Siti Nadiah Che Azmi, S. F. Abd Rahman, A. M. Hashim
{"title":"Fabrication of reduced graphene oxide-gated AlGaAs/GaAs heterojunction transistor","authors":"Siti Nadiah Che Azmi, S. F. Abd Rahman, A. M. Hashim","doi":"10.1109/SMELEC.2016.7573660","DOIUrl":null,"url":null,"abstract":"In this report, we discuss possible chemical sensing operation of a graphene-gated AlGaAs/GaAs heterojunction transistor. Band diagram analysis shows the change in transistor conductivity after the graphene work function is altered due to chemical doping by the absorbates. Next, the fabrication process of the device is described and some preliminary results are presented. As for graphene gate, reduced graphene oxide (rGO) was prepared from reduction of graphene oxide solution by ascorbic acid. The reduction process was confirmed by UV-Vis spectroscopy, Raman spectroscopy and current-voltage measurement. Formation of the rGO gate structure in the device could be obtained by a simple procedure involves photolithography and lift-off process.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2016.7573660","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this report, we discuss possible chemical sensing operation of a graphene-gated AlGaAs/GaAs heterojunction transistor. Band diagram analysis shows the change in transistor conductivity after the graphene work function is altered due to chemical doping by the absorbates. Next, the fabrication process of the device is described and some preliminary results are presented. As for graphene gate, reduced graphene oxide (rGO) was prepared from reduction of graphene oxide solution by ascorbic acid. The reduction process was confirmed by UV-Vis spectroscopy, Raman spectroscopy and current-voltage measurement. Formation of the rGO gate structure in the device could be obtained by a simple procedure involves photolithography and lift-off process.