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PDMS micropillars for C. elegans force measurement 用于秀丽隐杆线虫力测量的PDMS微柱
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573578
S. Johari, V. Nock, W. Wang
{"title":"PDMS micropillars for C. elegans force measurement","authors":"S. Johari, V. Nock, W. Wang","doi":"10.1109/SMELEC.2016.7573578","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573578","url":null,"abstract":"This paper reports on the fabrication of PDMS micropillars as force sensor for C. elegans locomotion measurement. Three different designs have been fabricated; starting from a channel like design with two parallel rows, to increasing the number of micropillar rows in Design 2, and finally a 9 × 9 mm square chamber with multiple arrays of PDMS pillars arranged in a lattice and honeycomb structure. Results of worm locomotion forces show that different parts of the worm's body exert forces on five individual pillars that were in contact with the worm throughout its movement. The fabrication process of the PDMS device is also explained in detail, along with the device casting procedures. The final section discusses the challenges and limitations tackled in this research, in particular during the fabrication process.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129611079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optimization of gold thin films thicknesses in enhancing SPR response 优化金薄膜厚度提高SPR响应
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573637
N. F. Murat, W. M. Mukhtar, A. Rashid, K. A. Dasuki, A. A. R. A. Yussuf
{"title":"Optimization of gold thin films thicknesses in enhancing SPR response","authors":"N. F. Murat, W. M. Mukhtar, A. Rashid, K. A. Dasuki, A. A. R. A. Yussuf","doi":"10.1109/SMELEC.2016.7573637","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573637","url":null,"abstract":"Nowadays, surface plasmon resonance (SPR) sensor has been widely used in biosensing applications to detect the wide diversity of biomolecular interactions. There are few parameters need to be concerned in order to optimize the performance of SPR sensors such as film thicknesses, type of thin films and their configurations. In this study, we seek to determine the optimum thicknesses of hybrid thin films which consist of gold-graphene oxide layers for the enhancement of SPR sensor sensitivity. By using a theoretical approach, a WINSPALL 3.02 simulator had been used to investigate the effects of various thicknesses of hybrid configuration's thin films towards the excitation of surface plasmon polaritons (SPP). A layer of 3 nm protein was added to compare the maximum adsorption of the SPR sensor based on their configuration. It was found that the optimum thicknesses of gold and graphene oxide are 50 nm and 0.68 nm respectively for achieving best sensitivity. Thus, the sensitivity value for gold-GO thin films is higher than silver-GO which are 19.42 °/RIU and 5.45 °/RIU with FWHM = 2.28° and 0.64° respectively.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124550089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Solid-fluid interaction in a pillar-based phononic crystal 柱状声子晶体中的固-流相互作用
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573587
M. F. Mohd Razip Wee, K. Siow, A. Zain, M. Addouche, A. Khelif
{"title":"Solid-fluid interaction in a pillar-based phononic crystal","authors":"M. F. Mohd Razip Wee, K. Siow, A. Zain, M. Addouche, A. Khelif","doi":"10.1109/SMELEC.2016.7573587","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573587","url":null,"abstract":"In this paper, we investigate the wave dispersion of two dimensional pillar-based phononic crystal surrounded in liquid medium. An unit cell structure with reduced pillar height (hp/a)=0.5 and reduced radius (rp/a)=0.3 is simulated using Finite Element Method. The geometrical parameter is chosen to demonstrate a local resonance mechanism that allow the confinement of elastic energy at the interface between the solid and the fluid. In order to identify the energy distribution, we represent the eigenmode at high symmetry (point X) in the first Brillouin zone. The decreasing trend of frequency is also boosted with the increase of pillar height. From the total displacement, the energy is mostly located inside the pillar and only a small value of displacement is present in the substrate. The results from this study could be useful for microfluidic and lab on chip application. We believe that the integration of pillar based phononic crystal with microfluidic could become a powerful tool in the sensor and actuator application for chemical and biological application.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127256590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analyze of threshold voltage in SOI PMOSFET device using Taguchi method 用田口法分析SOI PMOSFET器件的阈值电压
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573600
M. Aziz, F. Salehuddin, A. Zain, K. Kaharudin, H. Hazura, S. Idris, A. R. Hanim, Z. Manap
{"title":"Analyze of threshold voltage in SOI PMOSFET device using Taguchi method","authors":"M. Aziz, F. Salehuddin, A. Zain, K. Kaharudin, H. Hazura, S. Idris, A. R. Hanim, Z. Manap","doi":"10.1109/SMELEC.2016.7573600","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573600","url":null,"abstract":"The short-channel effect (SCE) is the main problem of many metal-oxide-semiconductor field-effect transistor (MOSFET) industries. A lot of studies addressing the SCE effect have been conducted. One of the methods used for this is called SOI (silicon-on-insulator) technology. This method has been proven to effectively reduce the SCE effect. In this research paper, the electrical characteristic of an 18 nm gate length SOI PMOSFET was analyzed based on the prediction of the International Technology Roadmap for Semiconductors (ITRS). The threshold voltage would be the key characteristic in this research. Four process parameters were used with two noise factors in order to conduct nine sets of experiments using the L9 orthogonal array Taguchi method. At the end of the experiment, the best setting that was predicted by the Taguchi method would be utilized for the purpose of verification. The result shows that VTH after the optimization approach is closer to the nominal value (-0.533V), that is, within the appropriate range of ITRS 2013.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131968460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Influence of discharge power on the intensities of Ar and Ti in high-pressure magnetron sputtering plasma measured using optical emission spectroscopy 放电功率对发射光谱法测量高压磁控溅射等离子体中Ar和Ti强度的影响
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573635
Soo Ren How, N. Nayan, J. Lias
{"title":"Influence of discharge power on the intensities of Ar and Ti in high-pressure magnetron sputtering plasma measured using optical emission spectroscopy","authors":"Soo Ren How, N. Nayan, J. Lias","doi":"10.1109/SMELEC.2016.7573635","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573635","url":null,"abstract":"In this study, a high-pressure magnetron sputtering plasma was used for plasma discharge with various discharge powers in the mixture of argon-nitrogen discharge. The introduction of nitrogen gas modifies the discharge leading to modifications of plasma parameters and ionization mechanism of transition species. The observation of relative emission of argon and titanium spectral line was using an optical emission spectrometer. The ratio of each species of argon and titanium was plotted and the trend of ionization mechanism was studied. We found that the Ar ion emission intensity increased with the discharge power indicating that the ionization of Ar increased with the discharge power. In addition, the ratio of Ti atom / Ti ion emission intensity increased with the discharge power. The results indicated that the Ti atom increased with the discharge power whereas the increase of Ti ion were not significant.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124336841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Straight Bridge Beams with Centered Diaphragm (SBBCD) design for MEMS cochlear biomodel MEMS耳蜗生物模型的中心膜片直桥梁设计
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573579
Thailis Bounya Ngelayang, B. Majlis, R. Latif
{"title":"Straight Bridge Beams with Centered Diaphragm (SBBCD) design for MEMS cochlear biomodel","authors":"Thailis Bounya Ngelayang, B. Majlis, R. Latif","doi":"10.1109/SMELEC.2016.7573579","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573579","url":null,"abstract":"This paper presents the development of an artificial basilar membrane (ABM) in order to biologically mimic the performance of a cochlea in human auditory system. The developed ABM should operate in an audible frequency range of a normal human ear which is in between 20 Hz to 20000 Hz. Two microelectromechanical system (MEMS) cochlear biomodel design; Straight Bridge Beams (SBB) and Straight Bridge Beams with Centered Diaphragm (SBBCD), have been considered for ABM development. Comsol Multiphysics software is used to design ABM and simulate their performance in terms of resonant frequency and static capacitance. SBB MEMS cochlear biomodel was designed with the dimension of 0.5 μm thickness, 20 μm width and in a range of 275 μm to 7700 μm length. As for SBBCD MEMS cochlear biomodel, an additional circular diaphragm with a diameter size of 75 μm is introduced to the center of the beam length. The SBBCD MEMS cochlear biomodel gave better performance with 2.84 % - 49.47 % of resonant frequency reduction and 9.44 % - 141.95 % of static capacitance increment in comparison with SBB MEMS cochlear biomodel.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114314795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of Polymer Triple Coupler Ring Resonators for add/ drop optical filters 加/降滤光器用聚合物三耦合器环形谐振器的设计
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573641
D. Mahmudin, T. T. Estu, G. Sugandi, A. A. Fathnan, P. Daud, Y. N. Wijayanto, A. M. Md Zain, P. Menon, S. Shaari
{"title":"Design of Polymer Triple Coupler Ring Resonators for add/ drop optical filters","authors":"D. Mahmudin, T. T. Estu, G. Sugandi, A. A. Fathnan, P. Daud, Y. N. Wijayanto, A. M. Md Zain, P. Menon, S. Shaari","doi":"10.1109/SMELEC.2016.7573641","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573641","url":null,"abstract":"Optical filter is very important components in WDM network. MRR is a basic structure to design the optical filter because of easy to design for improving its performance. This paper discusses an innovative structure of the MRR, which is Polymer Triple Coupler Ring Resonators (PTCRR) for optical filter applications. Values of width between bus and ring and values of radius of the ring in the structure PTCRR were analyzed and optimized for several variations for obtaining coupling coefficient values. Therefore, wide Free Spectral Range (FSR) and high crosstalk suppression bandwidth can be obtained. As results, at the optimized width of gap of 100 nm and the optimized radiation of 8 μm, FSR of 2.85 THz and crosstalk suppression bandwidth of 60 GHz were achieved. Based on the results, this structure can be used for filtering optical signals in optical fiber communication.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114549624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance prediction of Graphene Nanoscroll and Carbon Nanotube transistors 石墨烯纳米卷和碳纳米管晶体管的性能预测
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573613
A. Hamzah, R. Ismail
{"title":"Performance prediction of Graphene Nanoscroll and Carbon Nanotube transistors","authors":"A. Hamzah, R. Ismail","doi":"10.1109/SMELEC.2016.7573613","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573613","url":null,"abstract":"The CNT has been the counterpart to the GNS due to their long tubular structure as both exhibit practically similar 1D carrier transport and expected to have MOSFET-like behaviour. Therefore, it is crucial to distinguish the distinct features between those two structures. The performance was assessed at full potential by assuming that both devices exhibit a perfect ohmic contact and operated in quantum conductance limit. The gate capacitance of GNSFET was found to be slightly lower than the CNTFET since both structures applied the same concept of electrostatic capacitance. But Simulation results indicate that GNSFET can produce comparable performances as the CNTFET.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114656060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics InAs光电二极管的电场分布和暗电流特性建模与仿真
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573623
P. S. Akma Roslan, P. J. Ker, I. Ahmad, J. Pasupuleti, P. Z. Fam
{"title":"Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics","authors":"P. S. Akma Roslan, P. J. Ker, I. Ahmad, J. Pasupuleti, P. Z. Fam","doi":"10.1109/SMELEC.2016.7573623","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573623","url":null,"abstract":"This work reports the dark current density-voltage (J-V) characteristics and electric field profile of InAs photodiode with 100μm × 1μm cross sectional area at a temperature of 300K. The device structure was simulated using 2D SILVACO software and the model was used to determine all the optimum material physical parameters based on the parameters reported in other literatures. Dark current mechanisms, which include drift-diffusion current, generation-recombination current, trap-assisted tunneling current and band-to-band tunneling current, were incorporated into the ATLAS electrical characteristics model. Simulated dark current results were compared with the experimental results that were obtained from InAs photodiodes fabricated from molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) grown InAs wafers. Good agreement is found between the simulation and experimental results.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123434250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Performance analysis of CMOS-memristor hybrid ring oscillator Physically Unclonable Function (RO-PUF) cmos -忆阻器混合环形振荡器的物理不可克隆功能(RO-PUF)性能分析
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573652
Julius Teo Han Loong, Noor Alia Nor Hashim, M. Hamid, F. A. Hamid
{"title":"Performance analysis of CMOS-memristor hybrid ring oscillator Physically Unclonable Function (RO-PUF)","authors":"Julius Teo Han Loong, Noor Alia Nor Hashim, M. Hamid, F. A. Hamid","doi":"10.1109/SMELEC.2016.7573652","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573652","url":null,"abstract":"The memristor is the fourth fundamental passive circuit element, whereas the Physically Unclonable Function (PUF) is a relatively new hardware-based security primitive. PUFs are unclonable due to manufacturing process variations Thus, PUFs are said to have a fingerprint that is unique to each PUF which can be used for security purposes. In this paper, the memristor is applied into a PUF, where a CMOS-memristor hybrid ring oscillator PUF (RO-PUF) is introduced. The proposed RO-PUF circuit is analyzed in terms of uniqueness, uniformity, and bit-aliasing, which were found to be 48.57%, 51.43%, and 51.43%, respectively. The performance metrics results were close to the ideal value of 50%, indicating that the proposed PUF functions well. In future research, this CMOS-memristor RO-PUF is to be used in many hardware security applications and protocols.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124798938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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