Journal of Vacuum Science & Technology B最新文献_第9页

Nanometer-scale capillary-driven flow and molecular weight govern polymer nanostructure deposition from a heated tip 纳米级毛细管驱动的流动和分子量决定了聚合物纳米结构在加热尖端的沉积

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-04-12 DOI: 10.1116/6.0000958

Sihan Chen, W. King

{"title":"Nanometer-scale capillary-driven flow and molecular weight govern polymer nanostructure deposition from a heated tip","authors":"Sihan Chen, W. King","doi":"10.1116/6.0000958","DOIUrl":"https://doi.org/10.1116/6.0000958","url":null,"abstract":"This paper investigates the physical process of polymer nanostructure deposition from a heated atomic force microscope (AFM) tip and focuses on the role of capillary-driven flow on deposited feature sizes during thermal dip-pen nanolithography. We used a heated AFM tip to deposit 50–350 nm wide poly(methyl methacrylate) nanoribbons by varying tip temperature, tip speed, and polymer molecular weight. For polymers of different molecular weights, the width of the deposited polymer nanoribbons decreases with capillary number (Ca), independent of tip temperature, tip speed, and polymer molecular weight. These results indicate that the capillary-driven flow governs polymer nanostructure deposition from a heated tip. For high molecular weight polymers deposited with feature size close to the polymer radius of gyration Rg, the molecular weight also influences the size of the deposited polymer ribbon. Using scaling arguments, we show that the feature size can be predicted by Ca and Rg. Uniform and continuous deposition occurs only when Ca << 1, confirming that the polymer flow is driven by the capillary force. The results of this study enable better control of speed and resolution at which polymer nanostructures can be fabricated using AFM.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"82 1","pages":"032601"},"PeriodicalIF":1.4,"publicationDate":"2021-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84211858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Cr and CrOx etching using SF6 and O2 plasma 用SF6和O2等离子体刻蚀Cr和CrOx

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-04-07 DOI: 10.1116/6.0000922

Vy Thi Hoang Nguyen, F. Jensen, J. Hübner, E. Shkondin, R. Cork, K. Ma, P. Leussink, W. De Malsche, H. Jansen

{"title":"Cr and CrOx etching using SF6 and O2 plasma","authors":"Vy Thi Hoang Nguyen, F. Jensen, J. Hübner, E. Shkondin, R. Cork, K. Ma, P. Leussink, W. De Malsche, H. Jansen","doi":"10.1116/6.0000922","DOIUrl":"https://doi.org/10.1116/6.0000922","url":null,"abstract":"Chromium is a frequently encountered material in modern nanofabrication, directly as a functional material (e.g., photomask generation) or indirectly as a hard mask (e.g., to etch quartz). With the continuous downscaling of devices, the control of the feature size of patterned Cr and CrOx becomes increasingly important. Cr and CrOx etching is typically performed using chlorine–oxygen-based plasma chemistries, but the nanoscale imposes limitations. In this work, directional etching is demonstrated for the first time using fluorine–oxygen-based plasma. Two cases are studied to demonstrate the Cr etch performance: (i) a plasma mixture of SF6 + O2 and (ii) a switching SF6/O2 procedure in which the plasmas are used sequentially. The proposed mixture performs with Cr etch rates (ERs) up to 400 nm/min at 300 W platen power and is highest when the SF6/O2 gas ratio is ∼0.75%, i.e., almost pure O2 plasma. The profile shows reasonable directionality but the etch selectivity is low, less than 5 toward Si, due to the high generated self-bias of 420 V. The selectivity of the plasma mixture can be improved at a lower plasma power, but this is accompanied with considerable undercut. The etching of CrOx proceeds without the need for O2 in the feed, and, therefore, the ER can reach much higher values (beyond 2000 nm/min at 300 W). As the plasma mixture seems to be inadequate, a sequential process is studied with improved selectivity while preserving directionality. The high selectivity is achieved by using relatively low plasma power (to ensure a low self-bias) and the directionality is due to the time separation of the SF6 and O2 plasmas and a controlled directional removal of CrFx etch inhibiting species. Using such a switched procedure at 30 W plasma power, a selectivity beyond 20 with good profile directionality is achieved and having an etch rate of ∼1 nm per cycle (or 7 nm/min).","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"108 1","pages":"032201"},"PeriodicalIF":1.4,"publicationDate":"2021-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75945284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Apparent size effects on dopant activation in nanometer-wide Si fins 粒径对掺杂剂在纳米宽硅片中活化的影响

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-03-23 DOI: 10.1116/6.0000921

S. Folkersma, J. Bogdanowicz, P. Favia, L. Wouters, D. H. Petersen, O. Hansen, H. H. Henrichsen, Peter Former Nielsen, L. Shiv, W. Vandervorst

引用次数: 1

Optimization of photoresist plating mold fabrication for metal mask patterning 金属掩模制模用光刻胶电镀模具的优化

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-03-11 DOI: 10.1116/6.0000879

Doreen Hii, D. Vatanparvar, A. Shkel

{"title":"Optimization of photoresist plating mold fabrication for metal mask patterning","authors":"Doreen Hii, D. Vatanparvar, A. Shkel","doi":"10.1116/6.0000879","DOIUrl":"https://doi.org/10.1116/6.0000879","url":null,"abstract":"In this paper, we present results on optimization of photoresist (PR) plating molds for patterning of a nickel masking layer. The process can be adopted in a number of processes, including deep reactive ion etching of strongly bonded materials with high chemical resistance, such as fused silica (FS), borosilicate glass, and silicon carbide. The desirable plating mold attributes, such as thick PR, controlled dimension, vertical sidewall angle, and low sidewall roughness were optimized by varying exposure dose, exposure contact mode, developer dilution ratio, and PR type. We demonstrated that the PR dimensions decrease proportionally to increase of the exposure dose, where the relationship was utilized to control fabricated dimensions. To improve the sidewall angle, lowering the exposure dose was shown to reduce sidewall tapering, with further improvements possible by applying the vacuum contact exposure mode. Furthermore, we showed that by using a chemically enhanced PR, such as AZ®12XT, smooth PR sidewalls can be attained. The benefits of optimizing PR features were verified through an FS etch experiment and demonstrated a vertical etch with controlled dimension, smooth sidewall, and reduced faceting.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"10 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83659787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Temperature effects on gated silicon field emission array performance 温度对门控硅场发射阵列性能的影响

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-02-09 DOI: 10.1116/6.0000753

R. Bhattacharya, N. Karaulac, W. Chern, A. Akinwande, J. Browning

{"title":"Temperature effects on gated silicon field emission array performance","authors":"R. Bhattacharya, N. Karaulac, W. Chern, A. Akinwande, J. Browning","doi":"10.1116/6.0000753","DOIUrl":"https://doi.org/10.1116/6.0000753","url":null,"abstract":"Silicon field emitter arrays (Si FEAs) are being explored as an electron source for vacuum channel transistors for high temperature electronics. Arrays of 1000 × 1000 silicon tip based gated field emitters were studied by measuring their electrical characteristics up to 40 V of DC gate bias with a 1.3 mA emission current at different temperatures from 25 to 400 °C. At ∼350 °C, residual gas analyzer measurements show that water desorption and carbon dioxide partial pressures increase significantly, the gate to emitter leakage current decreases by more than ten times, and the collector current increases by more than ten times. These improvements remained after heat-treatment but were then lost once the device was exposed to the atmosphere for several days. The improvements could be recovered upon additional baking suggesting that adsorbates (primarily water) on the surface affected field emission and surface leakage. It was also found that after heat-treatment, the electrical characteristics of the devices exhibited <3% variation in collector current at 40 V, which (without exposure to the atmosphere) can be termed as a weak temperature dependence. These results suggest that Si FEAs could be viable as a high temperature transistor.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"32 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78274509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Numerical analysis of pattern shape deformation in UV imprint considering thermal deformation with UV shrinkage and curing 考虑UV收缩和固化热变形的UV压印图案形状变形的数值分析

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-02-05 DOI: 10.1116/6.0000817

Y. Onishi, Ryunosuke Yamashita, K. Amaya, Y. Hirai

{"title":"Numerical analysis of pattern shape deformation in UV imprint considering thermal deformation with UV shrinkage and curing","authors":"Y. Onishi, Ryunosuke Yamashita, K. Amaya, Y. Hirai","doi":"10.1116/6.0000817","DOIUrl":"https://doi.org/10.1116/6.0000817","url":null,"abstract":"A novel numerical method for analyzing the deformation of molding patterns on UV imprint with soft molds considering thermal deformation in addition to UV shrinkage and curing is presented. In the case of UV imprint using an easily deformable mold-like PDMS, transfer error on UV resin is caused by thermal expansion/contraction arising from UV reaction heat and by UV shrinkage. Specifically, when a UV resin with high reaction heat such as cation polymerization-type UV resin is used, thermal deformation has a nonnegligible effect on pattern shape deformation. Therefore, it is necessary to consider thermal deformation caused by UV reaction heat in the numerical deformation analysis of UV imprint requiring high surface accuracy, such as optical devices. The present method newly adopts the theory of reaction rate to consider the temperature-dependent UV reaction rate and introduces an advanced idea of virtual temperature as a measure of UV reaction progress. By defining the time histories of thermal deformation and UV shrinkage as a function of virtual temperature, the effects of both are considered simultaneously. In order to apply the present method to actual imprints, temperature measurement experiments and various rheometry experiments are conducted on a target UV resin to identify its model parameters. A validation analysis of the present method is performed on an actual micromirror array imprint and shows that the simulation accuracy of transfer error can be significantly improved by considering thermal deformation.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"38 1","pages":"024002"},"PeriodicalIF":1.4,"publicationDate":"2021-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84815819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Molecular beam epitaxy growth of low-bandgap material thick films using a molybdenum disilicide coated backing plate for substrate temperature control 用二硅化钼涂覆衬底温度控制的分子束外延生长低带隙材料厚膜

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-01-06 DOI: 10.1116/6.0000713

A. Podpirka, Michael C. Brupbacher, Christine M. Zgrabik, Jarod C. Gagnon, D. Shrekenhamer

引用次数: 0

Analysis of LiCoO2 electrodes through principal component analysis of current–voltage datacubes measured using atomic force microscopy 通过原子力显微镜测量电流-电压数据柱的主成分分析来分析LiCoO2电极

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-01-01 DOI: 10.1116/6.0000695

Y. Maeda, N. Taguchi, H. Sakaebe

引用次数: 3

Comparative study on the molecular beam epitaxial growth and characterization of AlGaN nanowire structures on AlN buffer layer and on Si AlN缓冲层与Si上AlGaN纳米线分子束外延生长及结构表征的比较研究

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2020-11-11 DOI: 10.1116/6.0000646

Jiaying Lu, Y. Zhong, Songrui Zhao

引用次数: 4

Postdeposition annealing effect on the reliability of atomic-layer-deposited Al2O3 films on GaN 沉积后退火对氮化镓上原子层沉积Al2O3薄膜可靠性的影响

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2020-11-01 DOI: 10.1116/6.0000531

K. Horikawa, S. Okubo, H. Kawarada, A. Hiraiwa

引用次数: 3