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Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)最新文献

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The effect of nitrogen incorporation into the gate oxide by using shallow implantation of nitrogen and drive-in process 研究了采用浅注入氮和注入法对栅极氧化物掺氮效果的影响
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740182
L. Ko, Byungsu Cho, Y. Nga, L. Chan
{"title":"The effect of nitrogen incorporation into the gate oxide by using shallow implantation of nitrogen and drive-in process","authors":"L. Ko, Byungsu Cho, Y. Nga, L. Chan","doi":"10.1109/HKEDM.1998.740182","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740182","url":null,"abstract":"The effect of nitrogen incorporation into the gate oxide by using shallow implantation of nitrogen, followed by drive-in annealing has been investigated. It is found that nitrogen distributed in the polysilicon and polysilicon/SiO/sub 2/ can retard the diffusivity of boron in the polysilicon, and hence suppress the boron from reaching the bulk oxide and improve the charge to breakdown (Q/sub BD/). However, too much incorporation of nitrogen during implantation or drive-in process might degrade the Q/sub BD/, which is probably related to the nitrogen which is doubly bonded to Si atoms in the bulk oxide, with the remaining bond being a hydrogen or dangling bond. It is also found that furnace annealing and rapid thermal annealing (RTA) give different drive-in effect on as-implanted nitrogen, and therefore the gate oxide integrity.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125993907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication and characterization of porous polycrystalline silicon resistive sensor 多孔多晶硅电阻式传感器的制备与表征
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740209
P. Han, H. Wong, M. Poon
{"title":"Fabrication and characterization of porous polycrystalline silicon resistive sensor","authors":"P. Han, H. Wong, M. Poon","doi":"10.1109/HKEDM.1998.740209","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740209","url":null,"abstract":"A thin layer of p-type anodized porous polycrystalline silicon (PPS) are formed on n-type epitaxial crystal silicon wafer. The sensitivity of the resistors based on this PPS has been characterized and analyzed at different ambient pressures and temperature as well as gas species. Results show that the current-voltage characteristics are highly sensitive to the ambient pressure and organic gases. In addition, the effects of illumination and temperature are also studied.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128425783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of strained InGaAs/GaAs multi-quantum-well waveguide defined by ion implantation 离子注入定义的应变InGaAs/GaAs多量子阱波导分析
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740181
A.T.H. Li
{"title":"Analysis of strained InGaAs/GaAs multi-quantum-well waveguide defined by ion implantation","authors":"A.T.H. Li","doi":"10.1109/HKEDM.1998.740181","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740181","url":null,"abstract":"The modal properties of a strained InGaAs/GaAs Multi-Quantum Well waveguide have been analysed. The In/Ga interdiffusion rate enhanced by ion implantation have been computed with several implant energies and dosages. The waveguide propagation constant is calculated by an improved Fourier decomposition method for different annealing times.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128771026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of multi-finger AlGaAs/GaAs HBTs with non-uniform spacing 非均匀间距多指AlGaAs/GaAs HBTs的设计
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740192
Yang-Hua Chang, Yueh-Cheng Lee, C. Liu
{"title":"Design of multi-finger AlGaAs/GaAs HBTs with non-uniform spacing","authors":"Yang-Hua Chang, Yueh-Cheng Lee, C. Liu","doi":"10.1109/HKEDM.1998.740192","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740192","url":null,"abstract":"A non-uniform spacing structure in multi-finger heterojunction bipolar transistors is presented to improve thermal stability. Device peak temperature is lowered, and a higher current handling capability can be realized. The design procedures to optimize the spacing are described.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115580880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The parallel simulation software design method on hydrodynamic model 水动力模型的并行仿真软件设计方法
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740205
Lianfeng Yang, Jin Wu, Nasirjan, Tongli Wei, Yun Wang, Junqing Xie, Min Cai
{"title":"The parallel simulation software design method on hydrodynamic model","authors":"Lianfeng Yang, Jin Wu, Nasirjan, Tongli Wei, Yun Wang, Junqing Xie, Min Cai","doi":"10.1109/HKEDM.1998.740205","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740205","url":null,"abstract":"This paper mainly discusses the object oriented (OO) design of the hydrodynamic model (HDM), and a new device parallel simulation approach based on the CORBA platform which accepts the state-of-the-art CORBA technology. The OO technology is dominant in the primary software system design and the CORBA technology is a development and application of OO in the network. These two technologies make it possible to solve the complex problem with quantities calculations with a high speed and low cost.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134290906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of low-frequency noise in barium titanate ceramic resistors 钛酸钡陶瓷电阻器低频噪声建模
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740186
H. Wong, P. Han, M. Poon
{"title":"Modeling of low-frequency noise in barium titanate ceramic resistors","authors":"H. Wong, P. Han, M. Poon","doi":"10.1109/HKEDM.1998.740186","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740186","url":null,"abstract":"Low-frequency (LF) noise measurements, at room temperature and above the Curie point, were conducted in barium titanate ceramic resistors. Experiments show that the LF noise behaviors are governed by grain boundary tunneling at room temperature and by trapping and detrapping of the grain boundary states at temperatures above the Curie point and their physical models are developed, These observations provide additional information on the current conduction and the distribution of grain boundary states in these materials.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114818178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical characteristics of MIS capacitors with BST thin films deposited on n-Si(100) by the sol-gel method 用溶胶-凝胶法在n-Si(100)表面沉积BST薄膜的MIS电容器的电特性
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740187
C. Law, K. Tong, K. L. Wong, J. Li, Kun Li
{"title":"Electrical characteristics of MIS capacitors with BST thin films deposited on n-Si(100) by the sol-gel method","authors":"C. Law, K. Tong, K. L. Wong, J. Li, Kun Li","doi":"10.1109/HKEDM.1998.740187","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740187","url":null,"abstract":"The application of high dielectric Sr/sub 0.20/Ba/sub 0.8/TiO/sub 3/ (BST) thin films for Metal-Insulator-Semiconductor (MIS) capacitors was investigated. BST thin films were deposited on n-Si(100) substrates by the sol-gel method. We examined the characteristics of the MIS capacitor at 30/spl deg/C and 120/spl deg/C. The hysteresis loop was determined by high frequency (1 MHz) capacitance-voltage (C-V) measurement. Also, current-voltage (I-V) characteristics of the MIS capacitor were investigated. The BST MIS structure showed a relatively high dielectric constant in the insulator. It was found that the small signal capacitance of the MIS capacitors was affected by the ferroelectric properties of the BST films. The I-V measurement revealed that the BST films obey Frenkel-Poole emission conduction process under high electric field.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115123941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modeling of electromigration-induced resistance change in aluminum thin films 铝薄膜电迁移诱导电阻变化的建模
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740203
V. Lo
{"title":"Modeling of electromigration-induced resistance change in aluminum thin films","authors":"V. Lo","doi":"10.1109/HKEDM.1998.740203","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740203","url":null,"abstract":"The simulation of electromigration-induced resistance change in unpassivated pure aluminum films has been performed. It is suggested that the aggregation of the supersaturated vacancies forms voids. The latter develops into a continuous crack, which causes the resistance increase of the conductor. The simulated result is compared with experimental resistometric measurement.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"198 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131958530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spreading-Resistance Temperature Sensor on SOI SOI上的扩展电阻温度传感器
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740208
P. Lai, Bin Li, C. Chan
{"title":"Spreading-Resistance Temperature Sensor on SOI","authors":"P. Lai, Bin Li, C. Chan","doi":"10.1109/HKEDM.1998.740208","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740208","url":null,"abstract":"A Spreading-Resistance Temperature (SRT) sensor is fabricated on silicon-on-insulator (SOI) wafer and achieves characteristics comparable with similar SRT sensor on silicon wafer. This sensor structure can be potentially used in integrated sensors operating at temperatures up to 350 °C.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127966595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Influences of processing technique on electrical characteristics of TVS used in communication systems 处理技术对通信系统中TVS电特性的影响
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740199
X.R. Zheng, B. Liu, Bin Li, P. Lai
{"title":"Influences of processing technique on electrical characteristics of TVS used in communication systems","authors":"X.R. Zheng, B. Liu, Bin Li, P. Lai","doi":"10.1109/HKEDM.1998.740199","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740199","url":null,"abstract":"An improved technique is proposed in fabricating a semiconductor surge protection device which is used in high-speed wideband information transmission systems. In order to increase the surge handling capability of the device, a double p-type diffusion is used. Specifically, in the diffusion step of gallium, SiO/sub 2/ is used as a mask to obtain a very small base width and to avoid the reduction of carrier lifetime. It is found that this is a very useful way to reduce the on-state voltage drop and therefore the energy dissipation of the device.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126930069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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