S. K. Maksimov, M. Ziegler, I. Khodos, I. I. Snighiryova, M. Shikhsaidov
{"title":"High Resolution Electron Microscopic Investigations of Dislocations in Deformed GaAs Single Crystals Doped with Te","authors":"S. K. Maksimov, M. Ziegler, I. Khodos, I. I. Snighiryova, M. Shikhsaidov","doi":"10.1002/PSSA.2210840110","DOIUrl":null,"url":null,"abstract":"The defect structure of GaAs single crystals doped with tellurium to about 1019 cm−3 and deformed at 500 °C is investigated in the high-resolution electron microscope using three-beam dark-field lattice images along 〈110〉. The images of precipitates at different stages of their formation as well as of dissociated 60° dislocations, dipoles, and stacking fault tetrahedra are taken and analyzed. The succession of the precipitation stages in the tellurium-bearing phase is analyzed, too. There are discrepancies between the periodicity on direct lattice images and the interplanar distances in highly deformed regions in the crystal. \n \n \n \nDie Defektstruktur von tellurdotierten (bis 1019 cm−3) GaAs-Einkristallen, die hei 500 ° C deformiert werden, wird im hochauflosenden Elektronenmikroskop mittels Dreistrahl-Dunkelfeld-Gitterabbildung in Richtung 〈110〉 untersucht. Abbildunpen von Prazipitaten in verschiedenen Zustanden ihrer Bildung sowie dissoziierte 60 ° Versetzungen, Dipole und Stapelfehlertetraeder werden gewonnen und analysiert. Die Abfolge der Prazipitationszustande in der tellurlialtigen Phase wird ebenfalls untersucht. Es existieren Widerspriiche zwischen der Periodizitat der direkten Gitterabbildungen und den Zwischenebenensbstanden in hochdeformierten Bereichen des Kristalls.","PeriodicalId":17793,"journal":{"name":"July 16","volume":"9 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"1984-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"July 16","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/PSSA.2210840110","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
The defect structure of GaAs single crystals doped with tellurium to about 1019 cm−3 and deformed at 500 °C is investigated in the high-resolution electron microscope using three-beam dark-field lattice images along 〈110〉. The images of precipitates at different stages of their formation as well as of dissociated 60° dislocations, dipoles, and stacking fault tetrahedra are taken and analyzed. The succession of the precipitation stages in the tellurium-bearing phase is analyzed, too. There are discrepancies between the periodicity on direct lattice images and the interplanar distances in highly deformed regions in the crystal.
Die Defektstruktur von tellurdotierten (bis 1019 cm−3) GaAs-Einkristallen, die hei 500 ° C deformiert werden, wird im hochauflosenden Elektronenmikroskop mittels Dreistrahl-Dunkelfeld-Gitterabbildung in Richtung 〈110〉 untersucht. Abbildunpen von Prazipitaten in verschiedenen Zustanden ihrer Bildung sowie dissoziierte 60 ° Versetzungen, Dipole und Stapelfehlertetraeder werden gewonnen und analysiert. Die Abfolge der Prazipitationszustande in der tellurlialtigen Phase wird ebenfalls untersucht. Es existieren Widerspriiche zwischen der Periodizitat der direkten Gitterabbildungen und den Zwischenebenensbstanden in hochdeformierten Bereichen des Kristalls.