2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)最新文献

Ultra-low specific on-resistance SOI high voltage trench LDMOS with dielectric field enhancement based on ENBULF concept 基于ENBULF概念的具有介质场增强的超低比导通电阻SOI高压沟槽LDMOS

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI: 10.1109/ISPSD.2013.6694415

Wentong Zhang, M. Qiao, Lijuan Wu, Ke Ye, Zhuo Wang, Zhigang Wang, X. Luo, Sen Zhang, Wei Su, Bo Zhang, Zhaoji Li

{"title":"Ultra-low specific on-resistance SOI high voltage trench LDMOS with dielectric field enhancement based on ENBULF concept","authors":"Wentong Zhang, M. Qiao, Lijuan Wu, Ke Ye, Zhuo Wang, Zhigang Wang, X. Luo, Sen Zhang, Wei Su, Bo Zhang, Zhaoji Li","doi":"10.1109/ISPSD.2013.6694415","DOIUrl":"https://doi.org/10.1109/ISPSD.2013.6694415","url":null,"abstract":"An ultra-low specific on-resistance (Ron, sp) high voltage trench SOI LDMOS based on the enhanced bulk field (ENBULF) concept is proposed. The key feature of this new device is heavily doped N/P pillars parallel to the trench oxide layer. The bulk electric field of the trench LDMOS is enhanced both in the dielectric and the silicon layer by using the N/P pillars. Firstly, the highly doped N/P pillars introduce two new electric field peaks in the bulk of the drift region, which enhances the bulk electric fields both under the drain and source. Secondly, the additional electric field of the trench oxide layer is produced by N/P pillars, leading to a shrink of the drift area. Thirdly, the enhanced dielectric layer field (ENDIF) effect of the BOX layer occurs self-adaptively with different thicknesses of the BOX layer. Combining the trench and SJ technologies, the cell pitch is reduced and the optimized doping concentration of the drift region is increased. The Ron,sp is therefore reduced efficiently. The 2-D analytical model of the ENBULF LDMOS is developed to guide the design of the novel device. Based on the model and the simulation, the ENBULF LDMOS exhibits a offstate BV of 684 V and a Ron, sp of 48.5 mΩ·cm2. The new device breaks through the silicon limit in a wide applied voltage levels.","PeriodicalId":175520,"journal":{"name":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121135516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 25

A novel snapback-free reverse conducting IGBT with anti-parallel Shockley diode 一种具有反并联肖克利二极管的新型无回跳反导IGBT

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI: 10.1109/ISPSD.2013.6694436

Liheng Zhu, Xingbi Chen

引用次数: 22

15 kV SiC PiN diodes achieve 95% of avalanche limit and stable long-term operation 15kv SiC引脚二极管达到95%的雪崩极限，长期稳定工作

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI: 10.1109/ISPSD.2013.6694474

S. Sundaresan, M. Marripelly, Svetlana Arshavsky, R. Singh

引用次数: 11

Full-Integrated power module for motor drive applications 用于电机驱动应用的全集成电源模块

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI: 10.1109/ISPSD.2013.6694466

Qing Hua, Zehong Li, Bo Zhang, Weizhong Chen, Xiangjun Huang, Dekai Cheng

{"title":"Full-Integrated power module for motor drive applications","authors":"Qing Hua, Zehong Li, Bo Zhang, Weizhong Chen, Xiangjun Huang, Dekai Cheng","doi":"10.1109/ISPSD.2013.6694466","DOIUrl":"https://doi.org/10.1109/ISPSD.2013.6694466","url":null,"abstract":"This paper proposes an IGBT-based full-integrated power module (FIPM) that we have newly developed for compactness, high performance and low cost motor drive applications. It integrates all necessary power and control components to form a motor control system for the inverter air conditioner. Inside the FIPM there are a copper-dielectric-aluminum (CDA) substrate and a printed circuit board (PCB) substrate. All the power components such as the IGBTs and the freewheeling diodes (FWDs) are soldered directly on the CDA substrate, while the low power components such as the gate drivers, the micro control unit (MCU) and the passive components are assembled on the PCB substrate, which offers significant flexibility in the circuit layout. With this type of structure, the switching noise of the power devices that coupling to the gate drivers are effectively prevented. The electrical performance is improved by utilizing trench gate non-punch through (NPT) IGBTs which matched with its anti-parallel FWDs. Additionally, the reliability of the FIPM is further enhanced by using the aluminum layer double-sided oxidizing technology of the CDA substrate. Moreover, a large reduction of the junction to case thermal resistance of this FIPM is achieved by utilizing the half-molded resin package technology, which is especially suitable for the high power applications that need extremely good heat conductivity.","PeriodicalId":175520,"journal":{"name":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126963944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A segmented gate driver IC for the reduction of IGBT collector current over-shoot at turn-on 一种用于降低IGBT集电极导通时电流过冲的分段栅极驱动IC

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI: 10.1109/ISPSD.2013.6694400

A. Shorten, W. Ng, M. Sasaki, T. Kawashima, H. Nishio

引用次数: 29

A novel low-side structure for OPTVLD-SPIC technologically compatible with BiCMOS 与BiCMOS技术兼容的新型OPTVLD-SPIC低侧结构

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI: 10.1109/ISPSD.2013.6694444

Junji Cheng, Xingbi Chen

引用次数: 3

Reliability improvement in field-MOS FETs with thick gate oxide for 300-V applications 300v应用中厚栅氧化场mos场效应管的可靠性改进

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI: 10.1109/ISPSD.2013.6694428

T. Miyoshi, T. Tominari, Y. Hayashi, T. Oshima, S. Wada, J. Noguchi

引用次数: 5

A novel 3D TSV transformer technology for digital isolator gate driver applications 一种新型的三维TSV变压器技术，用于数字隔离栅驱动器

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI: 10.1109/ISPSD.2013.6694399

Lulu Peng, Rongxiang Wu, Xiangming Fang, Y. Toyoda, Masashi Akahane, M. Yamaji, H. Sumida, J. Sin

引用次数: 9

JFET pinched bootstrap diode (JPBD) without substrate leakage current integration to 120V BCDMOS process 无衬底漏电流的JFET钳位自举二极管(JPBD)集成到120V BCDMOS工艺

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI: 10.1109/ISPSD.2013.6694447

Sunglyong Kim, Jongjib Kim, Sunhak Lee, Hyemi Kim

引用次数: 1

High threshold voltage p-GaN gate power devices on 200 mm Si 高阈值电压p-GaN栅极功率器件在200mm Si

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI: 10.1109/ISPSD.2013.6694412

Jongseob Kim, Sun-Kyu Hwang, I. Hwang, Hyoji Choi, S. Chong, Hyun-Sik Choi, W. Jeon, Hyuk Soon Choi, Jun Yong Kim, Y. Park, K. Kim, Jong-bong Park, J. Ha, Kiyeol Park, Jae-joon Oh, J. Shin, U. Chung, I. Yoo, Kinam Kim

引用次数: 21