2016 IEEE International Conference on Semiconductor Electronics (ICSE)最新文献_第2页

Inset-fed U-slotted patch antenna array for 10GHz radio-over-fiber applications 插入式馈电u槽贴片天线阵列，用于10GHz光纤无线电应用

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-09-22 DOI: 10.1109/SMELEC.2016.7573605

P. Daud, D. Mahmudin, A. A. Fathnan, I. Syamsu, T. T. Estu, Y. N. Wijayanto

{"title":"Inset-fed U-slotted patch antenna array for 10GHz radio-over-fiber applications","authors":"P. Daud, D. Mahmudin, A. A. Fathnan, I. Syamsu, T. T. Estu, Y. N. Wijayanto","doi":"10.1109/SMELEC.2016.7573605","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573605","url":null,"abstract":"The increasing need for telecommunications, optical telecommunications networks in developed as well developing the functionality of radio waves with light waves in a Radio over Fiber network. On the network needed an antenna to support the process of receivers pick up radio waves then modulated with light waves. Antennas on Radio over Fiber can work at a frequency of 10 GHz WPAN communications. Wireless frequencies captured by the antenna can then be directly modulated and distributed through an optical fiber in accordance with needs. Antenna characteristic which must be met including small size, have a good level of matching, only consume little electric current, and has a unidirectional radiation pattern. In this paper, using an electromagnetic simulator, designed and simulated arrayinset fed rectangular microstrip antenna with U-slot for Radio over Fiber applications in WPAN communications that can be used optimally at a frequency of 10 GHz. The simulation results with optimum performance further implemented and observed at a frequency of 10 GHz performance. Results from the design and realization are patch arrayrectangular microstrip antenna with U-slot working at a frequency of 10 GHz with unidirectional radiation pattern; ≥ 3dBi gain; input impedance = 50Ω; and VSWR ≤ 1.5.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128337132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Multi-response optimization in vertical double gate PMOS device using Taguchi method and grey relational analysis 基于田口法和灰色关联分析的垂直双栅PMOS器件多响应优化

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-09-22 DOI: 10.1109/SMELEC.2016.7573592

K. Kaharudin, F. Salehuddin, A. Zain, M. Aziz, Z. Manap, Nurul Akmal Abd Salam, Wira Hidayat Bin Mohd Saad

{"title":"Multi-response optimization in vertical double gate PMOS device using Taguchi method and grey relational analysis","authors":"K. Kaharudin, F. Salehuddin, A. Zain, M. Aziz, Z. Manap, Nurul Akmal Abd Salam, Wira Hidayat Bin Mohd Saad","doi":"10.1109/SMELEC.2016.7573592","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573592","url":null,"abstract":"Miniturization of MOSFET device leads to statistical variation of many process parameters that may cause the degradation of the device performance. Taguchi method has been applied as a tool to optimize the process parameter variation. Since, Taguchi method is only limited to the solution of a single response, it is combined with grey relational analysis (GRA) to solve multi-response optimization. This paper presents a proposed method to optimize halo implant energy, halo implant tilt angle, source/drain (S/D) implant energy and source/drain (S/D) implant tilt angle upon multiple performance characteristics of WSix/TiO2 channel vertical double-gate PMOS device. The normalized experimental results based on L9 Taguchi method are utilized to compute grey relational coefficients and grades. The final results show that the process parameters have been successfully optimized in obtaining a nominal threshold voltage (-0.1783 V), a high drive current (1539.1 μA/μm) and a low leakage current (6.749E-11 A/μm) which meet the International Technology Roadmap Semiconductor (ITRS) 2013 prediction for high performance logic multi-gate technology.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124451698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Stability optimization of TiO2 dye-sensitized solar sub-modules in Z-type series interconnection z型串联互连中TiO2染料敏化太阳能子组件稳定性优化

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-09-22 DOI: 10.1109/SMELEC.2016.7573647

P. N. Anggraini, L. Muliani, G. Wiranto, L. Retnaningsih, J. Hidayat

{"title":"Stability optimization of TiO2 dye-sensitized solar sub-modules in Z-type series interconnection","authors":"P. N. Anggraini, L. Muliani, G. Wiranto, L. Retnaningsih, J. Hidayat","doi":"10.1109/SMELEC.2016.7573647","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573647","url":null,"abstract":"Dye sensitized solar cells (DSSC), one of the promising technology for renewable energy, has reached good performance in laboratory scale. In order to be implemented in practical use, it has become a necessity to enlarge the small size DSSC into large area (module) and to optimize stability of the module. In this study, dye sensitized solar sub-modules were fabricated with a size of 33 mm × 50 mm consisting of two active cells, each with a size of 10 mm × 50 mm, which are interconnected in type-z series. Working electrode of the sub-modules was prepared using a screen printing technique to deposit the TiO2 paste on glass conductive substrate with TiCl4 pre-treatment and post-treatment. The sub-modules were assembled using two types of sealant to investigate the effect of sealant on lifetime of the sub-module. I-V measurement using sun simulator with light intensity of 500 watt/m2 was applied twice in the range of six days to obtain the sub-module lifetime stability result. From the first I-V test, the highest photoconversion efficiency of the sub-module was 3.58%. In the second test results, the photoconversion efficiency was decreased significantly with the lowest percentage of efficiency degradation was 95.81%.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126892258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mechanical analysis of condenser microphone based on silicon carbide diaphragm for sonic detection 基于碳化硅膜片的声检测电容传声器力学分析

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-09-21 DOI: 10.1109/SMELEC.2016.7573582

S. A. Zawawi, A. A. Hamzah, B. Majlis, F. Mohd-Yasin

引用次数: 4

Fabrication of reduced graphene oxide-gated AlGaAs/GaAs heterojunction transistor 还原氧化石墨烯门控AlGaAs/GaAs异质结晶体管的制备

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573660

Siti Nadiah Che Azmi, S. F. Abd Rahman, A. M. Hashim

引用次数: 0

A charge-based compact modeling of cylindrical surrounding-floating gate MOSFET (S-FGMOSFET) for memory cell application 用于存储单元的圆柱形环绕浮栅MOSFET (S-FGMOSFET)基于电荷的紧凑建模

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573615

A. Hamzah, Z. Johari, R. Ismail

引用次数: 0

The application of Taguchi method on the robust optimization of p-FinFET device parameters 田口法在p-FinFET器件参数鲁棒优化中的应用

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573611

N. A. F. Othman, F. N. N. Azhari, S. F. Wan Muhamad Hatta, N. Soin

{"title":"The application of Taguchi method on the robust optimization of p-FinFET device parameters","authors":"N. A. F. Othman, F. N. N. Azhari, S. F. Wan Muhamad Hatta, N. Soin","doi":"10.1109/SMELEC.2016.7573611","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573611","url":null,"abstract":"Determining the exact device parameter for a particular transistor is crucial in order to ensure the device is operating at their best possible conditions. This paper discusses the application of Taguchi method on device parameter design for a 7nm germanium p-FinFET with optimization using design of experiments. In this work, the Sentaurus Simulator is used as the medium of simulation and analysis. The Taguchi method was implemented to determine the most appropriate combination of factors for robust device performance using orthogonal arrays, signal-to-noise ratio as well as Pareto analysis of variance as the quality characteristic of choices. The factors involved in the design of experiments include the length and height of the fin as well as the width of the fin at the top region. The on-state current and off-state current were considered using these methods by applying larger the better and smaller the better characteristics respectively. Using Taguchi's robust performance signal-to-noise ratio and Pareto analysis of variance, the combination of parameters with high on-current and low off-current were obtained. It is observed that with fin length of 8nm, height of 35nm and width of 7nm, the best performance in terms of on-current for p-FinFET can be achieved with the values of 1.8847mA. On the contrary, with dimensions fin length of 15nm, height of 25nm and width of 2nm can leads to best performance in terms of off-current with the values of 26.7nA.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116236666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Message from ICSE2016 conference chair 来自ICSE2016会议主席的信息

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573568

B. Majlis

引用次数: 0

Colorimetric assay of HIV-1 Tat protein and peptide HIV-1 Tat蛋白和肽的比色测定

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573626

M. S. Radhi, A. R. Ruslinda, M. F. Fatin, S. S. B. Hashwan, M. Arshad, U. Hashim

{"title":"Colorimetric assay of HIV-1 Tat protein and peptide","authors":"M. S. Radhi, A. R. Ruslinda, M. F. Fatin, S. S. B. Hashwan, M. Arshad, U. Hashim","doi":"10.1109/SMELEC.2016.7573626","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573626","url":null,"abstract":"Colorimetric analysis has been used to determine the biomolecules interaction in a solution with that can be indicated from color changes that can be observed either by spectrophotometer or naked eyes. Gold nanoparticles (GNP) which originally exist as pink color solution will aggregate and turn to purple color when mixed with salt solution. It was used as the basic solution and it mixed with aptamer probe and when NaCl salt solution was added to the mixture, the color changes was observed from pink to purple in the presence of HIV-1 Tat protein target. GNP are capable of adsorbing small oligonucleotides due to their propensity for electrostatic attractions, hydrophobic absorption, and covalent binding. In this experiment, GNP adsorbed the aptamer probe covering its surface preventing salt solution from interacting with GNP. Colorimetric detection is use to prove the interaction that happened in the mixing solution of aptamer and protein by observing the color changes with the presence of target and measuring the absorbance of wavelength of the solution. The wavelength shift has been observed due to changes in color. The value of wavelength for GNP observed was 522nm and shifted in wavelength can be observed in the presence of tat protein at 531.83nm while for tat peptide at 529.84nm.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"88 16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126312085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Circuit modeling of Surface Acoustic Wave (SAW) resonator with circular geometry 圆形表面声波(SAW)谐振器的电路建模

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573590

Nurul Jannah Mukhtar, Norazreen Abd Aziz, B. Bais, B. Majlis

引用次数: 6