Properties and design optimization of photo-diodes available in a current CMOS technology

Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI:10.1109/HKEDM.1998.740180

Weiquan Zhang, M. Chan

引用次数: 7

Abstract

The properties of various photo-diodes available from a standard CMOS technology have been studied. These include light intensity dependent photo-current, turn-on and turn-off characteristics, diode capacitance, and design optimization for high responsivity. The MOSIS HP 0.8 /spl mu/m CMOS technology has been selected to fabricate the test photo-diodes. Based on the results, the methodology to design optimal photo-diodes for low power CMOS imaging system will be discussed.

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当前CMOS技术中光电二极管的性能和设计优化

从一个标准的CMOS技术已经研究了各种光电二极管的性质。这些包括光强相关的光电流、通断特性、二极管电容和高响应性的设计优化。我们选择MOSIS HP 0.8 /spl mu/m CMOS技术来制作测试用的光电二极管。在此基础上，讨论了低功耗CMOS成像系统中光电二极管的优化设计方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)

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