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Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)最新文献

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Effect of non-uniform distribution of electric field on diffused quantum well lasers 电场不均匀分布对扩散量子阱激光器的影响
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740177
W. Man, S. Yu
{"title":"Effect of non-uniform distribution of electric field on diffused quantum well lasers","authors":"W. Man, S. Yu","doi":"10.1109/HKEDM.1998.740177","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740177","url":null,"abstract":"The influence of non-uniform distribution of electric field on the steady state and dynamic behavior of diffused quantum well lasers is studied by a self-consistent model. The energy band structure of the quantum well can be distorted significantly by the non-uniform distribution of electric field, especially for devices with diffused quantum well structure. Hence, the evaluation on the optical gain as well as the modulation responses of diffused quantum well lasers using flat band approximation can be deviated significantly with nonuniform distribution of electric field taken into consideration.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124663549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phase formation and field emission properties of SiC/Si heterostructures formed by MEVVA implantation MEVVA注入SiC/Si异质结构的相形成和场发射特性
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740195
S. Wong, Dihu Chen, R. Kwok
{"title":"Phase formation and field emission properties of SiC/Si heterostructures formed by MEVVA implantation","authors":"S. Wong, Dihu Chen, R. Kwok","doi":"10.1109/HKEDM.1998.740195","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740195","url":null,"abstract":"High dose carbon implantation into Si with a MEVVA ion source was performed to form SiC/Si heterostructures. By deconvoluting the FTIR spectra into gaussian components corresponding to amorphous SiC and crystalline SiC phases, the implant energy, dose and annealing temperature dependence of phase formation properties of SiC in these structures were studied. It was found that there are critical energies and critical doses at which there are abrupt increases in the fraction of the crystalline SiC phase formed. This was discussed in terms of the ion beam induced crystallization effect. Results of electron field emission measurements showed that a remarkably low turn-on field of about IV//spl mu/m could be achieved from these planar SiC/Si structures prepared with appropriate implant and annealing conditions.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125597167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling for the subthreshold current in SOI short channel gate controlled hybrid transistor SOI短沟道栅控混合晶体管亚阈值电流的建模
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740201
Ru Huang, Yangyuan Wang, R. Han
{"title":"Modeling for the subthreshold current in SOI short channel gate controlled hybrid transistor","authors":"Ru Huang, Yangyuan Wang, R. Han","doi":"10.1109/HKEDM.1998.740201","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740201","url":null,"abstract":"A subthreshold current model for the SOI short channel gate controlled hybrid transistor (GCHT) is presented in this paper for the first time, considering the mobile charge affected by the gate voltage and the base voltage simultaneously. The influence of the channel length and the drain voltage on the performance of GCHT is investigated. The model predictions agree well with numerical results and experimental data.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122195733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electronic industry in the 21st century: opportunities and challenges for China 21世纪的电子工业:中国的机遇与挑战
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740381
P. K. Ko
{"title":"Electronic industry in the 21st century: opportunities and challenges for China","authors":"P. K. Ko","doi":"10.1109/HKEDM.1998.740381","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740381","url":null,"abstract":"Summary form only given. The global electronic industry has undergone tremendous changes in the past twenty years. This is especially true for the \"computer\" side. On the technology front, hardware and software performance and diversity are improving rapidly. This, together with fast dropping prices, has enabled continued expansion of the application spectrum. On the business front, specialization and globalization have gradually replaced vertical integration and localization. As usual, in this time of rapid changes, new leaders have emerged. Relative to the \"computer\" side, the \"consumer electronics\" side of the industry has been rather static. Japan, and to a lesser extent, Europe, have dominated the scene as core technology creators, product definers, and market leaders. Although we (Hong Kong and the Chinese Mainland's electronics industry) are built up a very significant manufacturing base, product entries, with a few exceptions, are mainly at the lower end, with the technology level, profit margin, and sales volume controlled by the leaders. As the digital world of the \"computer\" side encroaches on the \"consumer\" side, and many owners of core technologies are small companies, the global consumer electronics industry will undergo rapid changes in the coming decades. The only question is: who will be the winners (or new winners)? I believe we can be-with proper understanding, planning, investment, and implementation. In this talk, I'll describe and analyze some fundamental and intriguing changes in the technology and business models of the \"computer\" side of the industry, and how these changes will impact the \"consumer electronics\" side. I'll then outline possible approaches and plans that could take advantage of these changes and propel our industry to the leadership level amidst formidable challenges.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114526497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new approach to study the channel charge partition of MOS transistors during non-quasi-static (NQS) turn-on 一种研究MOS晶体管非准静态(NQS)导通过程中通道电荷分配的新方法
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740202
Wai-kit Lee, M. Chan
{"title":"A new approach to study the channel charge partition of MOS transistors during non-quasi-static (NQS) turn-on","authors":"Wai-kit Lee, M. Chan","doi":"10.1109/HKEDM.1998.740202","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740202","url":null,"abstract":"A new approach is used to study the channel charge partition of MOS transistors during Non-Quasi-Static (NQS) turn-on. A 2-D device simulator is used to separate the DC and transient NQS source/drain current. The transient channel charge partition ratio can then be deduced from the corresponding terminal currents. While the 40/60 charge partition ratio in saturation region has been widely accepted, it is found to be closer to 0/100 during NQS turn-on. Also the charge partition ratio has a strong dependent on the ramp rate of the input signal.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116819727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling of field dependent resistivity of BaTiO/sub 3/ positive temperature coefficient resistors BaTiO/sub 3/正温度系数电阻器的场相关电阻率建模
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740185
H. Wong, P. Han, M. Poon, Y.Y. Chen, X.R. Zheng
{"title":"Modeling of field dependent resistivity of BaTiO/sub 3/ positive temperature coefficient resistors","authors":"H. Wong, P. Han, M. Poon, Y.Y. Chen, X.R. Zheng","doi":"10.1109/HKEDM.1998.740185","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740185","url":null,"abstract":"An abnormal field dependence of resistivity is observed in BaTiO/sub 3/ positive temperature coefficient resistors (PTCRs) with a small averaged grain size. With this connection, a grain boundary tunneling model for the current conduction is proposed. This new model agrees with the both the measured electric field and temperature dependencies. It suggests that grain boundary tunneling of carrier is as important as the double Schottky barrier in the current conduction in small grain size BaTiO/sub 3/ PTCRs.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124716631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A comparison between NO-annealed O/sub 2/- and N/sub 2/O-grown gate dielectrics no退火O/sub 2/-和N/sub 2/O生长栅电介质的比较
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740183
P. T. Lai, J. Xu, Yung Cheng
{"title":"A comparison between NO-annealed O/sub 2/- and N/sub 2/O-grown gate dielectrics","authors":"P. T. Lai, J. Xu, Yung Cheng","doi":"10.1109/HKEDM.1998.740183","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740183","url":null,"abstract":"Qualities of oxynitrides prepared by annealing O/sub 2/- and N/sub 2/O-grown oxides in NO ambient are investigated. Harder oxide/Si interface, less charge trapping and higher charge-to-breakdown characteristics are observed in NO-annealed N/sub 2/O-grown (N2ONO) oxynitride than NO-annealed O/sub 2/-grown (O2NO) oxynitride. The involved mechanism lies in higher interfacial nitrogen concentration and total nitrogen content in N2ONO oxynitride than O2NO oxynitride for the same anneal temperature and time.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124009753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of textured-surface light emitting diode 纹理表面发光二极管的优化设计
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740176
E. H. Li, Chun-Chung Chan, Paul C. K. Kwok
{"title":"Optimization of textured-surface light emitting diode","authors":"E. H. Li, Chun-Chung Chan, Paul C. K. Kwok","doi":"10.1109/HKEDM.1998.740176","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740176","url":null,"abstract":"We present an analysis of the efficiency and radiation pattern of the textured-surface LED by tracing the light rays that emits from the active layer. Through simulation, we discover that the efficiency depends on the thickness of the textured layer and its separation distance from the active layer. By carefully choosing these two parameters, maximum efficiency an be achieved. The radiation pattern of a texture-surface LED is found to be different from the flat-surfaced LED in that the textured surface has a wider angular spread.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"385 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123353839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Thermal stability of nickel silicides in different silicon substrates 硅化镍在不同硅衬底中的热稳定性
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740198
S.C.H. Ho, M. Poon, M. Chan, H. Wong
{"title":"Thermal stability of nickel silicides in different silicon substrates","authors":"S.C.H. Ho, M. Poon, M. Chan, H. Wong","doi":"10.1109/HKEDM.1998.740198","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740198","url":null,"abstract":"Thermal stability of nickel monosilicide (NiSi) on single crystalline silicon (c-Si), poly-crystalline silicon (poly-Si) and amorphous silicon (a-Si) has been investigated. NiSi is stable and can show low resistivity on c-Si and poly-Si up to around 700/spl deg/C forming gas anneal (FGA), but is quite unstable on a-Si substrate even after corresponding annealing at only 400/spl deg/C. However, NiSi pure gate formed on poly-Si and a-Si films are both found to be quite stable with temperature up to 1000/spl deg/C FGA and on 1000 /spl Aring/ gate oxide.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129696723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Study of flicker noise in III-V nitride based heterojunctions due to hot-electron stressing 热电子应力对III-V型氮化物异质结闪烁噪声的影响
Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) Pub Date : 1900-01-01 DOI: 10.1109/HKEDM.1998.740194
W. Y. Ho, C. Surya
{"title":"Study of flicker noise in III-V nitride based heterojunctions due to hot-electron stressing","authors":"W. Y. Ho, C. Surya","doi":"10.1109/HKEDM.1998.740194","DOIUrl":"https://doi.org/10.1109/HKEDM.1998.740194","url":null,"abstract":"We report detailed characterizations of the effects of hot-electron stressing on low-frequency excess noise in commercial III-V nitride based heterojunction light-emitting diodes. The devices were stressed by applying a dc current ranging from 100 mA to 200 mA. Degradations in the device properties was investigated through detailed studies of the I-V characteristics, electroluminescence and flicker noise over a wide range of temperatures and biases. Our experimental data demonstrated significant distortions in the I-V characteristics. The room temperature electroluminescence of the devices exhibited 25% decrement in the peak emission intensity. In particular, the voltage noise power spectral density increased by nearly three orders of magnitude. The temperature dependencies of the noise power spectra indicate that the noise arises from the thermal activation of carriers to localized states in the heterostructures, Our experiment shows that 1/f noise can be utilized as a sensitive tool for characterizing hot-electron degradation effects in III-V nitride heterojunctions.","PeriodicalId":183235,"journal":{"name":"Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130990877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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