Anodic-oxide-induced interdiffusion in quantum wells structure

Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI:10.1109/HKEDM.1998.740191

Michael C. Y. Chan, E. Li, S. Yuan, H. Tan, C. Jagadish

引用次数: 0

Abstract

Enhancement of interdiffusion in GaAs/AlGaAs quantum wells (QWs) due to anodic oxides was studied. Photoluminescence and diffused QW modeling were used to understand the effects of intermixing on the QW structure. The activation energy is similar to those obtained from SiO/sub 2/ cap annealed quantum well structures.

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量子阱结构中阳极氧化诱导的互扩散

研究了阳极氧化物对GaAs/AlGaAs量子阱中相互扩散的增强作用。利用光致发光和扩散量子阱模型来了解混合对量子阱结构的影响。其活化能与SiO/ sub2 / cap退火量子阱结构的活化能相近。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)

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