27th Annual Proceedings., International Reliability Physics Symposium最新文献

Hot carrier degradation in p-channel MOSFETs p沟道mosfet的热载流子退化

27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36325

S.W. Mittle, M. Hargrove

{"title":"Hot carrier degradation in p-channel MOSFETs","authors":"S.W. Mittle, M. Hargrove","doi":"10.1109/RELPHY.1989.36325","DOIUrl":"https://doi.org/10.1109/RELPHY.1989.36325","url":null,"abstract":"The impact of scaling device channel length and thinning gate oxide for improved performance, and the effect of the gate conductor material and spacer process on p-channel hot-carrier degradation are described. p-channel devices with n/sup +/ polysilicon and WSi/sub 2/ (polycide) gates, with 100-AA and 150-AA gate oxides, and channel lengths ranging from 0.5 mu m to 1.3 mu m were stressed at V/sub ds/=-5.0 to -6.0 V and room temperature for 1000 s. Positive shifts in threshold voltage as well as increased saturation drain current and transconductance are observed after stress. The degradation in device characteristics of a 1.0- mu m device, biased over a range of voltage conditions, was found to be related to the measured gate current by a power-law dependence. As the device channel length is decreased, the observed degradation in threshold voltage increased exponentially. However, as the device gate oxide thickness is reduced, the threshold voltage degradation remained constant for a given bias and fixed channel length, even though the gate current increases significantly. Device degradation is also a strong function of the gate conductor material and the spacer dimension on the sidewall of the gate conductor.<<ETX>>","PeriodicalId":171192,"journal":{"name":"27th Annual Proceedings., International Reliability Physics Symposium","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122054342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Hot-carrier induced instability of 0.5 mu m CMOS devices patterned using synchrotron X-ray lithography 热载流子诱导的0.5 μ m CMOS器件的不稳定性使用同步加速器x射线光刻

27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36343

C. Hsu, L.K. Wang, J. Sun, M. Wordeman, T. Ning

{"title":"Hot-carrier induced instability of 0.5 mu m CMOS devices patterned using synchrotron X-ray lithography","authors":"C. Hsu, L.K. Wang, J. Sun, M. Wordeman, T. Ning","doi":"10.1109/RELPHY.1989.36343","DOIUrl":"https://doi.org/10.1109/RELPHY.1989.36343","url":null,"abstract":"The device characteristics and the radiation damage of n-channel and p-channel MOSFETs patterned using synchrotron X-ray lithography are examined. The effect of radiation damage caused by X-ray lithography on the device reliability during hot electron injection is investigated. Large amounts of positive oxide charge, neutral traps, and acceptor-like interface states are created by X-ray irradiation during the lithography process. Although several annealing steps are performed throughout the entire fabrication process, the radiation damage, particularly neutron traps, is not completely annealed out. The hot-electron-induced instability in p-channel MOSFETs is significantly increased due to the enhanced electron trapping in the oxide by residual traps. The effect of radiation on hot-electron-induced instability is found to be more severe in n/sup +/-poly buried-channel n-MOSFETs than in p/sup +/-poly surface-channel p-MOSFETs. However, the degradation in n-channel MOSFETs due to channel hot carriers is not significantly increased by X-ray lithography since the n-channel MOSFETs hot-carrier-induced degradation is dominated by interface state generation instead of electron trapping. These results suggest that p-channel MOSFETs, in addition to n-channel MOSFETs, need to be carefully examined in terms of hot-carrier-induced instability in CMOS VLSI circuits patterned using X-ray lithography.<<ETX>>","PeriodicalId":171192,"journal":{"name":"27th Annual Proceedings., International Reliability Physics Symposium","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131959717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

On-chip measurement of package related metal shift using an integrated silicon sensor 使用集成硅传感器对封装相关金属位移进行片上测量

27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36333

A. Bossche

引用次数: 5

Electromigration interconnect lifetime under AC and pulse DC stress 交流和脉冲直流应力下的电迁移互连寿命

27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36348

B. Liew, N. Cheung, C. Hu

引用次数: 57

Interface state generation due to electron tunneling into thin oxides 由于电子隧穿进入薄氧化物而产生的界面态

27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36312

Y. Ozawa, M. Iwase, A. Toriumi

引用次数: 3

HAST applications: acceleration factors and results for VLSI components HAST应用:VLSI元件的加速因子和结果

27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36331

D. Danielson, G. Marcyk, E. Babb, S. Kudva

引用次数: 17

Aging effects in GaAs Schottky barrier diodes 砷化镓肖特基势垒二极管的老化效应

27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36319

K. Christianson

引用次数: 4

Extensions of the effective thickness theory of oxide breakdown 氧化物击穿有效厚度理论的扩展

27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36315

D. J. Coleman, W. Hunter, G. Brown, I. Chen

引用次数: 8

The effects of minute impurities (H, OH, F) on the SiO/sub 2//Si interface investigated by nuclear resonant reaction and electron spin resonance 用核共振反应和电子自旋共振研究了微量杂质(H, OH, F)对SiO/sub /Si界面的影响

27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36322

Y. Ohji, Y. Nishioka, K. Yokogawa, K. Mukai, Q. Qiu, E. Arai, T. Sugano

{"title":"The effects of minute impurities (H, OH, F) on the SiO/sub 2//Si interface investigated by nuclear resonant reaction and electron spin resonance","authors":"Y. Ohji, Y. Nishioka, K. Yokogawa, K. Mukai, Q. Qiu, E. Arai, T. Sugano","doi":"10.1109/RELPHY.1989.36322","DOIUrl":"https://doi.org/10.1109/RELPHY.1989.36322","url":null,"abstract":"The effects of minute amounts of impurities (H, OH, and F) in SiO/sub 2/ are investigated to obtain a guideline for improving the reliability of MOS devices. To examine the behavior of hydrogen, deuterium (D) is adopted as a tracer. The quantity of deuterium dissolved in SiO/sub 2/ is measured by the D(/sup 3/He,p)/sup 4/He nuclear resonant reaction (NRR) technique. The SiO/sub 2//Si interface structure is examined by electron spin resonance (ESR) measurement. Hot-carrier injection with MOS capacitors and transistors are examined to determine the effects of minute impurities on the electrical characteristics of gate SiO/sub 2/ and the correlation of this effect with the NRR and ESR experimental results. Significant amounts of D/sub 2/O are dissolved into SiO/sub 2/, even at 200 degrees C, and the dissolved D/sub 2/O is eliminated at temperatures above 700 degrees C. The disappearance of the interface traps at temperatures higher than 800 degrees C is thought to be due to the viscous flow of SiO/sub 2/ or due to the interface reoxidation, since in both cases the interface strain is relaxed. Reduced hydrogen concentration and relaxation of the interface strain are essential for improving the MOS device endurance against hot carriers.<<ETX>>","PeriodicalId":171192,"journal":{"name":"27th Annual Proceedings., International Reliability Physics Symposium","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125588149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 36

Fatigue mechanisms in thin film potassium nitrate memory devices 薄膜硝酸钾记忆装置的疲劳机理

27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI: 10.1109/RELPHY.1989.36340

A. Kulkarni, G. Rohrer, L. Mcmillan, S.E. Adams

引用次数: 1