Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena最新文献

Tunable and scalable fabrication of plasmonic dimer arrays with sub-10 nm nanogaps by area-selective atomic layer deposition 区域选择性原子层沉积制备亚10nm纳米间隙等离子体二聚体阵列

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-08-30 DOI: 10.1116/6.0001205

Chengwu Zhang, Tuo Gao, Donal Sheets, J. Hancock, J. Tresback, B. Willis

{"title":"Tunable and scalable fabrication of plasmonic dimer arrays with sub-10 nm nanogaps by area-selective atomic layer deposition","authors":"Chengwu Zhang, Tuo Gao, Donal Sheets, J. Hancock, J. Tresback, B. Willis","doi":"10.1116/6.0001205","DOIUrl":"https://doi.org/10.1116/6.0001205","url":null,"abstract":"Nanogaps in metallic nanostructures produce local field enhancements with potential applications in surface enhanced spectroscopy, solar energy conversion, and photocatalysis. Atomic layer deposition is applied as a conformal coating to modify nanogap sizes and tune the optical properties of plasmonic dimer arrays with sub-10 nm nanogaps. Nanostructures are fabricated using layers of gold and palladium to combine features of plasmonics and area-selective atomic layer deposition, where copper metal is deposited on palladium-covered surfaces. Direct measurements of optical extinction for successive smaller nanogaps and thicker copper coatings show that spectral features become broadened at first due to heating-induced shape changes but subsequently sharpen as copper coatings form on palladium structures. Furthermore, longitudinal resonances of plasmonic dimers blue shift for thin coatings due to heating and decreasing aspect ratio, but thicker coatings lead to red shifts due to narrowing nanogaps. Together, these results show that area-selective atomic layer deposition is a promising tool for achieving large area arrays of plasmonic dimers with sub-10 nm nanogaps.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72742308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Characterization and optimization of bonding and interconnect technology for 3D stacking thin dies 三维叠层薄模具的键合与互连技术表征与优化

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-08-25 DOI: 10.1116/6.0001160

Pavani Vamsi Krishna Nittala, Karthika Haridas, Shivam Nigam, Saba Tasneem, P. Sen

{"title":"Characterization and optimization of bonding and interconnect technology for 3D stacking thin dies","authors":"Pavani Vamsi Krishna Nittala, Karthika Haridas, Shivam Nigam, Saba Tasneem, P. Sen","doi":"10.1116/6.0001160","DOIUrl":"https://doi.org/10.1116/6.0001160","url":null,"abstract":"This paper presents the process flow optimizations for the 3D stacking of thin silicon dies. This process is developed for the postfabrication 3D integration technique, which can be used by 3D packaging and heterogenous or hybrid integration fabs. Bonding of the thin silicon layers is optimized by reducing the epoxy thickness. Further, a detailed of set experiments were used to characterize the stress in the thin silicon films. Finally, a hybrid process flow is demonstrated for achieving finer interconnect linewidths of 10 μm. The 3D stacking approach is based on the bonding of thin dies followed by SU-8 planarization. Vias are opened in the planarization layer using lithography. The interconnection methodology fills the SU-8 polymer vias with inkjet-printed silver. Printing the interconnect lines using the standard inkjet printer limits the linewidth to ∼100 μm. To address this, a hybrid process is developed to scale the interconnect line widths. Along with interconnects in the multilayer stack, we demonstrate a minimum line width and spacing of 10 μm and a via diameter of 10 μm.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74944209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Ultradeep microaxicons in lithium niobate by focused Xe ion beam milling 聚焦Xe离子束铣削铌酸锂的超深微轴

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-08-24 DOI: 10.1116/6.0001232

S. Gorelick, A. Marco

{"title":"Ultradeep microaxicons in lithium niobate by focused Xe ion beam milling","authors":"S. Gorelick, A. Marco","doi":"10.1116/6.0001232","DOIUrl":"https://doi.org/10.1116/6.0001232","url":null,"abstract":"Refractive axicons are conically shaped optical devices that are capable of generating nondiffracting Bessel-like beams over extended depths-of-focus (DOFs). In addition to the substantially longer DOF compared to those produced by parabolic focusing lenses, the axicons can generate beams with better resolution for the same form-factor of the optical element, e.g., its diameter and sag height. These properties make the axicons useful in numerous applications in imaging, particle trapping, and many others. Miniaturized refractive axicons or microaxicons are challenging to realize in hard substrates due to the lack of sufficiently precise and rapid fabrication technologies. Here, we report on the rapid fabrication of ultradeep microaxicons in lithium niobate using high-current focused Xe ion beam milling. Microaxicons with 230- μm diameter with ultradeep sag heights between 21 and 48 μm were milled using 200 nA of beam current. Furthermore, the microaxicons were milled in single-crystal lithium niobate—a material with a high refractive index of >2.2 but which inertness makes it a challenging material in microfabrication. The performance of the lenses was characterized by mapping the transmitted intensity at different positions. The measured spot sizes of the produced beams are in excellent agreement with the theoretical expectations and range from 750 down to 250 nm ( ∼λ/2) beam spot size for the shallowest and the deepest microaxicons in this study, respectively. The corresponding DOFs are from 500 down to ∼50 μm for the ultradeep microaxicon. The results verify the applicability of high-current milling with a focused Xe ion beam for the fabrication of high-performance optical elements.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-08-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81145647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Self-powered ultraviolet photodiode based on lateral polarity structure GaN films 基于横向极性结构GaN薄膜的自供电紫外光电二极管

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-08-20 DOI: 10.1116/6.0001196

S. Mukhopadhyay, Hridibrata Pal, Sameer Narang, Chenyu Guo, Jichun Ye, Wei Guo, B. Sarkar

引用次数: 5

Electrical conductivity across the alumina support layer following carbon nanotube growth 碳纳米管生长后氧化铝支撑层的电导率

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-08-19 DOI: 10.1116/6.0001115

B. Dodson, Guohai Chen, Robert C. Davis, R. Vanfleet

引用次数: 0

Electrical and ion beam analyses of yttrium and yttrium-titanium getter thin films oxidation 钇和钇钛吸气剂薄膜氧化的电子束和离子束分析

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-08-18 DOI: 10.1116/6.0001084

C. Bessouet, S. Lemettre, Charlotte Kutyla, A. Bosseboeuf, P. Coste, T. Sauvage, H. Lecoq, Olivier Wendling, A. Bellamy, Piyush Jagtap, S. Escoubas, C. Guichet, O. Thomas, J. Moulin

{"title":"Electrical and ion beam analyses of yttrium and yttrium-titanium getter thin films oxidation","authors":"C. Bessouet, S. Lemettre, Charlotte Kutyla, A. Bosseboeuf, P. Coste, T. Sauvage, H. Lecoq, Olivier Wendling, A. Bellamy, Piyush Jagtap, S. Escoubas, C. Guichet, O. Thomas, J. Moulin","doi":"10.1116/6.0001084","DOIUrl":"https://doi.org/10.1116/6.0001084","url":null,"abstract":"Yttrium, titanium, and yttrium-titanium getter thin films were elaborated on silicon by coevaporation in ultrahigh vacuum. Y-Ti films exhibit nanometric crystallites size (18–35 nm) leading to a very high grain boundary density, which is a favorable microstructure for activation at low temperature. The yttrium content in Y-Ti alloys influences grain size, resistance against room temperature oxidation, and gettering performance for oxygen. Y-Ti films with an yttrium content higher than 30% show strong oxygen sorption during annealing at low temperature (<300 °C). After 1 h of annealing at 250 °C, it was estimated that the yttrium-based getter films can trap between 0.2 and 0.5 μmol of oxygen per cm2, while no oxygen sorption was detected for a single metal titanium film. This makes Y-Ti getter alloys attractive candidates for the packaging of MEMS under vacuum with a low bonding temperature.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79478072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Depth-resolved cathodoluminescence and surface photovoltage spectroscopies of gallium vacancies in β-Ga2O3 with neutron irradiation and forming gas anneals 中子辐照和形成气体退火下β-Ga2O3中镓空位的深度分辨阴极发光和表面光电压光谱

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-08-13 DOI: 10.1116/6.0001240

Hantian Gao, S. Muralidharan, R. Karim, Lei R. Cao, K. Leedy, Hongping Zhao, S. Rajan, D. Look, L. Brillson

{"title":"Depth-resolved cathodoluminescence and surface photovoltage spectroscopies of gallium vacancies in β-Ga2O3 with neutron irradiation and forming gas anneals","authors":"Hantian Gao, S. Muralidharan, R. Karim, Lei R. Cao, K. Leedy, Hongping Zhao, S. Rajan, D. Look, L. Brillson","doi":"10.1116/6.0001240","DOIUrl":"https://doi.org/10.1116/6.0001240","url":null,"abstract":"The gallium vacancy is one of the dominant native point defects in β-Ga2O3, one that, together with its complexes, can have a major effect on free carrier densities and transport in this wide bandgap semiconductor. We used a combination of depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to identify the optical and energy-level properties of these defects as well as how their defect densities and spatial distributions vary with neutron irradiation and temperature-dependent-forming gas anneals. These studies reveal optical signatures that align closely with theoretical energy-level predictions. Likewise, our optical techniques reveal variations in these defect densities that are consistent with hydrogen passivation of gallium vacancies as a function of temperature and depth from the free Ga2O3 surface. These techniques can help guide the understanding and control of dominant native point defects in Ga2O3.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88000210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Multideck light-induced reset in a transparent bilayer synaptic device 透明双层突触装置的多层光诱导复位

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-08-10 DOI: 10.1116/6.0001186

D. Berco, D. Ang

{"title":"Multideck light-induced reset in a transparent bilayer synaptic device","authors":"D. Berco, D. Ang","doi":"10.1116/6.0001186","DOIUrl":"https://doi.org/10.1116/6.0001186","url":null,"abstract":"The research of photoelectric memristors has been gaining momentum in recent years. Although resistive memory synaptic devices are usually electrically controlled, an opto-electronic one would certainly be advantageous. A light-responsive structure can extend the functionality of such devices and allow for coupling of light and electrical signals in the implementation of neuromorphic systems. This paper presents a detailed analysis of a transparent, bilayer synaptic device, capable of hybrid photonic and electronic response with multideck, erase functionality. Such steplike operation may allow for more degrees of freedom in the implementation of artificial vision systems based on these incremental conductance changes. Multilevel operation is demonstrated under different illumination intensities and functional methodologies (i.e., irradiation schemes). Statistical data are also presented to give a better foundation for this suggested functionality. Finally, the underlying physical mechanisms are discussed, supported by ultrahigh-vacuum conductive atomic force microscope measurements over a dedicated lateral test structure.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88921369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Modeling the initial monolayer formation in thermally localized surface deposition 模拟热局部表面沉积中初始单层的形成

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-08-06 DOI: 10.1116/6.0001098

Bart de Braaf, C. Rops, C. Storm

{"title":"Modeling the initial monolayer formation in thermally localized surface deposition","authors":"Bart de Braaf, C. Rops, C. Storm","doi":"10.1116/6.0001098","DOIUrl":"https://doi.org/10.1116/6.0001098","url":null,"abstract":"In atomic layer deposition (ALD), thin layers of materials are deposited on a substrate with atomic layer precision in the vertical direction. The ability to control layer growth in the lateral direction as well is expected to greatly increase the potential of ALD as a path to the bottom-up additive fabrication of electronic devices like solar panels and organic light-emitting diode displays. We explore the possibility of controlling the lateral growth by modifying the temperature profile on the substrate using, for instance, pulsed lasers. This maskless technique keeps the majority of the substrate at a low temperature suppressing one of the chemical half-reactions, while in a small, localized area, the substrate is heated, which allows the reaction to proceed at a higher rate. We test this idea with course-grained computational models that model the control of the temperature by various illumination protocols and simulate the nucleation and growth of the initial monolayer within this inhomogeneous temperature distribution. Our results suggest that the location and the extent of deposition can, in principle, be localized and controlled and address operational regimes in which a thin conducting line may be obtained.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74871417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Sb2Se3 solar cells fabricated via close-space sublimation 近空间升华法制备Sb2Se3太阳能电池

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-08-06 DOI: 10.1116/6.0001034

Runming Tao, Tingting Tan, Hua Zhang, Meng Qingdai, G. Zha

{"title":"Sb2Se3 solar cells fabricated via close-space sublimation","authors":"Runming Tao, Tingting Tan, Hua Zhang, Meng Qingdai, G. Zha","doi":"10.1116/6.0001034","DOIUrl":"https://doi.org/10.1116/6.0001034","url":null,"abstract":"Antimony selenide (Sb2Se3) is regarded as an excellent photovoltaic absorber material due to its suitable bandgap, large light absorption coefficient, abundant raw material reserves, and environmental friendliness. However, the commonly used rapid thermal evaporation strategy for deposition of Sb2Se3 films results in low film quality, which is undesirable from the perspective of photovoltaic performance. Herein, we fabricate highly efficient and stable Sb2Se3 solar cells via a close-space sublimation (CSS) process, which allows separate control of the source and substrate temperatures, leading to high-quality thin films and better solar cell performance. Four growth patterns of Sb2Se3 thin films are optimized by controlling the source temperature of CSS. It is found that the Sb2Se3 thin film prepared at 475 °C has the best crystallinity, smoothest surface, and best density. Moreover, solar cells based on ZnO/Sb2Se3 thin films can achieve maximum efficiency with VOC of 0.312 V, JSC of 27.91 mA/cm2, fill fact of 41.35%, and power conversion efficiency of 3.61%. The performance of the devices was not adversely affected by the air environment, and thus, they were shown to exhibit appropriate stability.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85298695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3