平面场发射器件的长期场发射电流稳定性表征

R. Bhattacharya, M. Turchetti, P. Keathley, K. Berggren, J. Browning
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引用次数: 5

摘要

为了研究横向场发射器件的稳定性和可靠性,对其进行了>1000 h的表征和退化测试。研究了二极管和领结两种平面器件结构。这些纳米级器件具有10-20纳米的尖端到尖端或尖端到收集器的尺寸,尖端由Au/Ti制成。测量了6 V时2-6 nA的典型电流。一生测试设备被放置在真空中1000 h。7总设备的测试和一个失败的h . 300和三个设备显示<当前降解5%直到1400 h测试停止的时候,和其他三个设备显示≈突然下降20%,从700年到900年h。光学显微镜图像的一个灾难性的失败的设备在350 h显示物理电弧伤害债券垫缩小发射器痕迹。运行1400 h后的领结部分扫描电镜图像显示,领结尖端没有明显的侵蚀和损伤。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Long term field emission current stability characterization of planar field emitter devices
Lateral field emission devices have been characterized and degradation tested for >1000 h to study stability and reliability. Two types of planar device structures, diode and bowtie, were studied. These nanoscale devices have 10–20 nm tip to tip or tip to collector dimensions with the tips fabricated from Au/Ti. Typical currents of 2–6 nA at 6 V were measured. The devices were placed on lifetime tests in a vacuum of 1000 h. Seven total devices were tested with one failing at 300 h. and three of the devices showed <5% degradation in current until 1400 h when testing was stopped, and three other devices showed a sudden drop of ≈20% ranging from 700 to 900 h. Optical microscope images of one of the devices that failed catastrophically at 350 h show physical arc damage where the bond pad narrows to the emitter trace. Scanning electron microscope images of a bowtie part that completed 1400 h of operation showed no obvious erosion or damage to the tips.
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