{"title":"当前CMOS技术中光电二极管的性能和设计优化","authors":"Weiquan Zhang, M. Chan","doi":"10.1109/HKEDM.1998.740180","DOIUrl":null,"url":null,"abstract":"The properties of various photo-diodes available from a standard CMOS technology have been studied. These include light intensity dependent photo-current, turn-on and turn-off characteristics, diode capacitance, and design optimization for high responsivity. The MOSIS HP 0.8 /spl mu/m CMOS technology has been selected to fabricate the test photo-diodes. Based on the results, the methodology to design optimal photo-diodes for low power CMOS imaging system will be discussed.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Properties and design optimization of photo-diodes available in a current CMOS technology\",\"authors\":\"Weiquan Zhang, M. Chan\",\"doi\":\"10.1109/HKEDM.1998.740180\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The properties of various photo-diodes available from a standard CMOS technology have been studied. These include light intensity dependent photo-current, turn-on and turn-off characteristics, diode capacitance, and design optimization for high responsivity. The MOSIS HP 0.8 /spl mu/m CMOS technology has been selected to fabricate the test photo-diodes. Based on the results, the methodology to design optimal photo-diodes for low power CMOS imaging system will be discussed.\",\"PeriodicalId\":183235,\"journal\":{\"name\":\"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1998.740180\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1998.740180","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
摘要
从一个标准的CMOS技术已经研究了各种光电二极管的性质。这些包括光强相关的光电流、通断特性、二极管电容和高响应性的设计优化。我们选择MOSIS HP 0.8 /spl mu/m CMOS技术来制作测试用的光电二极管。在此基础上，讨论了低功耗CMOS成像系统中光电二极管的优化设计方法。
Properties and design optimization of photo-diodes available in a current CMOS technology
The properties of various photo-diodes available from a standard CMOS technology have been studied. These include light intensity dependent photo-current, turn-on and turn-off characteristics, diode capacitance, and design optimization for high responsivity. The MOSIS HP 0.8 /spl mu/m CMOS technology has been selected to fabricate the test photo-diodes. Based on the results, the methodology to design optimal photo-diodes for low power CMOS imaging system will be discussed.
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