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Journal of Vacuum Science & Technology B最新文献

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Optimized ultraviolet grayscale process for high vertical resolution applied to spectral imagers 优化紫外灰度处理的高垂直分辨率应用于光谱成像仪
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2021-12-01 DOI: 10.1116/6.0001273
Nadine Gerges, C. Petit-Etienne, M. Panabière, J. Boussey, Y. Ferrec, C. Gourgon
{"title":"Optimized ultraviolet grayscale process for high vertical resolution applied to spectral imagers","authors":"Nadine Gerges, C. Petit-Etienne, M. Panabière, J. Boussey, Y. Ferrec, C. Gourgon","doi":"10.1116/6.0001273","DOIUrl":"https://doi.org/10.1116/6.0001273","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"34 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75079270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stress reduction and wafer bow accommodation for the fabrication of thin film lithium niobate on oxidized silicon 在氧化硅上制备铌酸锂薄膜的应力减小和晶圆弯曲调节
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2021-12-01 DOI: 10.1116/6.0001283
K. Prabhakar, Ryan J. Patton, R. Reano
{"title":"Stress reduction and wafer bow accommodation for the fabrication of thin film lithium niobate on oxidized silicon","authors":"K. Prabhakar, Ryan J. Patton, R. Reano","doi":"10.1116/6.0001283","DOIUrl":"https://doi.org/10.1116/6.0001283","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"27 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85222461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Multiplexing implementation of rubbing-induced site-selective growth of MoS2 feature arrays 摩擦诱导的MoS2特征阵列选择性生长的多路复用实现
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2021-12-01 DOI: 10.1116/6.0001268
Mingze Chen, S. Ki, Xiaogan Liang
{"title":"Multiplexing implementation of rubbing-induced site-selective growth of MoS2 feature arrays","authors":"Mingze Chen, S. Ki, Xiaogan Liang","doi":"10.1116/6.0001268","DOIUrl":"https://doi.org/10.1116/6.0001268","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"150 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77419315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Long-term brain-on-chip: Multielectrode array recordings in 3D neural cell cultures 长期脑芯片:三维神经细胞培养中的多电极阵列记录
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2021-12-01 DOI: 10.1116/6.0001297
Yağmur Demircan Yalçın, A. Bastiaens, Jean-Philippe Frimat, R. Luttge
{"title":"Long-term brain-on-chip: Multielectrode array recordings in 3D neural cell cultures","authors":"Yağmur Demircan Yalçın, A. Bastiaens, Jean-Philippe Frimat, R. Luttge","doi":"10.1116/6.0001297","DOIUrl":"https://doi.org/10.1116/6.0001297","url":null,"abstract":"This study presents sensing of network bursts in a three-dimensional (3D) cell culture system consisting of a microbioreactor and a multielectrode array (MEA), i.e., brain-on-chip, to interpret neural network dynamics in a label-free manner. While our initial results reported an increased single spiking activity already over the course of days 7, 14, and 21 in vitro , the advanced long-term analysis of the data set (including a last timepoint at day 79) here demonstrates a proof-of-principle for following bursting patterns upon maturation of the network in the microbioreactor as an add-on device for a commercial MEA recording system. These quantitative electrophysiological findings, including mean bursting rate, mean burst duration, and network burst dynamics, confirm a 2D to 3D transition in coherence with the literature.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"65 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82092828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Diffusion coefficient of charge carriers in disordered semiconductors retaining a combination of exponential and Gaussian mobility-gap states: Application to amorphous selenium 无序半导体中保持指数和高斯迁移间隙态组合的载流子扩散系数:在非晶硒中的应用
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2021-12-01 DOI: 10.1116/6.0001516
Dilshad Hossain, M. Z. Kabir
{"title":"Diffusion coefficient of charge carriers in disordered semiconductors retaining a combination of exponential and Gaussian mobility-gap states: Application to amorphous selenium","authors":"Dilshad Hossain, M. Z. Kabir","doi":"10.1116/6.0001516","DOIUrl":"https://doi.org/10.1116/6.0001516","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"55 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85147939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Identifying extreme ultraviolet lithography attenuated phase shifting mask absorber materials using effective media approximation modeling 利用有效介质近似模型确定极紫外光刻衰减相移掩模吸收材料
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2021-12-01 DOI: 10.1116/6.0001298
R. Sejpal, Bruce W. Smith
{"title":"Identifying extreme ultraviolet lithography attenuated phase shifting mask absorber materials using effective media approximation modeling","authors":"R. Sejpal, Bruce W. Smith","doi":"10.1116/6.0001298","DOIUrl":"https://doi.org/10.1116/6.0001298","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"98 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76859594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Bridging the gap: Perspectives of nanofabrication technologies for application-oriented research 弥合差距:面向应用研究的纳米制造技术的前景
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2021-12-01 DOI: 10.1116/6.0001299
M. Baum, C. Meinecke, T. Blaudeck, C. Helke, D. Reuter, K. Hiller, S. Hermann, S. E. Schulz, H. Kuhn
{"title":"Bridging the gap: Perspectives of nanofabrication technologies for application-oriented research","authors":"M. Baum, C. Meinecke, T. Blaudeck, C. Helke, D. Reuter, K. Hiller, S. Hermann, S. E. Schulz, H. Kuhn","doi":"10.1116/6.0001299","DOIUrl":"https://doi.org/10.1116/6.0001299","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"15 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72993691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Using static linear response theory to describe field emission field enhancement and a field-induced insulator-conductor transition 用静态线性响应理论描述场发射、场增强和场致绝缘子-导体跃迁
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2021-12-01 DOI: 10.1116/6.0001550
C. P. de Castro, T. A. de Assis, R. Rivelino, F. Mota, C. D. de Castilho
{"title":"Using static linear response theory to describe field emission field enhancement and a field-induced insulator-conductor transition","authors":"C. P. de Castro, T. A. de Assis, R. Rivelino, F. Mota, C. D. de Castilho","doi":"10.1116/6.0001550","DOIUrl":"https://doi.org/10.1116/6.0001550","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"117 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86178595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Postdeposition annealing effect on atomic-layer-deposited Al2O3 gate insulator on (001) β-Ga2O3 (001) β-Ga2O3上原子层沉积Al2O3栅极绝缘子的沉积后退火效应
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2021-12-01 DOI: 10.1116/6.0001360
A. Hiraiwa, K. Horikawa, H. Kawarada, M. Kado, K. Danno
{"title":"Postdeposition annealing effect on atomic-layer-deposited Al2O3 gate insulator on (001) β-Ga2O3","authors":"A. Hiraiwa, K. Horikawa, H. Kawarada, M. Kado, K. Danno","doi":"10.1116/6.0001360","DOIUrl":"https://doi.org/10.1116/6.0001360","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"106 5 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83939794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Maintaining atomically smooth GaAs surfaces after high-temperature processing for precise interdiffusion analysis and materials engineering 在高温处理后保持原子光滑的GaAs表面，用于精确的相互扩散分析和材料工程
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2021-12-01 DOI: 10.1116/6.0001399
L. Miroshnik, B. Rummel, Andrew B. Li, G. Balakrishnan, T. Sinno, S. Han
{"title":"Maintaining atomically smooth GaAs surfaces after high-temperature processing for precise interdiffusion analysis and materials engineering","authors":"L. Miroshnik, B. Rummel, Andrew B. Li, G. Balakrishnan, T. Sinno, S. Han","doi":"10.1116/6.0001399","DOIUrl":"https://doi.org/10.1116/6.0001399","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"2 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87559297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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