells structure","authors":"Michael C. Y. Chan, E. Li, S. Yuan, H. Tan, C. Jagadish","doi":"10.1109/HKEDM.1998.740191","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740191","url":null,"abstract":"Enhancement of interdiffusion in GaAs/AlGaAs quantum wells (QWs) due to anodic oxides was studied. Photoluminescence and diffused QW modeling were used to understand the effects of intermixing on the QW structure. The activation energy is similar to those obtained from SiO/sub 2/ cap annealed quantum well structures.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121077495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bandstructure of interdiffused InGaN/GaN quantum well 互扩散InGaN/GaN量子阱的能带结构
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740189
Elaine M. T. Cheung, Michael C. Y. Chan
{"title":"Bandstructure of interdiffused InGaN/GaN quantum well","authors":"Elaine M. T. Cheung, Michael C. Y. Chan","doi":"10.1109/HKEDM.1998.740189","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740189","url":null,"abstract":"Quantum well composition intermixing is a thermal induced interdiffusion of the constituent atoms through the hetero-interface. The intermixed structures created by both impurity induced and impurity-free vacancy promoted processes have recently attracted high attention. In recent years, blue green LEDs and lasers of III-nitride semiconductors have attracted a large amount of interest. This is mainly due to its large bandgap range from 1.89 eV (wurtzite InN) to 3.44 eV (wurtzite GaN). InGaN/GaN single quantum well structures have been used to achieve high lumens blue and green light emitting diodes. In this paper, we present the band structure of a strained InGaN/GaN single quantum well under the influence of interdiffusion. Band structure is a fundamental aspect in determining the electronic and optical properties of the materials such as optical gain, refractive index, absorption, etc.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"280 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116050848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A simple and meaningful expression of heterojunction built-in voltage between p-type SiGe and n-type Si p型SiGe和n型Si之间异质结内置电压的简单而有意义的表达式
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740196
Deyi Kong, Tongli Wei, Y. Li, Weidong Nie, W. Qian
{"title":"A simple and meaningful expression of heterojunction built-in voltage between p-type SiGe and n-type Si","authors":"Deyi Kong, Tongli Wei, Y. Li, Weidong Nie, W. Qian","doi":"10.1109/HKEDM.1998.740196","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740196","url":null,"abstract":"In this work, the heterojunction built-in voltage between n-type Si and strained p-type SiGe is derived from their energy band diagrams, a simple and meaningful quantitative expression is presented. For unstrained SiGe, it reduces to a more simple expression, say, it can be simply determined by the built-in voltage of Si homojunction and the bandgap narrowing of SiGe. The expression is convenient in calculation.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116199552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Wafer-level electromigration reliability test for deep-submicron interconnect metallization 深亚微米互连金属化的晶圆级电迁移可靠性试验
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740210
W. Loh, M. Tse, L. Chan, Keng Foo Eo
{"title":"Wafer-level electromigration reliability test for deep-submicron interconnect metallization","authors":"W. Loh, M. Tse, L. Chan, Keng Foo Eo","doi":"10.1109/HKEDM.1998.740210","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740210","url":null,"abstract":"An automatic Wafer-level Electromigration Test (WET) System with interactive interface was developed. The WET System has the advantages of reduced stressing time and hence cost over the conventional package-level EM test. The automatic EM test with parallel stressing on multiple devices was successfully implemented. Interconnection lines linewidth of 0.32μm and 0.6μm and composite metal films AI-Cu (0.5%) with Ti/TiN top and bottom layer were processed and stressed. The activation energy Ea was found to be 0.76-0.86eV for 0.6pm metal lines over the temperature range from 235°C to 275°C. The values are compatible to those obtained using the package-level EM testing at 150 - 250 °C. For the 0.32pm metal lines, the activation energy El, was in the range of0.91-1.15eV.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122257639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A programmable clock oscillator for integrated sensor applications 用于集成传感器应用的可编程时钟振荡器
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740207
P. Chan, L. Siek, C. Lee, K. Chan
{"title":"A programmable clock oscillator for integrated sensor applications","authors":"P. Chan, L. Siek, C. Lee, K. Chan","doi":"10.1109/HKEDM.1998.740207","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740207","url":null,"abstract":"This gaper presents a programmable two-phase non-overlapping clock oscillator used for integrated sensors with wide operating temperature, low-cost and robust requirements. It is based on a proposed gain-enhanced VI converter to drive two one-shot timers arranged in a ring configuration together with the start-up circuit. Experimental results verify that the clock oscillation frequency varies less than 0.5% from temperature - 40° C to + 125° C in an integrated sensor interface for air-bag accelerometer. For a +/-IO% variation in supply, the frequency shifts +0.45/-0.83%. The measured frequencies of the sample ICs have a mean of 1.6% in deviation from the simulated 256 kHz and a standard derivation of 1.37%. The oscillator circuit occupies 0.26 mm2 using 0.8 pm CMOS technology.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116369656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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