Maintaining atomically smooth GaAs surfaces after high-temperature processing for precise interdiffusion analysis and materials engineering

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-12-01 DOI:10.1116/6.0001399

L. Miroshnik, B. Rummel, Andrew B. Li, G. Balakrishnan, T. Sinno, S. Han

引用次数: 4

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在高温处理后保持原子光滑的GaAs表面，用于精确的相互扩散分析和材料工程

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Vacuum Science & Technology B 工程技术-工程：电子与电气

自引率

14.30%

发文量

审稿时长

2.5 months

期刊介绍： Journal of Vacuum Science & Technology B emphasizes processing, measurement and phenomena associated with micrometer and nanometer structures and devices. Processing may include vacuum processing, plasma processing and microlithography among others, while measurement refers to a wide range of materials and device characterization methods for understanding the physics and chemistry of submicron and nanometer structures and devices.