July 16最新文献_第3页

Photoconductivity of Flash Evaporated CuInSe2 Thin Films 闪蒸CuInSe2薄膜的光电导率

July 16 Pub Date : 1984-07-16 DOI: 10.1002/PSSA.2210840165

S. Any, R. Bacewicz, J. Filipcwicz, R. Trykozko

引用次数: 11

The Annealing Effect on the Conduction Mechanism of Copper Ferrite 退火对铁氧体铜导电机理的影响

July 16 Pub Date : 1984-07-16 DOI: 10.1002/PSSA.2210840142

A. A. Ghani, S. Mazen, A. Ashour

引用次数: 9

The Influence of Deep Levels on Photoemomry Effect in Structures with a Potential Barrier 深能级对具有势垒结构的光记忆效应的影响

July 16 Pub Date : 1984-07-16 DOI: 10.1002/PSSA.2210840136

O. Borkovskaya, N. Dmitruk, V. Litovchenko, O. I. Maeva

{"title":"The Influence of Deep Levels on Photoemomry Effect in Structures with a Potential Barrier","authors":"O. Borkovskaya, N. Dmitruk, V. Litovchenko, O. I. Maeva","doi":"10.1002/PSSA.2210840136","DOIUrl":"https://doi.org/10.1002/PSSA.2210840136","url":null,"abstract":"The residual dimensional photoconductivity in semiconductors with surface depletion layers and deep levels in the space charge region (SCR) are investigated. In this case the residual surface photoconductivity is caused by photoionization of the surface electron states (SS) and deep levels in the SCR, when the thermal transitions between SS and permitted bands of semiconductor can be neglected. The final expressions for the steady-state value of the dimensional photoconductivity and kinetics of its relaxation at the moment immediately after the light is switched on are compared with the experimental results on epitaxial n-GaAs(Fe)–i-GaAs(Cr) structures. The spectral dependence of the photoionization cross-section for the deep level of iron in GaAs is obtained. The effect of a giant increase of the near-edge photoionization cross-section associated with phototransitions between donor-acceptor pairs is detected. \u0000 \u0000 \u0000 \u0000Die ausgedehnte Restphotoleitfahigkeit in Halbleitern mit Oberflachenverarmungsschichten und tiefen Niveaus in der Raumladungszone (SCR) wird untersucht. In diesem Fall wird die Oberflachenrestphotoleitung durch Photoionisation der Oberflachenelektronenzustande (SS) und tiefen Niveaus in der SCR verursacht, wenn die thermischen Ubergange zwischen SS und den erlaubten Bandern des Halbleiters vernachlassigt werden konnen. Die endgultigen Ausdrucke fur den stationaren Wert der ausgedehnten Photoleitfahigkeit und ihrer Relaxationskinetik zum Zeitpunkt unmittelbar nach Einschalten des Lichtes werden mit den experimentellen Ergebnissen an epitaktischen n-GaAs(Fe)–i-GaAs(Cr)-Strukturen verglichen. Die spektrale Abhangigkeit des Photoionisationswirkungsquerschnittes fur die tiefen Eisenniveaus in GaAs wird erhalten. Der Effekt eines Riesenanstiegs der Photoionisationswirkungsquerschnitte an der Bandkante verbunden mit Photoubergangen zwischen Donator-Akzeptor-Paaren wird nachgewiesen.","PeriodicalId":17793,"journal":{"name":"July 16","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1984-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87471971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Measurement of Electrical Potential Distribution in a Polymer near the Contact to a Metal by Means of Scanning Electron Microscopy 用扫描电子显微镜测量靠近金属接触的聚合物中的电位分布

July 16 Pub Date : 1984-07-16 DOI: 10.1002/PSSA.2210840140

W. Possart, A. Röudeb

{"title":"Measurement of Electrical Potential Distribution in a Polymer near the Contact to a Metal by Means of Scanning Electron Microscopy","authors":"W. Possart, A. Röudeb","doi":"10.1002/PSSA.2210840140","DOIUrl":"https://doi.org/10.1002/PSSA.2210840140","url":null,"abstract":"The results establish the existence of an electric double layer at a polyethylene-aluminum contact. The potential contrast scanning electron microscopy requires sample cutting and caution in handling the electron beam of the microscope. Nevertheless, the presented method allows to investigate the electrical potential distribution in insulators mar the contact to metals without rupture of the composite. In further investigations, the quality of information can be improved by avoiding the evaporated carbon layer and extending the exploitation of lateral resolution for measuring the sample potential as a function of locus. In both cases, that demands enlarged variability of primary voltage of the microscope. \u0000 \u0000 \u0000 \u0000Die vorgestellten Resultate beweisen die Existenz einer elektrischen Doppelschicht an einem Polyethylen-Aluminium Kontakt. Die dazu benutzte Potentialkontrast-Rasterelektronenmikroskopie verlangt das Sehneiden der Proben und Vorsicht im Umgang mit dem Primarstrahl des Mikroskopes. Ungeachtet dessen gestattet es die vorgestellte Methode, die clektrische Potentialverteilung in Isolatoren nahe ihres Kontaktes zu einem Metall zu untersuchen, ohne den Verbund zu zerstoren. In weiterfuhrenden Untersuchungen kann die Qualitat der Aussage erhoht werden, indem man die Kohleaufdampfschicht vermeidet und die laterale Auflosung der Potentialmessung besser ausnutzt durch verbesserte Variabilitat der Primarstrahlspannung des Mikroskopes.","PeriodicalId":17793,"journal":{"name":"July 16","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1984-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76346858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 18

Effect of Scandium Ions on Magnetic Properties of Dysprosium Orthoferrite 钪离子对正铁氧体镝磁性能的影响

July 16 Pub Date : 1984-07-16 DOI: 10.1002/PSSA.2210840159

A. Ges, V. M. Derkachenko, V. Fedotova

引用次数: 1

The Influence of Alkali Atoms Implanted in Silicon on the Negative Secondary Ion Emission 注入硅中的碱原子对负二次离子发射的影响

July 16 Pub Date : 1984-07-16 DOI: 10.1002/PSSA.2210840134

W. Frentrup, M. Griepertrog, H. Klose, G. Kreysch, U. Müller‐Jahreis

引用次数: 2

A Mechanism for Drag on Dislocations in Zinc 锌中拖拽位错的机理研究

July 16 Pub Date : 1984-07-16 DOI: 10.1002/PSSA.2210840152

R. Basu

引用次数: 1

High Resolution Electron Microscopic Investigations of Dislocations in Deformed GaAs Single Crystals Doped with Te 掺Te的变形GaAs单晶位错的高分辨电镜研究

July 16 Pub Date : 1984-07-16 DOI: 10.1002/PSSA.2210840110

S. K. Maksimov, M. Ziegler, I. Khodos, I. I. Snighiryova, M. Shikhsaidov

{"title":"High Resolution Electron Microscopic Investigations of Dislocations in Deformed GaAs Single Crystals Doped with Te","authors":"S. K. Maksimov, M. Ziegler, I. Khodos, I. I. Snighiryova, M. Shikhsaidov","doi":"10.1002/PSSA.2210840110","DOIUrl":"https://doi.org/10.1002/PSSA.2210840110","url":null,"abstract":"The defect structure of GaAs single crystals doped with tellurium to about 1019 cm−3 and deformed at 500 °C is investigated in the high-resolution electron microscope using three-beam dark-field lattice images along 〈110〉. The images of precipitates at different stages of their formation as well as of dissociated 60° dislocations, dipoles, and stacking fault tetrahedra are taken and analyzed. The succession of the precipitation stages in the tellurium-bearing phase is analyzed, too. There are discrepancies between the periodicity on direct lattice images and the interplanar distances in highly deformed regions in the crystal. \u0000 \u0000 \u0000 \u0000Die Defektstruktur von tellurdotierten (bis 1019 cm−3) GaAs-Einkristallen, die hei 500 ° C deformiert werden, wird im hochauflosenden Elektronenmikroskop mittels Dreistrahl-Dunkelfeld-Gitterabbildung in Richtung 〈110〉 untersucht. Abbildunpen von Prazipitaten in verschiedenen Zustanden ihrer Bildung sowie dissoziierte 60 ° Versetzungen, Dipole und Stapelfehlertetraeder werden gewonnen und analysiert. Die Abfolge der Prazipitationszustande in der tellurlialtigen Phase wird ebenfalls untersucht. Es existieren Widerspriiche zwischen der Periodizitat der direkten Gitterabbildungen und den Zwischenebenensbstanden in hochdeformierten Bereichen des Kristalls.","PeriodicalId":17793,"journal":{"name":"July 16","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1984-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78951140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Specific Features of Piezogalvanomagnetic Effects in Oxygen-Containing Silicon Crystals in the Presence of Thermal Donors-I and -II 热给体- i和-II存在下含氧硅晶体中压电磁效应的特殊特征

July 16 Pub Date : 1984-07-16 DOI: 10.1002/PSSA.2210840133

V. Babich, N. P. Baran, V. Borblik, Yu. P. Dotsenko, V. Kovalchuk, V. A. Shershel

{"title":"Specific Features of Piezogalvanomagnetic Effects in Oxygen-Containing Silicon Crystals in the Presence of Thermal Donors-I and -II","authors":"V. Babich, N. P. Baran, V. Borblik, Yu. P. Dotsenko, V. Kovalchuk, V. A. Shershel","doi":"10.1002/PSSA.2210840133","DOIUrl":"https://doi.org/10.1002/PSSA.2210840133","url":null,"abstract":"Quantitative changes of the thermal ionization energy of thermal donor levels depending on the mechanical stress magnitude in a sample are determined both for thermal donors-I (heat treatment 450 °C) and for thermal donors-II (heat treatment 650 °C) by means of piezogalvanomagnetic effects in oxygen-containing p-Si crystals recompensated by thermal donors into the n-type. Different nature of ionization energy changes is established for levels ϵ1 ≈ 0.064 and ϵ2 ≈ 0.14 eV in the double-charged thermal donors-I. All the experimental data indicate that the dependence of the thermal donor level position on the pressure is affected also by the nature of the centre. \u0000 \u0000 \u0000 \u0000Quantitative Anderungen der thermischen Ionisierungsenergie von Thermodonatorenniveaus, die von der mechanischen Spannungsgrose in der Probe abhangen, werden sowohl fur Thermodonatoren-I (Temperung 450 °C) als auch fur Thermodonatoren-II (Temperung 650 °C) mittels piezogalvanomagnetischer Effekte in sauerstoffhaltigen p-Si-Kristallen, die durch Thermodonatoren in den n-Typ rekompensiert werden, bestimmt. Eine unterschiedliche Art der Ionisierungsenergieanderungen wird fur die Niveaus ϵ1 ≈ 0,064 und ϵ2 ≈ 0,14 eV der doppeltgeladenen Thermodonatoren-I festgestellt. Alle experimentellen Werte zeigen, das die Druckabhangigkeit der Lage der Niveaus der Thermodonatoren auch von der Art des Zentrums beeinflust wird.","PeriodicalId":17793,"journal":{"name":"July 16","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1984-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79007662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Computer Simulation and Analytical Solutions in the Study of the Transient Radiation-Induced Conductivity in Polymers 聚合物瞬态辐射导电性研究的计算机模拟与解析解

July 16 Pub Date : 1984-07-16 DOI: 10.1002/PSSA.2210840141

G. S. Mingaleev, A. Tyutnev, V. Arkhipov, A. Rudenko, A. V. Vannikov, V. Saenko

{"title":"Computer Simulation and Analytical Solutions in the Study of the Transient Radiation-Induced Conductivity in Polymers","authors":"G. S. Mingaleev, A. Tyutnev, V. Arkhipov, A. Rudenko, A. V. Vannikov, V. Saenko","doi":"10.1002/PSSA.2210840141","DOIUrl":"https://doi.org/10.1002/PSSA.2210840141","url":null,"abstract":"Various aspects of the kinetics of the radiation-induced conductivity in polymers, i.e. build-up and decay curves, non-linear dose rate effects, approach to the steady state are investigated by means of approximate analytical solutions as well as computer simulation for the case of exponential trap distribution (computer calculations are performed specifically for the case of dispersion parameter α = 0.5). The widest possible range of irradiation conditions is covered (pulse length 1 ns, 100 μs, 10 ps, 0.1 ms including the steady state; dose per pulse from zero to 105 Gy). The problem of the best choice of normalization parameters is also briefly discussed. \u0000 \u0000 \u0000 \u0000Verschiedene Aspekte der Kinetik der strahlungsinduzierten Leitfahigkeit in Polymeren, d. h. die An-und Abklingkurven, nichtlineare Dosisrateneffekte, das Erreichen des stationaren Zustands, werden sowohl mittels analytischer Naherungslosungen als auch mit Computersimulation fur den Fall einer exponentiellen Haftstellenverteilung untersucht (die Computerberechnungen speziell fur einen Dispersionsparameter α = 0,5). Der weitestmogliche Bereich von Strahlungsbedingungen wird uberdeckt (Impulslange 1 ns, 100 ns, 10 ps, 0,1 ms einschlieslich des stationaren Zustands; Dosis pro Impuls reicht von Null bis 105 Gy). Das Problem der besten Wahl der Normierungs-parameter wird kurz diskutiert.","PeriodicalId":17793,"journal":{"name":"July 16","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1984-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81985019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5