Hot-carrier-induced latchup and trapping/detrapping phenomena

27th Annual Proceedings., International Reliability Physics Symposium Pub Date : 1989-04-11 DOI:10.1109/RELPHY.1989.36330

C.M. Wang, J. Tzou, C.Y. Yang

引用次数: 2

Abstract

Two phenomena due to hot carriers in CMOS are investigated. One is latchup induced by high drain voltage. The results show that the triggering drain voltage decreases with decreasing channel length. The other is detrapping of trapped carriers during a relax cycle subsequent to DC voltage stressing. The results show that the degradation and recovery kinetics follow similar power laws and correspond to carrier trapping and detrapping, respectively.<>

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热载流子诱导的闭锁和捕获/去捕获现象

研究了CMOS中热载流子的两种现象。一是高漏极电压引起的闭锁。结果表明，触发漏极电压随通道长度的减小而减小。另一种是在直流电压应力后的松弛周期中去除被困载流子。结果表明，降解和恢复动力学遵循相似的幂律，分别对应于载流子捕获和去捕获。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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