Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics

P. S. Akma Roslan, P. J. Ker, I. Ahmad, J. Pasupuleti, P. Z. Fam
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引用次数: 4

Abstract

This work reports the dark current density-voltage (J-V) characteristics and electric field profile of InAs photodiode with 100μm × 1μm cross sectional area at a temperature of 300K. The device structure was simulated using 2D SILVACO software and the model was used to determine all the optimum material physical parameters based on the parameters reported in other literatures. Dark current mechanisms, which include drift-diffusion current, generation-recombination current, trap-assisted tunneling current and band-to-band tunneling current, were incorporated into the ATLAS electrical characteristics model. Simulated dark current results were compared with the experimental results that were obtained from InAs photodiodes fabricated from molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) grown InAs wafers. Good agreement is found between the simulation and experimental results.
InAs光电二极管的电场分布和暗电流特性建模与仿真
本文报道了横截面为100μm × 1μm的InAs光电二极管在300K温度下的暗电流密度-电压(J-V)特性和电场分布。利用2D SILVACO软件对器件结构进行仿真,并根据其他文献报道的参数,利用该模型确定所有最优材料物理参数。暗电流机制,包括漂移-扩散电流、产生-复合电流、陷阱辅助隧道电流和带间隧道电流,被纳入ATLAS电特性模型。模拟暗电流结果与分子束外延(MBE)和金属有机气相外延(MOVPE)制备的InAs光电二极管的实验结果进行了比较。仿真结果与实验结果吻合较好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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