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Hybrid perovskites: Approaches towards light-emitting devices 混合钙钛矿:发光器件的方法
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-10-06 DOI: 10.1109/SMELEC.2016.7573638
M. Alias, I. Dursun, D. Priante, M. Saidaminov, T. Ng, O. Bakr, B. Ooi
{"title":"Hybrid perovskites: Approaches towards light-emitting devices","authors":"M. Alias, I. Dursun, D. Priante, M. Saidaminov, T. Ng, O. Bakr, B. Ooi","doi":"10.1109/SMELEC.2016.7573638","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573638","url":null,"abstract":"The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted extensive research for photonic device applications. Using the bromide halide as an example, we present key approaches of our work towards realizing efficient perovskites based light-emitters. The approaches involved determination of optical constants for the hybrid perovskites thin films, fabrication of photonic nanostructures in the form of subwavelength grating reflector patterned directly on the hybrid perovskites as light manipulation layer, and enhancing the emission property of the hybrid perovskites by using microcavity structure. Our results provide a platform for realization of hybrid perovskites based light-emitting devices for solid-state lighting and display applications.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114790121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and realisation of a turbidimeter using TSL250 photodetector and Arduino microcontroller 基于TSL250光电探测器和Arduino微控制器的浊度计设计与实现
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-09-22 DOI: 10.1109/SMELEC.2016.7573657
G. Wiranto, I. Hermida, A. Fatah, Waslaluddin
{"title":"Design and realisation of a turbidimeter using TSL250 photodetector and Arduino microcontroller","authors":"G. Wiranto, I. Hermida, A. Fatah, Waslaluddin","doi":"10.1109/SMELEC.2016.7573657","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573657","url":null,"abstract":"In this research it has been developed a turbidimeter using TSL250 photodetector and 650 nm laser light source. The method used was based on nephelometric principle with the photodetector positioned at 90o angle against the incident light from the laser source. Light intensity changes due to particles in the liquid were converted into voltage, and an Arduino microcontroller was then used to convert the measured voltage into the standart turbidity measurement unit (NTU) and displayed the results on an LCD. The system has been tested against a commercial turbidimeter, and the results showed an average accuracy of 98.7%, and good precision over 25 series of measurement and 5 day measurement cycle. The ideal measurement range of the developed system was from 10 - 150 NTU, with the smallest measurable value (resolution) of 0.17 NTU. The turbidimeter was expected to be applied in an online water quality monitoring system.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133478908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
The effect of tracking generator efficiency to overall RF power amplifier system efficiency 跟踪发生器效率对射频功率放大器系统整体效率的影响
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-09-22 DOI: 10.1109/SMELEC.2016.7573662
Z. Yusoff, Fatahiyah Mohd Annuar, F. Kung, S. Hashim, J. Lees, S. Cripps
{"title":"The effect of tracking generator efficiency to overall RF power amplifier system efficiency","authors":"Z. Yusoff, Fatahiyah Mohd Annuar, F. Kung, S. Hashim, J. Lees, S. Cripps","doi":"10.1109/SMELEC.2016.7573662","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573662","url":null,"abstract":"This paper presents efficiency performance findings of RF power amplifier (RFPA) systems from a comparative study between an RFPA with a conventional envelope tracking (ET) system, an RFPA with an auxiliary envelope tracking (AET) system and an RFPA with a fixed bias supply. The results demonstrated that the tracking generator's design in AET system has less dependency towards the overall system efficiency and this relaxed the requirement of the tracking generator's design. This AET RFPA system shows large improvement in efficiency as compared to fixed supply and conventional ET system also suggests that AET system has potential to be the preferred technique in efficiency improvement.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133174525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Measurements of absolute Cu, Zn and Sn metastable densities in CZTS sputtering plasmas measured using UVAS technique 用UVAS技术测量CZTS溅射等离子体中Cu、Zn和Sn的绝对亚稳密度
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-09-22 DOI: 10.1109/SMELEC.2016.7573639
N. Nafarizal, K. Sasaki
{"title":"Measurements of absolute Cu, Zn and Sn metastable densities in CZTS sputtering plasmas measured using UVAS technique","authors":"N. Nafarizal, K. Sasaki","doi":"10.1109/SMELEC.2016.7573639","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573639","url":null,"abstract":"In the present study, absolute density of Cu, Zn, and Sn metastable in the discharge phase of magnetron sputtering plasma were evaluated experimentally. Magnetron sputtering plasma system using stoichiometric Cu2ZnSnS4 compound target was produced with pulsed-modulated rf 13.56 MHz power supply. Then, the temporal evolution of atomic metastable density in the afterglow was measured using ultraviolet absorption spectroscopy techniques with hollow cathode lamp (HCL) as light source. The absorption signal decreased very rapidly after the termination of discharge power, indicating that the metastable density decreased rapidly in the afterglow. Therefore, the absolute Cu, Zn, and Sn metastable atom densities in the discharge phase were evaluated just after the termination of rf power. It has been observed that the absolute Cu, Zn, and Sn metastable atom densities in the gas phase were not in agreement with the stoichiometric composition of sputter target and deposited films. In addition, the characteristic of metastable atom densities was consistent with the ground state atom densities. The results suggest a possibility of unconventional sputtering process for compound sputter deposition.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123220280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photonic crystal (PhC) nanowires for infrared photodetectors 红外探测器用光子晶体纳米线
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-09-22 DOI: 10.1109/SMELEC.2016.7573614
Mohd Nuriman Nawi, Nurulhani Diana Rashid, D. Berhanuddin, A. Zain, B. Majlis, M. Mahdi
{"title":"Photonic crystal (PhC) nanowires for infrared photodetectors","authors":"Mohd Nuriman Nawi, Nurulhani Diana Rashid, D. Berhanuddin, A. Zain, B. Majlis, M. Mahdi","doi":"10.1109/SMELEC.2016.7573614","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573614","url":null,"abstract":"We report the Photonic Crystal (PhC) nanowires performance for potential phototodetectors integration application. The refractive index of PhC can be tailored to guide specific resonance wavelength precisely. This paper presents the numerical approach of 1D PhC with 12 periodic holes to observe the range of stop band acquired, transmission and the quality factor of the resonance wavelengths. By splitting the holes equally with a range of cavities from 440 to 450 nm, the stop band observed are between 1.5 to 2.1 μm. By varying the cavity length, the value of resonance wavelengths and quality factors observed have also changed. The introduction of 442 nm cavity shows the highest transmission but the lowest Quality factor (Q-factor) where both are observed at 0.87 and 284 respectively. The values indicate a good confinement of light in the waveguide designed thus enabling wavelength selectivity for photodetectors application in highly sensitive wavelength selection application.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115644746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of microchannel sizes on 3D hydrodynamic focusing of a microflow cytometer 微通道尺寸对微流式细胞仪三维流体动力聚焦的影响
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-09-22 DOI: 10.1109/SMELEC.2016.7573603
N. Selamat, Muhammad Syafiq Bin Rahim, A. Ehsan
{"title":"Effect of microchannel sizes on 3D hydrodynamic focusing of a microflow cytometer","authors":"N. Selamat, Muhammad Syafiq Bin Rahim, A. Ehsan","doi":"10.1109/SMELEC.2016.7573603","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573603","url":null,"abstract":"Hydrodynamic focusing is an important method used in microfluidics cell sorting devices. A design of flow cytometer has been developed and simulated using COMSOL Multyphysics software. The device is capable of creating a self-aligned stream by manipulating the flow rate, Q in both sheath channel. The objective of this research is to study the effect of channel size variation on the fluid flow in the micro flow cytometer device. The flow rate ratio Qs/Qi is applied in order find the best flow rate ratio value between sheath channel and sample channel. Simulated results showed that when Qs is smaller than Qi, the stream size is bigger and the length of the stream is longer. However, Qs is equal to Qi, the stream becomes smaller and the length of the stream is shorter. Similary, when Qs is bigger than Qi, the stream becomes smaller and shorter. The results showed that fluid flow is better when the size of the channel is bigger.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121445557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Sensitivity and selectivity of metal oxides based sensor towards detection of formaldehyde 金属氧化物传感器对甲醛检测的灵敏度和选择性
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-09-22 DOI: 10.1109/SMELEC.2016.7573654
M. Zaki, U. Hashim, M. K. Md Arshad, M. Nasir, A. R. Ruslinda
{"title":"Sensitivity and selectivity of metal oxides based sensor towards detection of formaldehyde","authors":"M. Zaki, U. Hashim, M. K. Md Arshad, M. Nasir, A. R. Ruslinda","doi":"10.1109/SMELEC.2016.7573654","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573654","url":null,"abstract":"This paper presents the fabrication and characterization of metal oxides based sensor for detection of formaldehyde gas. Three different metal oxides are considered (i.e. TiO2, ZnO and SnO2) as transducer for the optimum sensitivity and selectivity detection. The metal oxides are deposited on the top on aluminum/glass substrate using sol-gel technique. Comparison performance has been made and found that SnO2 gives better sensitivity detection of formaldehyde molecule as compared with TiO2 and ZnO. At this stage, the test validation is done by dipping the electrode in 100 ppm formaldehyde liquid solution. Further, we show that SnO2 provides better selectivity toward the detection of formaldehyde and compared to acetone, ethanol, formaldehyde, isopropanol and methanol. Lastly, we demonstrate that, our sensor capable to detect down to 0.010 ppm of formaldehyde liquid. This excellent capability is achieved due to good uniformity and high surface-to-volume (approximately 70 nm) of SnO2 surface morphology characterized by using AFM.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124042090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Design analysis of graphene membrane mechanics and vibration response 石墨烯膜力学及振动响应设计分析
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-09-22 DOI: 10.1109/SMELEC.2016.7573606
Haslinawati Mohd Mustapha, M. A. Mohamed, A. A. Hamzah, B. Majlis
{"title":"Design analysis of graphene membrane mechanics and vibration response","authors":"Haslinawati Mohd Mustapha, M. A. Mohamed, A. A. Hamzah, B. Majlis","doi":"10.1109/SMELEC.2016.7573606","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573606","url":null,"abstract":"The analysis of membrane mechanics and vibration response are decisive especially in modeling and fabrication of sensor. This paper presents a graphene as a membrane material with some mathematical formula that used in evaluate the model. A structural model of graphene membrane for NEMS capacitive nanophone was built in Comsol Multiphysics version 5.1. The membrane is designed as in circular shape with selective diameter and thickness. A comparative study with different membrane thickness is discussed thoroughly. The 0.3 nm graphene membrane shows the highest deflection as 90.0 μm while the thicker graphene membrane, 1.0 nm and 3.0 nm gives the less deflection which is 14.0 μm and 0.5 μm respectively. The graph of deflection and the natural frequency with the mode shapes are observed. It shows a linear relation between the deflection and applied pressure regardless the value of the thickness of graphene membrane.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127112147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Complete band gap in a pillar-based piezoelectric phononic crystal slab 柱基压电声子晶体板的完全带隙
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-09-22 DOI: 10.1109/SMELEC.2016.7573591
M. Faiz, A. Zain, B. Majlis, M. Addouche, A. Khelif
{"title":"Complete band gap in a pillar-based piezoelectric phononic crystal slab","authors":"M. Faiz, A. Zain, B. Majlis, M. Addouche, A. Khelif","doi":"10.1109/SMELEC.2016.7573591","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573591","url":null,"abstract":"In this paper we have shown that it is possible to obtain the complete phononic band gaps in a square lattice of pillar-based phononic crystal. Bigger phononic band gap width can be obtained by increasing the height of pillar and it filling fraction, f. It is shown that the gap-to-mid-gap ratio of pillar at h/a = 0.5 has increased by 21.2% when it height increased to 1.25 and the gap-to-mid-gap ratio has increased by 12% when the filling fraction is increased from r/a = 0.3 to 0.45. The study also shows bigger band gap width and higher central frequency can be obtained by increasing the filling fraction of pillar.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"26 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126060801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Statistical variability in n-channel SOI FinFET in the presence of random discrete dopant n沟道SOI FinFET在随机离散掺杂下的统计变异性
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-09-22 DOI: 10.1109/SMELEC.2016.7573634
N. Alias, Rahimah Hassan, Z. Johari
{"title":"Statistical variability in n-channel SOI FinFET in the presence of random discrete dopant","authors":"N. Alias, Rahimah Hassan, Z. Johari","doi":"10.1109/SMELEC.2016.7573634","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573634","url":null,"abstract":"Among the source of variability, random discrete dopant (RDD) fluctuation is significant in current technology scaling nodes. Number and position of discrete dopants give a crucial impact on device's electrical characteristics. In this paper, a comprehensive full-scale 3D simulation study of nanoscale n-channel Source-on-Insulator (SOI) Fin-Type Field Effect Transistor (FinFET) with gate length, Lg=22nm is investigated. 3D “atomistic” simulations for discretely doped case with 50 discrete dopants are randomly positioned into the 3D channel region to explore the statistical variability behavior of the device. Comparison between high and low channel doping (Nch) and difference fin height-to-width ratio (Hfin/Wfin) have been made. As a consequence, it affected the statistical variability of the threshold voltage (Vth), sub-threshold slope (SS), and drain induced barrier lowering (DIBL) in the n-channel SOI FinFET device. The mean and standard deviation of these devices are calculated to analyze the electrical characteristics variation. For both devices with low and high channel doping concentrations, greater fin height-to-width aspect ratio (Hfin/Wfin) can significantly suppress the electrical characteristics variation.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130656030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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