A novel low-side structure for OPTVLD-SPIC technologically compatible with BiCMOS

Abstract

A novel low-side structure based on the optimum variation lateral doping (OPTVLD) technique, which is formed by many inner VDMOS cells combining an outermost LDMOS, is realized in the 0.8μm BiCMOS-compatible technology. With the benefit of the additional vertical cells, it presents a low specific on-resistance with high breakdown voltage, which significantly advances the prior art. Furthermore, since this low-side structure is capable of being integrated with high-side structure and circuits on a single chip, through the low-cost self-isolation (SI) technology, it is very attractive for fabricating the smart power IC (SPIC) better and cheaper.