高精度地确定了各种场电子发射体的场增强系数

F. F. Dall’Agnol, S. Filippov, E. O. Popov, A. G. Kolosko, T. A. de Assis
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引用次数: 10

摘要

场电子发射的理论分析必须考虑许多参数,其中最重要的是场增强因子。在单尖端形式下,当发射极和反电极之间的间隙长度远远大于发射极的高度时,FEF可以变化几个数量级,并且仅取决于系统的几何形状。在这项工作中,我们确定了五种不同形状的发射器的FEF的非常精确的解析表达式,这些形状在文献中经常被认为是:椭球、半柱面柱、半正交锥、抛物面和双曲面。我们将FEF映射为宽高比的函数,误差小于2%,作为快速参考数据库。此外,我们还计算了发射器上的电场分布,这可以深入了解有效的概念发射面积和发射器基极的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Determining the field enhancement factors of various field electron emitters with high numerical accuracy
Theoretical analysis of field electron emission must consider many parameters, one of the most critical being the field enhancement factor (FEF). In a single tip form, the FEF can vary several orders of magnitude and depends only on the system geometry, when the gap length between the emitter and counter-electrode is much greater than the height of the emitter. In this work, we determine very accurate analytical expressions for the FEF of five emitters with various shapes, which are often considered in the literature: Ellipsoidal, Hemisphere-on-Cylindrical post, Hemisphere-on-Orthogonal cone, Paraboloidal, and Hyperboloidal. We map the FEF as a function of the aspect ratio with an error smaller than 2% to serve as a quick reference database. Additionally, we calculate the electric field distribution over the emitters, which can give an insight into the effective notional emission area and the influence of the emitter’s base.
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