Multideck light-induced reset in a transparent bilayer synaptic device

The research of photoelectric memristors has been gaining momentum in recent years. Although resistive memory synaptic devices are usually electrically controlled, an opto-electronic one would certainly be advantageous. A light-responsive structure can extend the functionality of such devices and allow for coupling of light and electrical signals in the implementation of neuromorphic systems. This paper presents a detailed analysis of a transparent, bilayer synaptic device, capable of hybrid photonic and electronic response with multideck, erase functionality. Such steplike operation may allow for more degrees of freedom in the implementation of artificial vision systems based on these incremental conductance changes. Multilevel operation is demonstrated under different illumination intensities and functional methodologies (i.e., irradiation schemes). Statistical data are also presented to give a better foundation for this suggested functionality. Finally, the underlying physical mechanisms are discussed, supported by ultrahigh-vacuum conductive atomic force microscope measurements over a dedicated lateral test structure.