Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005.最新文献_第4页

Improving die attach adhesion on metal leadframes via episulfide chemistry 通过外硫化物化学提高金属引线上的模具附着力

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432049

Yayun Liu, Ruzhi Zhang, Yimin Zhang, A. Xiao, O. Musa, P. Tan, Renyi Wang

{"title":"Improving die attach adhesion on metal leadframes via episulfide chemistry","authors":"Yayun Liu, Ruzhi Zhang, Yimin Zhang, A. Xiao, O. Musa, P. Tan, Renyi Wang","doi":"10.1109/ISAPM.2005.1432049","DOIUrl":"https://doi.org/10.1109/ISAPM.2005.1432049","url":null,"abstract":"The objective of this study is to develop a basic understanding and practical approaches to achieve universal adhesion in metal leadframe packages. Universal die attach refers to a single die attach material that has excellent adhesion properties to Cu, Ag and Ni-Pd-Au substrates. Universal adhesion is a key element in achieving \"universal die attach\", which means that one single die attach can be applied onto different substrates (Cu, Ag and Ni-Pd-Au), all of which are commonly used in metal leadframe packages in semiconductor industry. The most difficult part of achieving universal adhesion is to achieve a good adhesion on Ag and Ni-Pd-Au by conventional adhesion promoters. In this study, a series of episulfide materials were synthesized, where episulfide moieties can be utilized as a latent thiol generator and can be cured in a similar way as epoxides. The adhesion properties of these materials were investigated through formulation testing, dynamic curing studies, surface analysis and fundamental characterization. We found episulfide indeed functioned as an adhesion promoter and improved cohesiveness of die attach adhesive on Ag and Ni-Pd-Au leadframes. The interactions between episulfide and the host resin system, and the stronger interfacial adhesion to metal leadframe by episulfide have contributed to these improvements.","PeriodicalId":181674,"journal":{"name":"Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005.","volume":"60 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114005054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Characterizing optically packaged MEMS & MOEMS devices using optical profiling techniques 使用光学轮廓技术表征光学封装MEMS和MOEMS器件

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432037

Sen Han, T. Browne

引用次数: 2

Constitutive modeling of lead-free solders 无铅焊料的本构建模

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432043

M. Pei, J. Qu

引用次数: 73

Environmentally benign materials for electronics: a review of current developments and emerging technologies 无害环境的电子材料:对当前发展和新兴技术的回顾

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432064

J. Lincoln, O. Ogunseitan, J. Saphores, J. Schoenung, H. Nixon, A. Shapiro

引用次数: 14

New nano-particle material (NPM) for micro- and opto-electronic packaging applications 用于微电子和光电封装的新型纳米颗粒材料(NPM)

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432085

E. Suhir

引用次数: 10

Synthesis of Ag-Cu alloy nanoparticles for lead-free interconnect materials 无铅互连材料用银铜合金纳米颗粒的合成

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432072

Hongjin Jiang, K. Moon, C. Wong

引用次数: 38

Material impact on FBGA package reliability 材料对FBGA封装可靠性的影响

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432061

W. Koh, F. Kong

引用次数: 3

Dielectric polymers embedded with high-k coated conducting particles: effective dielectric properties modeling 嵌入高k包覆导电粒子的介电聚合物:有效介电特性建模

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432081

H. T. Vo, F. Shi

引用次数: 1

The effect of intermetallic bonding on blocking electromigration induced interfacial diffusion in Cu dual damascene interconnects 金属间键对铜双砷互连中电迁移界面扩散的影响

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432067

M. Yan, J. Suh, K. Tu, A. V. Vairagar, S. Mhaisalkar, A. Krishnamoorthy

{"title":"The effect of intermetallic bonding on blocking electromigration induced interfacial diffusion in Cu dual damascene interconnects","authors":"M. Yan, J. Suh, K. Tu, A. V. Vairagar, S. Mhaisalkar, A. Krishnamoorthy","doi":"10.1109/ISAPM.2005.1432067","DOIUrl":"https://doi.org/10.1109/ISAPM.2005.1432067","url":null,"abstract":"In submicron dual damascene Cu interconnects, electromigration occurs mainly along Cu/SiN cap interface by void migration mechanism. In this study, immersion Sn surface treatment was employed after CMP and before SiN deposition. All the samples, with a line-width of 0.28 /spl mu/m, were assessed by package level electromigration tests at 300/spl deg/C under a current density of 3.6 /spl times/ 10/sup 6/ A/cm/sup 2/. We found that Sn surface treatment effectively introduces the Cu-Sn bonding to the Cu/dielectric interface and has influenced electromigration along the Cu/dielectric interfaces. Failure analysis shows that the samples with immersion Sn process have a median-time-to-failure almost 1 order of magnitude larger than the standard dual damascene samples. A careful characterization utilizing FIB and SEM cross-sectional images shows that the failure mechanism has changed due to immersion Sn surface treatment. After electromigration-induced void nucleation, its movement is blocked by the strong Cu-Sn bonding so that its growth is localized and occurs along grain boundaries. With the increased impedance to surface diffusion, failure analysis seems to indicate that grain boundary diffusion now participates in the void movement and growth, which is proposed to be the reason for the increased lifetime.","PeriodicalId":181674,"journal":{"name":"Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129382782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Volume effect on the soldering reaction between SnAgCu solders and Ni 体积效应对SnAgCu钎料与Ni之间焊接反应的影响

Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Pub Date : 2005-03-16 DOI: 10.1109/ISAPM.2005.1432042

C.E. Ho, Y. Lin, S.C. Yang, C. Kao

{"title":"Volume effect on the soldering reaction between SnAgCu solders and Ni","authors":"C.E. Ho, Y. Lin, S.C. Yang, C. Kao","doi":"10.1109/ISAPM.2005.1432042","DOIUrl":"https://doi.org/10.1109/ISAPM.2005.1432042","url":null,"abstract":"The diameters of the solder joints in the array-array packages can range from 760 /spl mu/m (BGA joints) to 75 /spl mu/am (flip-chip joints). This variation in diameter in fact translates into a 1,000 times difference in volume. Such a large difference in volume produces a pronounced solder volume effect. In this study, the volume effect on the liquid-solid reactions between the Sn3AgxCu (x = 0.4, 0.5, or 0.6 wt.%) solders and Ni was investigated. Three different sizes of solder spheres (760 /spl mu/m, 500 /spl mu/m, and 300 /spl mu/m) were soldered on 400 /spl mu/m diameter electrolytic Ni soldering pads for 90 sec-20 min at a peak reflow temperature of 235/spl deg/C. Two reaction products (Cu,Ni)/sub 6/Sn/sub 5/ and (Ni,Cu)/sub 3/Sn/sub 4/ were present at the interface in all the samples. Interestingly, a massive spalling of (Cu,Ni)/sub 6/Sn/sub 5/ from the interface occurred, especially in samples with smaller solder balls and lower Cu concentration. We attributed the massive spalling of (Cu,Ni)/sub 6/Sn/sub 5/ to the decrease in the amount of available Cu in the solders as the amount of solder as well as the Cu concentration decreased. The results of this study suggested that a high Cu-content SnAgCu solder should be used to prevent this massive spalling.","PeriodicalId":181674,"journal":{"name":"Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131441384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 26