Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena最新文献_第2页

Interferometric in-situ III/V semiconductor dry-etch depth-control with ±0.8 nm best accuracy using a quadruple-Vernier-scale measurement 干涉原位III/V半导体干蚀刻深度控制±0.8 nm的最佳精度使用四倍游标尺度测量

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-08-06 DOI: 10.1116/6.0001209

G. Sombrio, Emerson Oliveira, J. Strassner, Christoph Doering, H. Fouckhardt

引用次数: 3

Highly selective GaAs/AlGaAs dry etching using HBr/SF6/He 采用HBr/SF6/He进行高选择性GaAs/AlGaAs干蚀刻

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-08-04 DOI: 10.1116/6.0001181

Michael Barrow, Shawn Wright, Sarah Puzycki, P. Shah, R. Bedford, Yuanchang Zhang, J. Phillips

引用次数: 0

Hydrogen etching of the SiC(0001) surface at moderate temperature 在中等温度下对SiC(0001)表面进行氢蚀刻

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-07-30 DOI: 10.1116/6.0001147

Toshiya Hamasaki, K. Yagyu, H. Mitani, T. Nishida, H. Tochihara, Takayuki Suzuki

引用次数: 1

Long term field emission current stability characterization of planar field emitter devices 平面场发射器件的长期场发射电流稳定性表征

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-07-29 DOI: 10.1116/6.0001182

R. Bhattacharya, M. Turchetti, P. Keathley, K. Berggren, J. Browning

引用次数: 5

Ultraviolet light stimulated water desorption effect on emission performance of gated field emitter array 紫外光激发解吸对门控场发射阵列发射性能的影响

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-05-10 DOI: 10.1116/6.0001036

R. Bhattacharya, N. Karaulac, G. Rughoobur, W. Chern, Akintunade Ibitayo Akinwande, J. Browning

{"title":"Ultraviolet light stimulated water desorption effect on emission performance of gated field emitter array","authors":"R. Bhattacharya, N. Karaulac, G. Rughoobur, W. Chern, Akintunade Ibitayo Akinwande, J. Browning","doi":"10.1116/6.0001036","DOIUrl":"https://doi.org/10.1116/6.0001036","url":null,"abstract":"The performance of silicon gated field emission arrays (GFEAs) was characterized before and after ultraviolet (UV) light exposure. Emission and gate leakage currents were measured on 1000 × 1000 tip arrays by sweeping the gate voltage to 40 V DC with a fixed DC collector voltage of 100 V DC. UV light exposure was used to desorb water molecules from the GFEA surfaces. It was found that, before UV exposure, the gate current was 6 mA at 40 V, whereas after 70 min of UV exposure, the gate current decreased to 0.46 mA, indicating a more than ten times reduction in leakage current between the gate and the emitter. Similarly, the observed collector current was 94 μA at 40 V before exposure, and after UV exposure, the collector current increased to 1.33 mA, indicating an improvement of more than 14 times. During the experiments with UV light, residual gas analyzer measurements showed that the partial pressure for water increased by greater than ten times after 60 min of exposure and then decreased by 1 order of magnitude after 100 min of exposure. The emission and leakage current changes remained even after turning off the UV lamps for several tens of minutes; however, upon the exposure to the atmosphere for a few days, those changes reversed. The enhancement could again be observed after additional UV exposure indicating that the adsorbates (mainly water along with others) on the surface affected the leakage between gate and emitter and field emission. Based on analysis of the IV characteristics before and after UV exposure, the work function of the emitter surfaces increases while the portion of the array tips that emits expands resulting in a decrease in the calculated array tip sharpness as duller tips now emit.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83558173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Suppression of resist pattern collapse by crosslinker in ultraviolet nanoimprinting involving sequential infiltration synthesis with trimethylaluminum 三甲基铝序贯渗透合成紫外纳米印迹中交联剂对抗蚀剂图案塌陷的抑制

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-05-10 DOI: 10.1116/6.0001014

C. Miyajima, Shunya Ito, M. Nakagawa

{"title":"Suppression of resist pattern collapse by crosslinker in ultraviolet nanoimprinting involving sequential infiltration synthesis with trimethylaluminum","authors":"C. Miyajima, Shunya Ito, M. Nakagawa","doi":"10.1116/6.0001014","DOIUrl":"https://doi.org/10.1116/6.0001014","url":null,"abstract":"The fabrication of resist patterns using UV nanoimprinting is required on consideration of the reduction of the use of hydrocarbons along recent amendments for environmental sustainability. In this study, we investigated the generation of resist pattern defects through UV nanoimprinting in a readily condensable trans-1,3,3,3-tetrafluoropropene (TFP) gas with a low global warming potential for elimination of nonfill defects arising from a bubble trap and subsequent sequential infiltration synthesis (SIS) to result in a vapor phase organic-inorganic hybridization for dry etching durability. A bisphenol A-based UV-curable imprint resin enabled the nanostructure fabrication of resist patterns without any nonfill defects in TFP; however, SIS consisting of subsequent mutual doses of trimethylaluminum and water caused a resist pattern collapse of 100-nm-height patterns with linewidths of <60 nm. A crosslinker with six acrylate moieties was selected based on its low TFP absorption. The crosslinker-containing imprint resin decreased the resist pattern collapse during SIS. Nanoindentation measurements suggest that the resist patterns made using the crosslinker-containing imprint resin were strengthened at 100 °C to carry out an SIS.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83084189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Organotrialkoxysilane-mediated synthesis of Ni–Pd nanocatalysts at lower concentrations of noble metal: Catalysts for faster hydrogen evolution kinetics 低浓度贵金属下有机三烷氧基硅烷介导镍钯纳米催化剂的合成:加速析氢动力学的催化剂

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-05-05 DOI: 10.1116/6.0000881

P. Pandey, Shubhangi Shukla, R. Narayan

{"title":"Organotrialkoxysilane-mediated synthesis of Ni–Pd nanocatalysts at lower concentrations of noble metal: Catalysts for faster hydrogen evolution kinetics","authors":"P. Pandey, Shubhangi Shukla, R. Narayan","doi":"10.1116/6.0000881","DOIUrl":"https://doi.org/10.1116/6.0000881","url":null,"abstract":"The fabrication of alkoxysilane-based nickel (Ni)–palladium (Pd) bimetallic nanoparticle catalysts with several compositions (Pd—0.001M and Ni—0.001–0.1M) was attempted for the first time; these materials were investigated for use as low-cost catalysts in the hydrogen evolution reaction (HER). Functional alkoxysilane [2-(3,4 epoxycyclohexyl)ethyltrimethoxysilane]-assisted conversion of Pd2+ to Pd0 was demonstrated. Palladium nanocrystallites with an average dimension 4.03 ± 1.29 nm were synthesized, which acted as seeds in the synthesis of Ni–Pd bimetallic nanoparticles. The effect of the nanoparticle catalysts on the HER in an alkaline environment was studied using linear sweep voltammetry and electrochemical impedance spectroscopy. A nanostructured thin film containing Ni3PdNPs produced a 100 mA cm−2 current density at an overpotential of −90 mV with a small Tafel slope of 25 mV dec−1 at a catalyst loading of 0.1 mg cm−2. The annealed Ni3PdNPs catalyst further enhanced the current density to ∼ 240 mA cm−2 at an overpotential of −56 mV.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81769848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Estimation of critical dimension and line edge roughness using a neural network 用神经网络估计临界尺寸和线边缘粗糙度

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-05-04 DOI: 10.1116/6.0000806

Dehua Li, Soo-Young Lee, Jin Choi, Seom-Beom Kim, Chan-uk Jeon

{"title":"Estimation of critical dimension and line edge roughness using a neural network","authors":"Dehua Li, Soo-Young Lee, Jin Choi, Seom-Beom Kim, Chan-uk Jeon","doi":"10.1116/6.0000806","DOIUrl":"https://doi.org/10.1116/6.0000806","url":null,"abstract":"While electron-beam (e-beam) lithography is widely employed in the pattern transfer, the proximity effect makes features blurred, and the stochastic nature of the exposure and development processes causes the roughness in the feature boundaries. In an effort to reduce the proximity effect and line edge roughness (LER), it is often necessary to estimate the critical dimension (CD) and LER. In our previous study, the e-beam lithographic process was modeled using the information extracted from SEM images for the estimation of CD and LER. This modeling involves several parameters to be determined and tends to require a long computation time. In this study, the possibility of improving the accuracy of the CD and LER estimation using a neural network (NN) is investigated. In the NN-based estimation, the explicit modeling of the e-beam lithographic process can be avoided. This paper describes the method of estimating the CD and LER using a NN, including the issues of training, tuning, and sample reduction and presents results obtained through an extensive simulation.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86393889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Thin films residual stress profile evaluation using test microstructures: Illustrated on an example of AlN film 用测试显微结构评价薄膜残余应力剖面:以氮化铝薄膜为例

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-05-03 DOI: 10.1116/6.0001032

Parsoua A. Sohi, I. Stateikina, M. Kahrizi

{"title":"Thin films residual stress profile evaluation using test microstructures: Illustrated on an example of AlN film","authors":"Parsoua A. Sohi, I. Stateikina, M. Kahrizi","doi":"10.1116/6.0001032","DOIUrl":"https://doi.org/10.1116/6.0001032","url":null,"abstract":"In this study, we investigate the residual stress gradient of aluminum nitride thin film deposited by reactive pulse DC magnetron sputtering technique on a 200 mm diameter silicon wafer with a 1 μm layer of plasma enhanced chemical vapor deposition tetraethylorthosilicate. Stress measurements are obtained using in situ fabricated rotational beam microstructures. The rotating beam moves in response to relief of the residual stress on the connecting arms that experience lengthening or shortening due to compressive or tensile residual stresses, respectively. Various arm-beam connecting joints, separation gaps between the arms, and arm lengths are considered to determine the optimum microstructure for localized residual stress evaluation of the sputtered aluminum nitride. The displacement of the rotating beams with four different arm-beam connecting-joint designs is analytically modeled using COMSOL multiphysics finite element method simulation. The results of the analytical model were found to be in agreement with the results observed through experiments. The stress gradient measurements obtained using the microstructures are compared to the Stoney stress evaluated using a wafer bow technique. Although the predicted Stoney stress shows a 220 MPa tensile residual stress, the observed trend in localized stress values shows that the maximum stress is 280 MPa at the center of the wafer and reduces to about 100 MPa at the edge of the wafer.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73541100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Fully vertical gallium nitride trench MOSFETs fabricated with metal-free gate first process 全垂直氮化镓沟槽mosfet的无金属栅极工艺

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-04-30 DOI: 10.1116/6.0000980

Kevin Dannecker, J. Baringhaus

{"title":"Fully vertical gallium nitride trench MOSFETs fabricated with metal-free gate first process","authors":"Kevin Dannecker, J. Baringhaus","doi":"10.1116/6.0000980","DOIUrl":"https://doi.org/10.1116/6.0000980","url":null,"abstract":"We report on the fabrication and characterization of fully vertical gallium nitride trench metal oxide semiconductor field effect transistors on native substrates with a metal-free gate first process and a chlorine-free trench etching method. Trenches were fabricated using sulfur hexafluoride and argon plasma etching in combination with alkaline wet etching posttreatment to create crystal oriented trenches along the a- and m-planes. Low pressure chemical vapor deposited silicon dioxide was used as gate dielectric with a poly-silicon gate contact. The metal-free gate structure was separated by a silicon dioxide passivation from any subsequent metal containing contact formation processing steps. The breakdown robustness of the gate structure was examined in the forward direction and no temperature dependence was observed up to 450 K. Fabricated trench MOSFETs showed only small hysteresis effects during transfer characterization but a positive threshold shift was observed. An inversion channel carrier field effect mobility of ≈ 10 cm 2/V s was extracted. The area specific on resistance was calculated to be 5.8 m Ω cm 2. Results for devices with differently oriented trenches were comparable and no significant performance difference was observed.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91142055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1