Fabrication of reduced graphene oxide-gated AlGaAs/GaAs heterojunction transistor

Siti Nadiah Che Azmi, S. F. Abd Rahman, A. M. Hashim
{"title":"Fabrication of reduced graphene oxide-gated AlGaAs/GaAs heterojunction transistor","authors":"Siti Nadiah Che Azmi, S. F. Abd Rahman, A. M. Hashim","doi":"10.1109/SMELEC.2016.7573660","DOIUrl":null,"url":null,"abstract":"In this report, we discuss possible chemical sensing operation of a graphene-gated AlGaAs/GaAs heterojunction transistor. Band diagram analysis shows the change in transistor conductivity after the graphene work function is altered due to chemical doping by the absorbates. Next, the fabrication process of the device is described and some preliminary results are presented. As for graphene gate, reduced graphene oxide (rGO) was prepared from reduction of graphene oxide solution by ascorbic acid. The reduction process was confirmed by UV-Vis spectroscopy, Raman spectroscopy and current-voltage measurement. Formation of the rGO gate structure in the device could be obtained by a simple procedure involves photolithography and lift-off process.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2016.7573660","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In this report, we discuss possible chemical sensing operation of a graphene-gated AlGaAs/GaAs heterojunction transistor. Band diagram analysis shows the change in transistor conductivity after the graphene work function is altered due to chemical doping by the absorbates. Next, the fabrication process of the device is described and some preliminary results are presented. As for graphene gate, reduced graphene oxide (rGO) was prepared from reduction of graphene oxide solution by ascorbic acid. The reduction process was confirmed by UV-Vis spectroscopy, Raman spectroscopy and current-voltage measurement. Formation of the rGO gate structure in the device could be obtained by a simple procedure involves photolithography and lift-off process.
还原氧化石墨烯门控AlGaAs/GaAs异质结晶体管的制备
在本报告中,我们讨论了石墨烯门控AlGaAs/GaAs异质结晶体管可能的化学传感操作。带图分析显示了由于吸收剂的化学掺杂改变了石墨烯功函数后晶体管电导率的变化。其次,介绍了该器件的制作过程,并给出了一些初步结果。石墨烯栅极采用抗坏血酸还原氧化石墨烯溶液制备还原氧化石墨烯(rGO)。通过紫外-可见光谱、拉曼光谱和电流-电压测量证实了还原过程。该器件中rGO栅极结构的形成可以通过简单的光刻和剥离过程来实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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