Journal of Vacuum Science & Technology B最新文献_第10页

Hybrid structures by direct write lithography—Tuning the contrast and surface topography of grayscale photoresist with nanoimprint 直写光刻的杂化结构——纳米压印对灰度光刻胶对比度和表面形貌的调节

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-09-01 DOI: 10.1116/6.0001206

Sijia Xie, J. Erjawetz, C. Schuster, H. Schift

引用次数: 5

Evaluation of electron currents from cesium-coated tungsten emitter arrays with inclusion of space charge effects, workfunction changes, and screening 包含空间电荷效应、工作函数变化和筛选的铯包覆钨发射极阵列的电子电流评估

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-08-09 DOI: 10.1116/6.0001185

D. Guo, S. Sami, L. Diaz, M. Sanati, R. Joshi

引用次数: 3

New leak elements for helium based on single-layer graphene composite membranes 基于单层石墨烯复合膜的新型氦泄漏元件

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-07-23 DOI: 10.1116/6.0001068

Zhaoxian Liu, D. Meng, G. Ren, Xiao Zhang, Yan Han, Lina Wang, Wei Sun, Lichen Sun, R. Yan

{"title":"New leak elements for helium based on single-layer graphene composite membranes","authors":"Zhaoxian Liu, D. Meng, G. Ren, Xiao Zhang, Yan Han, Lina Wang, Wei Sun, Lichen Sun, R. Yan","doi":"10.1116/6.0001068","DOIUrl":"https://doi.org/10.1116/6.0001068","url":null,"abstract":"Graphene containing intrinsic pores with molecular dimensions is a highly promising material for standard leak elements because of its minimal and stable gas flow. However, the etching of polymethyl methacrylate (PMMA) during the typical graphene transfer process can cause the rupture of graphene on the porous substrate due to the surface tension as the etchant solution dries out. In this article, we simplified the typical graphene transfer process that enabled the transfer of a PMMA/graphene composite membrane onto a macroporous Cu gasket as the leak element and tested the leak rate, time stability, and response time of the composite membrane. The membrane permeation area depends on the pore size of the Cu substrate, which can be controlled by laser ablation or computer numerical control milling. To ensure the accuracy of time stability, the entire test lasted 60 days. The conductance results for two devices with a permeation size of 50 and 500 μm were about 10−17 and 10−14 m3 s−1, and the maximum variation of conductance in 60 days was 14% and 2.6%, respectively. Accordingly, the permeance of the composite membrane for helium can be calculated as 4.17 × 10−12–1.09 × 10−11 Pa m3 (cm2 s Pa)−1. Moreover, the composite membrane has been proven to have a rapid response of about 2 s to the upstream pressure.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":null,"pages":null},"PeriodicalIF":1.4,"publicationDate":"2021-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88786526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Si-capping-induced surface roughening on the strip structures of Ge selectively grown on an Si substrate 在Si衬底上选择性生长的Ge条带结构的硅帽诱导表面粗化

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-07-19 DOI: 10.1116/6.0001142

Riku Katamawari, K. Kawashita, T. Hizawa, Y. Ishikawa

{"title":"Si-capping-induced surface roughening on the strip structures of Ge selectively grown on an Si substrate","authors":"Riku Katamawari, K. Kawashita, T. Hizawa, Y. Ishikawa","doi":"10.1116/6.0001142","DOIUrl":"https://doi.org/10.1116/6.0001142","url":null,"abstract":"Si-capping-induced surface roughening, accompanying Si–Ge alloying, is reported for strip structures of Ge selectively grown on Si via ultrahigh vacuum chemical vapor deposition. A 0.7-μm-wide strip structure of Ge running in the [110] direction, as well as a 100-μm-wide mesa structure, is selectively grown on an Si (001) surface exposed in an SiO2-masked Si substrate. In contrast to a wide mesa structure with a Ge thickness of 0.5 μm, composed of a (001) plane at the top and {113} facet planes at the sidewalls, the (001) top plane almost disappears for the narrow strip structure. The strip is mainly surrounded with inclined {113} planes near the top and adjacent {111} planes at the side, while the structure near the bottom edges depends on the growth temperature (600/700 °C). An Si cap layer with a thickness of 10 nm or larger is subsequently grown at 600 °C to protect the fragile Ge surface. The scanning electron microscopy observations reveal a roughened surface on the {113} planes, with depressions specifically induced near the boundary with the {111} planes. The Raman spectra indicate that an SiGe alloy is formed on the strip and the wide mesa sidewalls due to the Si–Ge interdiffusion. There is no such SiGe alloy on the (001) plane of the wide mesa top. The Si cap layer with a misfit strain probably works as a stressor for the underlying Ge, applying stress concentrated around the facet boundaries and inducing a mass transport alongside the Si–Ge interdiffusion for strain relaxation. In terms of the fabrication of practical devices, it is important to suppress the roughening and alloying significantly by decreasing the growth temperature for the Si cap layer from 600 to 530 °C.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":null,"pages":null},"PeriodicalIF":1.4,"publicationDate":"2021-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88866165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Molecular dynamics simulation for reactive ion etching of Si and SiO2 by SF 5 + ions sf5 +离子蚀刻Si和SiO2的分子动力学模拟

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-07-14 DOI: 10.1116/6.0001230

E. J. C. Tinacba, Tomoko Ito, K. Karahashi, M. Isobe, S. Hamaguchi

{"title":"Molecular dynamics simulation for reactive ion etching of Si and SiO2 by SF 5 + ions","authors":"E. J. C. Tinacba, Tomoko Ito, K. Karahashi, M. Isobe, S. Hamaguchi","doi":"10.1116/6.0001230","DOIUrl":"https://doi.org/10.1116/6.0001230","url":null,"abstract":"Silicon (Si)-based materials such as Si and silicon dioxide ( SiO 2) are commonly used as basic components of advanced semiconductor devices. For example, alternating stacks of poly-Si and SiO 2 layers are used in three-dimensional (3D) NAND flash memory devices. Fabrication of high-aspect-ratio deep holes through such stacked materials by plasma etching may be achieved by highly energetic and chemically reactive ion injections to the surface. Etching by sulfur hexafluoride ( SF 6) plasmas can produce ions carrying multiple fluorine (F) atoms and therefore exhibit high etch rates for both Si and SiO 2. In this study, reactive ion etching of Si and SiO 2 materials by SF 5 + ions was examined with the use of molecular dynamics (MD) simulation. For this purpose, a simplified interatomic potential functions model for sulfur (S) was developed that approximately represents molecular moieties or molecules SF n ( n ≤ 6) based on density-functional-theory (DFT) calculations. The etching yields of Si and SiO 2 by SF 5 + ions evaluated by MD simulations with these new potential functions were found to be in good agreement with those obtained from multibeam injection system experiments, which implies that the etching process is essentially due to sputtering enhanced by chemical reactions of F atoms with the surface materials. Analyses of the depth profiles of atomic concentrations of etched surfaces and desorbed species obtained from MD simulations also indicate that the presence of excess F atoms on the surface enhances the etching yield of Si and SiO 2 significantly over corresponding physical sputtering.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":null,"pages":null},"PeriodicalIF":1.4,"publicationDate":"2021-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74136150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Effect of thermodynamic parameters on properties of silicon-carbon films prepared by radio-frequency plasma-enhanced chemical vapor deposition for anti-reflective and photo-luminescent coatings 热力学参数对射频等离子体增强化学气相沉积制备的硅碳薄膜性能的影响

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-07-14 DOI: 10.1116/6.0001052

William W. Hernández-Montero, A. Itzmoyotl-Toxqui, C. Zuñiga-Islas

{"title":"Effect of thermodynamic parameters on properties of silicon-carbon films prepared by radio-frequency plasma-enhanced chemical vapor deposition for anti-reflective and photo-luminescent coatings","authors":"William W. Hernández-Montero, A. Itzmoyotl-Toxqui, C. Zuñiga-Islas","doi":"10.1116/6.0001052","DOIUrl":"https://doi.org/10.1116/6.0001052","url":null,"abstract":"This work reports an experimental study on the synthesis of hydrogenated amorphous silicon-carbon (a-SiC:H) films with improved antireflective and photo-luminescent characteristics. These films were prepared by plasma-enhanced chemical vapor deposition at a radio frequency of 13.56 MHz, varying the thermodynamic parameters of pressure, gas flows, and temperature. Silane (SiH 4), methane (CH 4), and hydrogen (H 2) were the precursor gases. In a first experiment, composition in gas phase was varied and correlated to the composition in solid phase. Absorption spectra, conductivity, refractive index, optical gap, and photoluminescence (PL) were analyzed. Optical gap and fraction of carbon in gas phase showed a linear dependence with the atomic fraction of carbon in solid phase. Results indicated that the Si 0.4C 0.6 alloy exhibited a high PL as well as an optimal combination of optical gap and refractive index to be applied as antireflective coating. The subsequent optimization of PL was carried out by a fractional experiment, by varying pressure, H 2 flow, and temperature. Results revealed that PL can be improved at high pressure, without H 2 flow, and low temperature during glow discharge. Enhancement of PL was correlated to the proper concentration of silicon and carbon in the films, low dark conductivity, negative AM 1.5 conductivity, fluctuating current at low voltage, the increment of Si − H 2, C − H 2, and C = C bonds, along with vibrational energies in the range of 3190–3585 cm − 1.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":null,"pages":null},"PeriodicalIF":1.4,"publicationDate":"2021-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72927991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of high aspect ratio and tilted nanostructures using extreme ultraviolet and soft x-ray interference lithography 利用极紫外和软x射线干涉光刻技术制备高纵横比和倾斜纳米结构

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-07-13 DOI: 10.1116/6.0001089

N. Mojarad, D. Kazazis, Y. Ekinci

引用次数: 3

Selective volatile organic compound gas sensor based on carbon nanotubes functionalized with ZnO nanoparticles ZnO纳米粒子功能化碳纳米管的选择性挥发性有机化合物气体传感器

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-07-07 DOI: 10.1116/6.0000992

J. Xiang, A. Singhal, R. Divan, L. Stan, Yuzi Liu, I. Paprotny

引用次数: 6

Computational study of plasma dynamics and reactive chemistry in a low-pressure inductively coupled CF4/O2 plasma 低压电感耦合CF4/O2等离子体动力学和反应化学的计算研究

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-06-29 DOI: 10.1116/6.0001028

D. Levko, Chandrasekhar Shukla, R. Upadhyay, L. Raja

{"title":"Computational study of plasma dynamics and reactive chemistry in a low-pressure inductively coupled CF4/O2 plasma","authors":"D. Levko, Chandrasekhar Shukla, R. Upadhyay, L. Raja","doi":"10.1116/6.0001028","DOIUrl":"https://doi.org/10.1116/6.0001028","url":null,"abstract":"Plasma etching continues to play a central role in microelectronics manufacturing. As the semiconductor industry continues to shrink critical feature sizes and improves device performance, etch challenges continue to increase due to the requirement of processing smaller features along with new device structures. With their high density and high-aspect ratio features, these structures are challenging to manufacture and have required innovation in multiple areas of wafer processing. Innovations in this technology are increasingly reliant on comprehensive physical and chemical models of plasma etch processes. In the present paper, we develop a new mechanism of plasma chemical reactions for a low-pressure CF4/O2 plasma. We validate this mechanism against available experimental data using the self-consistent axisymmetric fluid model of inductively coupled plasma discharge. We show that this mechanism is in reasonable agreement with the results of experiments both quantitively and qualitatively. Using this mechanism, we analyze the influence of oxygen fraction in the feed gas mixture on the kinetics of the ion species and the fluorine and oxygen atom yield.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":null,"pages":null},"PeriodicalIF":1.4,"publicationDate":"2021-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84575103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Optical realization of the pascal—Characterization of two gas modulated refractometers 两个气体调制折光计帕斯卡表征的光学实现

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-06-28 DOI: 10.1116/6.0001042

I. Silander, C. Forssén, J. Zakrisson, M. Zelan, O. Axner

{"title":"Optical realization of the pascal—Characterization of two gas modulated refractometers","authors":"I. Silander, C. Forssén, J. Zakrisson, M. Zelan, O. Axner","doi":"10.1116/6.0001042","DOIUrl":"https://doi.org/10.1116/6.0001042","url":null,"abstract":"By measuring the refractivity and the temperature of a gas, its pressure can be calculated from fundamental principles. The most sensitive instruments are currently based on Fabry–Perot cavities where a laser is used to probe the frequency of a cavity mode. However, for best accuracy, the realization of such systems requires exceptional mechanical stability. Gas modulation refractometry (GAMOR) has previously demonstrated an impressive ability to mitigate the influence of fluctuations and drifts whereby it can provide high-precision (sub-ppm, i.e., sub-parts-per-million or sub- 10 − 6) assessment of gas refractivity and pressure. In this work, two independent GAMOR-based refractometers are individually characterized, compared to each other, and finally compared to a calibrated dead weight piston gauge with respect to their abilities to assess pressure in the 4–25 kPa range. The first system, referred to as the stationary optical pascal (SOP), uses a miniature fixed point gallium cell to measure the temperature. The second system, denoted the transportable optical pascal (TOP), relies on calibrated Pt-100 sensors. The expanded uncertainty for assessment of pressure ( k = 2) was estimated to, for the SOP and TOP, [ ( 10 mPa ) 2 + ( 10 × 10 − 6 P ) 2 ] 1 / 2 and [ ( 16 mPa ) 2 + ( 28 × 10 − 6 P ) 2 ] 1 / 2, respectively. While the uncertainty of the SOP is mainly limited by the uncertainty in the molar polarizability of nitrogen (8 ppm), the uncertainty of the TOP is dominated by the temperature assessment (26 ppm). To verify the long-term stability, the systems were compared to each other over a period of 5 months. It was found that all measurements fell within the estimated expanded uncertainty ( k = 2) for comparative measurements (27 ppm). This verified that the estimated error budget for the uncorrelated errors holds over this extensive period of time.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":null,"pages":null},"PeriodicalIF":1.4,"publicationDate":"2021-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81233417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9