ZnO纳米粒子功能化碳纳米管的选择性挥发性有机化合物气体传感器

IF 1.4 4区 工程技术
J. Xiang, A. Singhal, R. Divan, L. Stan, Yuzi Liu, I. Paprotny
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引用次数: 6

摘要

本文介绍了一种新型低成本化学电阻气体传感器的原理和结果,该传感器用于选择性烃类气体检测。传感器利用多壁碳纳米管(MWCNT)骨架与金属氧化物纳米晶体功能化。具体来说,纳米颗粒是通过原子层沉积在MWCNTs表面生长的。采用高分辨率透射电子显微镜观察ZnO-MWCNTs异质结构的结晶度。采用扫描电镜和能量色散x射线分析了ZnO/MWCNTs的结构。霍尔效应测量显示MWCNTs的p型特性,支持与n型ZnO纳米晶体形成典型的PN结。在室温(25℃)下,ZnO的给电子能力对甲苯的ppm浓度有很强的响应,对苯、甲烷和甲醛等其他挥发性有机化合物气体也有很强的选择性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Selective volatile organic compound gas sensor based on carbon nanotubes functionalized with ZnO nanoparticles
This paper describes the theory and results for a new class of low-cost chemoresistive gas sensors designed for selective hydrocarbon gas detection. The sensors utilize a multiwalled carbon nanotube (MWCNT) backbone functionalized with metal oxide nanocrystals. Specifically, nanoparticles were grown on the surface of the MWCNTs using atomic layer deposition. The crystallinity of the ZnO-MWCNTs’ heterostructure was examined by using a high-resolution transmission electron microscope. The structure of the ZnO/MWCNTs was analyzed using a scanning electron microscope and energy dispersive x ray. The Hall effect measurement shows p-type characteristics of the MWCNTs, supporting the typical PN junction formation with n-type ZnO nanocrystals. The electron-donating ability of ZnO provided a strong response to the ppm levels of toluene at room temperature (25 °C) and showed strong selectivity with other volatile organic compound gases such as benzene, methane, and formaldehyde.
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来源期刊
Journal of Vacuum Science & Technology B
Journal of Vacuum Science & Technology B 工程技术-工程:电子与电气
自引率
14.30%
发文量
0
审稿时长
2.5 months
期刊介绍: Journal of Vacuum Science & Technology B emphasizes processing, measurement and phenomena associated with micrometer and nanometer structures and devices. Processing may include vacuum processing, plasma processing and microlithography among others, while measurement refers to a wide range of materials and device characterization methods for understanding the physics and chemistry of submicron and nanometer structures and devices.
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