Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena最新文献_第3页

Electrical characterization of gate stack charge traps in floating body gate-all-around field-effect-transistors 浮体栅极全能场效应晶体管栅极堆叠电荷阱的电学特性

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-04-28 DOI: 10.1116/6.0000906

M. Nguyen, An Hoang-Thuy Nguyen, Jiyong Yim, Anh-Duy Nguyen, Mingyu Kim, Jeonghan Kim, Jong-hyun Beak, R. Choi

引用次数: 0

Improvement of silicon microdisk resonators with movable waveguides by hydrogen annealing treatment 用氢退火法改进可动波导硅微盘谐振器

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-04-22 DOI: 10.1116/6.0000971

Taiyu Okatani, Yuichi Sato, K. Imai, K. Hane, Y. Kanamori

{"title":"Improvement of silicon microdisk resonators with movable waveguides by hydrogen annealing treatment","authors":"Taiyu Okatani, Yuichi Sato, K. Imai, K. Hane, Y. Kanamori","doi":"10.1116/6.0000971","DOIUrl":"https://doi.org/10.1116/6.0000971","url":null,"abstract":"In silicon photonics, silicon microdisk resonators with movable waveguides driven by electrostatic comb-drive actuators have been used as wavelength-selective switches. However, the sidewall roughness of silicon waveguides formed by the etching process is the main cause of optical loss in such devices, which leads to the deterioration of the wavelength selectivity. In this study, we fabricated a silicon microdisk resonator with a movable waveguide and performed a hydrogen annealing treatment as a postprocessing step to remove the sidewall roughness. By using scanning electron microscopy, a reduction in sidewall roughness was confirmed following the hydrogen annealing treatment. Then, the extinction ratio at the through port was evaluated while changing the gap between the microdisk and the movable waveguide. A dip in the extinction ratio was observed at the resonant wavelength while decreasing the gap, which indicated that the fabricated device successfully functioned as a wavelength-selective switch. Due to the hydrogen annealing treatment, the quality factor of the dip increased from 7102 to 37 402. These results show that the hydrogen annealing treatment can be used as a postprocessing step and is helpful for improving the wavelength selectivity of silicon photonic wavelength-selective switches.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81330208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Systematic study of the outgassing behavior of different ceramic materials 系统研究了不同陶瓷材料的脱气行为

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-04-14 DOI: 10.1116/6.0000954

K. Battes, C. Day, V. Hauer

{"title":"Systematic study of the outgassing behavior of different ceramic materials","authors":"K. Battes, C. Day, V. Hauer","doi":"10.1116/6.0000954","DOIUrl":"https://doi.org/10.1116/6.0000954","url":null,"abstract":"The outgassing rates of various ceramic materials were systematically investigated. This paper intercompares the most relevant ceramic material classes used in vacuum technology, namely, oxide (five different types investigated) and non-oxide based ceramics, including nitrides (four different types) and carbides (three different types). For this purpose, the Outgassing Measurement Apparatus, which uses the difference method, was applied. Besides time, also, temperature dependence of outgassing was studied to check whether a previous heat treatment of the ceramics is necessary. Additionally, the outgassing species were qualitatively determined by a quadrupole mass spectrometer. In total, relatively large differences were found between the investigated ceramic materials for their initial outgassing rates as well as for their behavior at elevated temperatures. All investigated types of carbide ceramics showed very low outgassing rates of less than 3 × 10−8 Pa m3/(s m2) after 100 h at room temperature, whereas rather high outgassing rates of about 10−5 Pa m3/(s m2) were found for magnesia as well as the tested nitride ceramic types. Thus, depending on the ceramic material, a heat treatment is strongly recommended before use in ultrahigh vacuum applications.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87368762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Behavior of photoexcited electrons in hole-transport material-free perovskite solar cells 无空穴输运材料钙钛矿太阳能电池中光激发电子的行为

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-04-12 DOI: 10.1116/6.0000913

M. Hirai, Y. Takagi, N. Fujita

{"title":"Behavior of photoexcited electrons in hole-transport material-free perovskite solar cells","authors":"M. Hirai, Y. Takagi, N. Fujita","doi":"10.1116/6.0000913","DOIUrl":"https://doi.org/10.1116/6.0000913","url":null,"abstract":"Hole-transport material-free perovskite solar cells were prepared by utilizing a spin-coating method. To optimize the dropping conditions of the toluene as an antisolvent in the nitrogen atmosphere, the CH3NH3PbI3/TiO2/fluorine-doped tin oxide (FTO)/glass specimen consisted of a high-density tissue, and crystal faults such as voids and cracks were not observed on its surface. By controlling the thickness of the mesoporous TiO2 layer with the rotation speed (x) of a spin coater, it was speculated that the thicker mesoporous TiO2 layer enables not only an efficient electron extraction from the CH3NH3PbI3 perovskite layer but also a smooth transition of electrons to the FTO electrode. Moreover, the precursor solution for CH3NH3PbI3 perovskite crystals was optimized for its molar concentration (y). The energy conversion efficiency (η) gradually increased from η = 5.8% to 9.6% with an increase in y to 2.6 M above which it decreased. The reason to obtain a superior energy conversion efficiency is so that the larger interface between the mesoporous TiO2 and perovskite layers is able to extract photoexcited electrons effectively. The above facts show for that the perovskite solar cells that have a larger area are synthesized with good reproducibility.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84784520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Determining the field enhancement factors of various field electron emitters with high numerical accuracy 高精度地确定了各种场电子发射体的场增强系数

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-03-29 DOI: 10.1116/6.0000949

F. F. Dall’Agnol, S. Filippov, E. O. Popov, A. G. Kolosko, T. A. de Assis

引用次数: 10

Electronic structure and field emission characteristics of a new kind of BeO nanotubes: A first-principles study 一种新型BeO纳米管的电子结构和场发射特性:第一性原理研究

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-03-29 DOI: 10.1116/6.0000945

Shunfu Xu, Wei-hui Liu, Ziliang Zhu, Chun Li, G. Yuan

引用次数: 2

Influence of primary electron incident angle and electron bombardment on the secondary electron yield of laser-treated copper 一次电子入射角和电子轰击对激光处理铜二次电子产率的影响

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-03-29 DOI: 10.1116/6.0000952

Yigang Wang, Wenli Zhang, Sihui Wang, Wei Wei, Jian Fang, B. Zhu, Yong Wang

引用次数: 3

Advances in secondary ion mass spectrometry for N-doped niobium n掺杂铌的二次离子质谱分析进展

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-03-22 DOI: 10.1116/6.0000848

J. Angle, A. Palczewski, C. Reece, F. Stevie, M. Kelley

引用次数: 4

Publisher’s Note: “Silicon field emitters fabricated by dicing-saw and wet-chemical-etching” [J. Vac. Sci. Technol. B 39, 013205 (2021)] 出版人注:“由切片锯和湿化学蚀刻制造的硅场发射体”[J]。真空吸尘器。科学。抛光工艺。B 39, 013205 (2021)]

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-03-17 DOI: 10.1116/6.0000974

S. Edler, A. Schels, J. Biba, W. Hansch, M. Bachmann, F. Düsberg, Marinus Werber, C. Langer, M. Meyer, David von Bergen, A. Pahlke

引用次数: 0

Optical emission intensity overshoot and electron heating mechanisms during the re-ignition of pulsed capacitively coupled Ar plasmas 脉冲电容耦合氩等离子体重燃过程中的光发射强度超调和电子加热机制

Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Pub Date : 2021-03-17 DOI: 10.1116/6.0000679

Keith Hernandez, A. Press, M. Goeckner, L. Overzet

引用次数: 5