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27th Annual Proceedings., International Reliability Physics Symposium最新文献

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Kinetics of hot carrier effects for circuit simulation 电路模拟中的热载子效应动力学
27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36323
S. Aur
{"title":"Kinetics of hot carrier effects for circuit simulation","authors":"S. Aur","doi":"10.1109/RELPHY.1989.36323","DOIUrl":"https://doi.org/10.1109/RELPHY.1989.36323","url":null,"abstract":"Experimental results that enable the transformation of shifts in the MOS transistor model parameters obtained from DC hot carrier stress to equivalent shifts due to transient stress during circuit operation are presented. This is necessary for simulating the long-term stability of circuits with respect to hot carrier degradation. Results of further experiments and simulations designed to provide physical insight into transient hot-carrier phenomena are presented.<<ETX>>","PeriodicalId":171192,"journal":{"name":"27th Annual Proceedings., International Reliability Physics Symposium","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131323812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Effects of copper and titanium addition to aluminum interconnects on electro- and stress-migration open circuit failures 铝互连中添加铜和钛对电和应力迁移断路故障的影响
27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36345
T. Hosoda, H. Yagi, H. Tsuchikawa
{"title":"Effects of copper and titanium addition to aluminum interconnects on electro- and stress-migration open circuit failures","authors":"T. Hosoda, H. Yagi, H. Tsuchikawa","doi":"10.1109/RELPHY.1989.36345","DOIUrl":"https://doi.org/10.1109/RELPHY.1989.36345","url":null,"abstract":"Electromigration (EM) lifetimes are determined for pure Al, Al-0.1-wt.% Cu, Al-0.15-wt.% Ti, and Al-0.1-wt.% Cu-0.15-wt.% Ti as a function of the line width. The addition of 0.15-wt.% Ti improves the EM resistance, in which the lifetime increases with decreasing linewidth. The lifetimes of Al-0.1-wt.% Cu are similar to pure Al. The stress migration (SM) open failures are also evaluated. The Ti addition has a deteriorating effect on SM. The Cu addition, however, substantially improves the SM resistance. The simultaneous addition of Cu and Ti improves both EM and SM resistances.<<ETX>>","PeriodicalId":171192,"journal":{"name":"27th Annual Proceedings., International Reliability Physics Symposium","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125916854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Electrical overstress of nonencapsulated aluminum bond wires 非封装铝结合线的电气超应力
27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36336
R. King, C. V. van Schaick, J. Lusk
{"title":"Electrical overstress of nonencapsulated aluminum bond wires","authors":"R. King, C. V. van Schaick, J. Lusk","doi":"10.1109/RELPHY.1989.36336","DOIUrl":"https://doi.org/10.1109/RELPHY.1989.36336","url":null,"abstract":"Electrical overstress of nonencapsulated aluminum bond wires is studied by several methods. Time-to-failure experiments, strobe microphotography, and thermal finite-element modeling are used to examine the overstress process. Computer simulations then provide approximate solutions to a more general case. Failure analysts may use these results to estimate overstress current and duration from physical evidence.<<ETX>>","PeriodicalId":171192,"journal":{"name":"27th Annual Proceedings., International Reliability Physics Symposium","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114069413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Hot-carrier-induced latchup and trapping/detrapping phenomena 热载流子诱导的闭锁和捕获/去捕获现象
27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36330
C.M. Wang, J. Tzou, C.Y. Yang
{"title":"Hot-carrier-induced latchup and trapping/detrapping phenomena","authors":"C.M. Wang, J. Tzou, C.Y. Yang","doi":"10.1109/RELPHY.1989.36330","DOIUrl":"https://doi.org/10.1109/RELPHY.1989.36330","url":null,"abstract":"Two phenomena due to hot carriers in CMOS are investigated. One is latchup induced by high drain voltage. The results show that the triggering drain voltage decreases with decreasing channel length. The other is detrapping of trapped carriers during a relax cycle subsequent to DC voltage stressing. The results show that the degradation and recovery kinetics follow similar power laws and correspond to carrier trapping and detrapping, respectively.<<ETX>>","PeriodicalId":171192,"journal":{"name":"27th Annual Proceedings., International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133274728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An investigation of the time dependence of current degradation in MOS devices MOS器件中电流退化的时间依赖性研究
27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36329
R. Rakkhit, M. Peckerar, C. Yao
{"title":"An investigation of the time dependence of current degradation in MOS devices","authors":"R. Rakkhit, M. Peckerar, C. Yao","doi":"10.1109/RELPHY.1989.36329","DOIUrl":"https://doi.org/10.1109/RELPHY.1989.36329","url":null,"abstract":"A perturbation technique is used to solve the time-dependent transport equations, giving an accurate picture of the time dependence of hot-carrier-induced degradation in submicrometer MOS devices. The growth of the spatial distribution of both the interface-generated traps and the oxide-trapped charges are incorporated in a two-dimensional model using the effective electron temperature calculations. The calculations and the measurements show a self-limiting behavior of the degradation process.<<ETX>>","PeriodicalId":171192,"journal":{"name":"27th Annual Proceedings., International Reliability Physics Symposium","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128219805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs 深亚微米mosfet中的低压热电子流和退化
27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36324
J. Chung, M. Jeng, J. Moon, P. Ko, C. Hu
{"title":"Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs","authors":"J. Chung, M. Jeng, J. Moon, P. Ko, C. Hu","doi":"10.1109/RELPHY.1989.36324","DOIUrl":"https://doi.org/10.1109/RELPHY.1989.36324","url":null,"abstract":"Hot-electron degradation in deep-submicrometer MOSFETs at 3.3 V and below is studied. Using a device with L/sub eff/=0.1 mu m and T/sub ox/=75 AA, substrate current is measured at a drain bias as low as 0.7 V; gate current is measured at a drain bias as low as 1.75 V. Using the charge-pumping technique, hot-electron degradation is also observed at drain biases as low as 1.8 V. These voltages are believed to be the lowest reported values for which hot-electron currents and degradation have been directly observed. These low-voltage hot-electron phenomena exhibit similar behavior to hot-electron effects present at higher biases and longer channel lengths. No critical voltage for hot-electron effects (such as the Si-SiO/sub 2/ barrier height) is apparent. Established hot-electron degradation concepts and models are shown to be applicable in the low-voltage deep submicrometer regime. Using these established models, the maximum allowable power-supply voltage to insure a 10-yr device lifetime without using LDD (lightly doped drains) is determined as a function of channel length (down to 0.1 mu m) and oxide thickness.<<ETX>>","PeriodicalId":171192,"journal":{"name":"27th Annual Proceedings., International Reliability Physics Symposium","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117271660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 103
Improved EPROM moisture performance using spin-on-glass (SOG) for passivation planarization 利用玻璃自旋(SOG)进行钝化平面化，提高了EPROM的防潮性能
27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36332
I.S. Gaeta, K. Wu
{"title":"Improved EPROM moisture performance using spin-on-glass (SOG) for passivation planarization","authors":"I.S. Gaeta, K. Wu","doi":"10.1109/RELPHY.1989.36332","DOIUrl":"https://doi.org/10.1109/RELPHY.1989.36332","url":null,"abstract":"Plastic-encapsulated EPROM (erasable programmable read-only memory) moisture reliability is contingent on good passivation integrity. Step coverage of passivation becomes an issue when array metal pitch is reduced in high-density EPROMs. Planarizing the passivation with an intermediate spin-on-glass layer is shown to reduce the long-term stress failure rate by a factor of three and thus to improve EPROM performance in moisture.<<ETX>>","PeriodicalId":171192,"journal":{"name":"27th Annual Proceedings., International Reliability Physics Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127507327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A reliability study of Au-Sn eutectic binding with Ga-As dice Au-Sn共晶结合Ga-As晶片的可靠性研究
27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36335
G. Matijasevic, C.C. Lee
{"title":"A reliability study of Au-Sn eutectic binding with Ga-As dice","authors":"G. Matijasevic, C.C. Lee","doi":"10.1109/RELPHY.1989.36335","DOIUrl":"https://doi.org/10.1109/RELPHY.1989.36335","url":null,"abstract":"GaAs test dice successfully bonded on alumina substrates using Au-Sn eutectic alloy with static pressure but without scrubbing are discussed. A scanning acoustic microscope (SAM) having a spatial resolution of 25 mu m was used to examine the quality of the bondings. Nearly perfect bondings have been achieved consistently. After 100 cycles of thermal shock between -196 degrees and +160 degrees C, good specimens remain well bonded without die cracking, as confirmed by the SAM images. Specimens with voids near the edge of the dice incur vertical die cracking due to the concentrated stress at the voids. Shear tests have also been performed and 95% of the specimens tested passed the MIL-STD-883C test. The resulting shear strength correlates perfectly with the quality of the bondings determined by the SAM images.<<ETX>>","PeriodicalId":171192,"journal":{"name":"27th Annual Proceedings., International Reliability Physics Symposium","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125620838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
The properties of Al-Cu/Ti films sputter deposited at elevated temperatures and high DC bias 高温高直流偏压下溅射沉积Al-Cu/Ti薄膜的性能
27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36347
T. Hariu, K. Watanabe, M. Inoue, T. Takada, H. Tsuchikawa
{"title":"The properties of Al-Cu/Ti films sputter deposited at elevated temperatures and high DC bias","authors":"T. Hariu, K. Watanabe, M. Inoue, T. Takada, H. Tsuchikawa","doi":"10.1109/RELPHY.1989.36347","DOIUrl":"https://doi.org/10.1109/RELPHY.1989.36347","url":null,"abstract":"Bias sputtering is an effective method for improvement of step coverage. However, the electromigration lifetime of bias-sputtered Al films is inferior to unbiased film. The lifetime of Al-Cu(2-wt.%)/Ti layered films is improved when Al-Cu layer is deposited at high temperature (500 degrees C) and with substrate bias (-600 V). Here, the influence of the substrate temperature and bias lifetimes is studied and the effect of the impinged Ar atoms on the Al-Cu film lifetimes is discussed.<<ETX>>","PeriodicalId":171192,"journal":{"name":"27th Annual Proceedings., International Reliability Physics Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132715200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Electromigration of ionized cluster beam deposited aluminum metallizations 电离束沉积铝金属化层的电迁移
27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36346
R. Hummel
{"title":"Electromigration of ionized cluster beam deposited aluminum metallizations","authors":"R. Hummel","doi":"10.1109/RELPHY.1989.36346","DOIUrl":"https://doi.org/10.1109/RELPHY.1989.36346","url":null,"abstract":"The activation energy of electromigration for ionized-cluster-beam-deposited aluminum films on 7000-AA-thick SiO/sub 2/ was found to be 1.1 eV compared to 0.5 eV, for conventionally deposited aluminum films. Aluminum films on oxide-free silicon did not show any hole formation or resistance increase during DC stressing.<<ETX>>","PeriodicalId":171192,"journal":{"name":"27th Annual Proceedings., International Reliability Physics Symposium","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131147135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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