Journal of Physics: Condensed Matter最新文献_第7页

A back-to-back diode model applied to van der Waals Schottky diodes. 应用于范德瓦尔斯肖特基二极管的背靠背二极管模型。

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2024-08-09 DOI: 10.1088/1361-648X/ad69ef

Jeffrey A Cloninger, Raine Harris, Kristine L Haley, Randy M Sterbentz, Takashi Taniguchi, Kenji Watanabe, Joshua O Island

{"title":"A back-to-back diode model applied to van der Waals Schottky diodes.","authors":"Jeffrey A Cloninger, Raine Harris, Kristine L Haley, Randy M Sterbentz, Takashi Taniguchi, Kenji Watanabe, Joshua O Island","doi":"10.1088/1361-648X/ad69ef","DOIUrl":"10.1088/1361-648X/ad69ef","url":null,"abstract":"The use of metal and semimetal van der Waals contacts for 2D semiconducting devices has led to remarkable device optimizations. In comparison with conventional thin-film metal deposition, a reduction in Fermi level pinning at the contact interface for van der Waals contacts results in, generally, lower contact resistances and higher mobilities. Van der Waals contacts also lead to Schottky barriers that follow the Schottky-Mott rule, allowing barrier estimates on material properties alone. In this study, we present a double Schottky barrier model and apply it to a barrier tunable all van der Waals transistor. In a molybdenum disulfide (MoS2) transistor with graphene and few-layer graphene contacts, we find that the model can be applied to extract Schottky barrier heights that agree with the Schottky-Mott rule from simple two-terminal current-voltage measurements at room temperature. Furthermore, we show tunability of the Schottky barrierin-situusing a regional contact gate. Our results highlight the utility of a basic back-to-back diode model in extracting device characteristics in all van der Waals transistors.","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141860083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Using magnons as a quantum technology platform: a perspective. 将磁子用作量子技术平台：一个视角。

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2024-08-08 DOI: 10.1088/1361-648X/ad6828

Pratap Kumar Pal, Amrit Kumar Mondal, Anjan Barman

引用次数: 0

Effects of vacancy defects and atomic doping on the electronic and magnetic properties of puckered penta-like PdPSe monolayer: anAb initiostudy. 空位缺陷和原子掺杂对五角形 PdPSe 单层电子和磁性能的影响：一项 Ab initio 研究。

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2024-08-08 DOI: 10.1088/1361-648X/ad69ec

A Bafekry, M Faraji, A Abdolahzadeh Ziabari, S Javad Musavi, M M Fadlallah, M Ghergherehchi, Gap Soo Chang

{"title":"Effects of vacancy defects and atomic doping on the electronic and magnetic properties of puckered penta-like PdPSe monolayer: anAb initiostudy.","authors":"A Bafekry, M Faraji, A Abdolahzadeh Ziabari, S Javad Musavi, M M Fadlallah, M Ghergherehchi, Gap Soo Chang","doi":"10.1088/1361-648X/ad69ec","DOIUrl":"10.1088/1361-648X/ad69ec","url":null,"abstract":"The experimental knowledge of two-dimensional penta-like PdPSe monolayer is largely based on a recent publication (Liet al2021Adv. Mater. 2102541). Therefore, the aim of our research is consequently to explore the effect of vacancy defects and substitutional doping on the electronic properties of the novel penta-PdPSe monolayer by using first-principles calculations. Penta-like PdPSe is a semiconductor with an indirect bandgap of 1.40 eV. We show that Pd and Se vacancy defected structures are semiconductors with band gaps of 1.10 eV and 0.95 eV respectively. While P single vacancy and double vacancy defected structures are metals. The doping with Ag (at Pd site) and Si (at P site) convert the PdPSe to nonmagnetic metallic monolayer while the doping with Rh (at Pd site), Se (at P site) and As (at site Se) convert it to diluted magnetic semiconductors with the magnetic moment of 1µB. The doping with Pt (at the Pd site), As (at the P site), S and Te (at Se site) are indirect semiconductors with a bandgap of ∼1.2 eV. We undertook this theoretical study to inspire many experimentalists to focus on penta-like PdPSe monolayer growth incorporating different impurities and by defect engineering to tune the novel two dimensional materials (PdPSe) properties for the advanced nanoelectronic application.","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141860127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetization dynamics in quasiperiodic magnonic crystals. 准周期磁性晶体中的磁化动力学。

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2024-08-08 DOI: 10.1088/1361-648X/ad5ee8

Riya Mehta, Bivas Rana, Susmita Saha

引用次数: 0

Strain aided drastic reduction in lattice thermal conductivity and improved thermoelectric properties in Janus MXenes. 应变有助于大幅降低晶格热导率，并改善 Janus MXenes 的热电特性。

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2024-08-08 DOI: 10.1088/1361-648X/ad68b1

Himanshu Murari, Swati Shaw, Subhradip Ghosh

{"title":"Strain aided drastic reduction in lattice thermal conductivity and improved thermoelectric properties in Janus MXenes.","authors":"Himanshu Murari, Swati Shaw, Subhradip Ghosh","doi":"10.1088/1361-648X/ad68b1","DOIUrl":"10.1088/1361-648X/ad68b1","url":null,"abstract":"Surface and strain engineering are among the cheaper ways to modulate structure property relations in materials. Due to their compositional flexibilities, MXenes, the family of two-dimensional materials, provide enough opportunity for surface engineering. In this work, we have explored the possibility of improving thermoelectric efficiency of MXenes through these routes. The Janus MXenes obtained by modifications of the transition metal constituents and the functional groups passivating their surfaces are considered as surface engineered materials on which bi-axial strain is applied in a systematic way. We find that in the three Janus compounds Zr2COS, ZrHfCO2and ZrHfCOS, tensile strain modifies the electronic and lattice thermoelectric parameters such that the thermoelectric efficiency can be maximised. A remarkable reduction in the lattice thermal conductivity due to increased anharmonicity and elevation in Seebeck coefficient are obtained by application of moderate tensile strain. With the help of first-principles electronic structure method and semi-classical Boltzmann transport theory we analyse the interplay of structural parameters, electronic and dynamical properties to understand the effects of strain and surface modifications on thermoelectric properties of these systems. Our detailed calculations and in depth analysis lead not only to the microscopic understanding of the influences of surface and strain engineering in these three systems, but also provide enough insights for adopting this approach and improve thermoelectric efficiencies in similar systems.","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141792750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Conflux of spin Nernst and spin Hall effect in ZnCu₂SnSe₄Topological Insulator. ZnCu2SnSe4 拓扑绝缘体中的自旋 Nernst 效应与自旋霍尔效应的并流。

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2024-08-08 DOI: 10.1088/1361-648X/ad68b5

Shivam Sharma, Abir De Sarkar

{"title":"Conflux of spin Nernst and spin Hall effect in ZnCu2SnSe4Topological Insulator.","authors":"Shivam Sharma, Abir De Sarkar","doi":"10.1088/1361-648X/ad68b5","DOIUrl":"10.1088/1361-648X/ad68b5","url":null,"abstract":"A comprehensive exploration of the intriguing phenomena known as the spin Nernst effect (SNE) and the spin Hall effect (SHE) within the context of nonmagnetic strong topological insulatorZnCu2SnSe4, has been carried out employing first-principles calculations. Our theoretical calculations unveil significantly large intrinsic spin Nernst conductivity (SNC) and spin Hall conductivity (SHC) in the bulk topological insulatorZnCu2SnSe4. Delving deeper into the intricacies of our findings, we elucidate how the inverted band order in the topological materials drastically influences the spin Berry curvature, consequently exerting a profound impact on SHC and SNC. Detailed analyses reveal that the contribution from the bulk to the generation of pure spin current in a topological insulator is comparable to that of a surface. This underscores the potential role of topological insulators in the development of spin-switching devices. We present compelling evidence thatZnCu2SnSe4holds immense promise as an optimal candidate for the generation of pure spin currents, achieved through the application of both thermal gradients and electric fields. This, in turn, opens up exciting avenues for its utilization in the realms of spin-caloritronics, spin-orbitronics, and spintronics.","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141792746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ferroelectricity-controlled magnetic ordering and spin photocurrent in NiCl₂/GeS multiferroic heterostructures. NiCl2/GeS 多铁素体异质结构中的铁电控制磁有序和自旋光电流。

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2024-08-08 DOI: 10.1088/1361-648X/ad69f3

Anu Arora, Pradip Nandi, Abir De Sarkar

{"title":"Ferroelectricity-controlled magnetic ordering and spin photocurrent in NiCl2/GeS multiferroic heterostructures.","authors":"Anu Arora, Pradip Nandi, Abir De Sarkar","doi":"10.1088/1361-648X/ad69f3","DOIUrl":"10.1088/1361-648X/ad69f3","url":null,"abstract":"Controlling magnetism solely through electrical means is indeed a significant challenge, yet holds great potential for advancing information technology. Herein, our investigation presents a promising avenue for electrically manipulating magnetic ordering within 2D van der Waals NiCl2/GeS heterostructures. These heterostructures, characterized by their unique magnetic-ferroelectric (FE) layer stacking, demonstrate spin-constrained photoelectric memory, enabling low-power electrical writing and non-destructive optical reading. The two orientations of the polarization in the GeS FE layer bring about changes in the ground state configuration, transitioning from ferromagnetic (FM) to antiferromagnetic (AFM) orderings within the NiCl2magnetic layer. Correspondingly, the light-induced charge transfer prompts either spin-polarized or unpolarized currents from the FM or AFM states, serving as distinct '1' or '0' states, and facilitating applications in logic processing and memory devices. This transition stems from the interplay of interfacial charge transfer mechanisms and the influence of the effective electric field (Eeff), bringing a non-volatile electric enhancement in the magnetic anisotropy energy within the NiCl2/GeS heterostructure. Overall, our study highlights the NiCl2/GeS heterostructure as an optimal candidate for realizing spin-dependent photoelectric memory, offering unprecedented opportunities for seamlessly integrating memory processing capabilities into a single device through the utilization of layered multiferroic heterostructures.","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141860128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A new perspective on ductile high-T_csuperconductors under ambient pressure: few-hydrogen metal-bonded hydrides. 环境压力下韧性高 Tcs 超导体的新视角：少氢金属键氢化物。

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2024-08-07 DOI: 10.1088/1361-648X/ad68b3

Jun-Jie Shi, Chong Tian, Yong He, Shi-Ming Liu, Yao-Hui Zhu, Juan Du, Hong-Xia Zhong, Xinqiang Wang

{"title":"A new perspective on ductile high-Tcsuperconductors under ambient pressure: few-hydrogen metal-bonded hydrides.","authors":"Jun-Jie Shi, Chong Tian, Yong He, Shi-Ming Liu, Yao-Hui Zhu, Juan Du, Hong-Xia Zhong, Xinqiang Wang","doi":"10.1088/1361-648X/ad68b3","DOIUrl":"10.1088/1361-648X/ad68b3","url":null,"abstract":"Superconducting materials have garnered widespread attention due to their zero-resistance characteristic and complete diamagnetism. After more than 100 years of exploration, various high-temperature superconducting materials including cuprates, nickelates, iron-based compounds, and ultra-high pressure multi-hydrides have been discovered. However, the practical application of these materials is severely hindered by their poor ductility and/or the need for high-pressure conditions to maintain structural stability. To address these challenges, we first provide a new thought to build high-temperature superconducting materials based on few-hydrogen metal-bonded hydrides under ambient pressure. We then review the related research efforts in this article. Moreover, based on the bonding type of atoms, we classify the existing important superconducting materials and propose the new concepts of pseudo-metal and quasi-metal superconductivity, which are expected to be helpful for the design of new high-temperature superconducting materials in the future.","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141792745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First-principles study of non-linear thermal expansion in cadmium titanate by molecular dynamics incorporating nuclear quantum effects. 通过分子动力学结合核量子效应对钛酸镉非线性热膨胀的第一原理研究。

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2024-08-07 DOI: 10.1088/1361-648X/ad68b0

Kansei Kanayama, Kazuaki Toyoura

引用次数: 0

High ionic conductivity materials Li₃YBr₆and Li₃LaBr₆for solid-state batteries: first-principles calculations. 用于固态电池的高离子导电性材料 Li3YBr6 和 Li3LaBr6：第一原理计算。

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2024-08-07 DOI: 10.1088/1361-648X/ad68b4

Yaping Li, Dylan McCoy, Justin Bordonaro, Jack W Simonson, Shi-Yu Liu, Sanwu Wang

{"title":"High ionic conductivity materials Li3YBr6and Li3LaBr6for solid-state batteries: first-principles calculations.","authors":"Yaping Li, Dylan McCoy, Justin Bordonaro, Jack W Simonson, Shi-Yu Liu, Sanwu Wang","doi":"10.1088/1361-648X/ad68b4","DOIUrl":"10.1088/1361-648X/ad68b4","url":null,"abstract":"High ionic conductivity solid-state electrolytes are essential for powerful solid-state lithium-ion batteries. With density functional theory andab initiomolecular dynamics simulations, we investigated the crystal structures of Li3YBr6and Li3LaBr6. The lowest energy configurations with uniform distribution of lithium ions were identified. Both materials have wide electrochemical stability windows (ESW): 2.64 V and 2.57 V, respectively. The experimental ESW for Li3YBr6is 2.50 V. Through extrapolating various temperature diffusion results, the conductivity of Li3YBr6was obtained at room temperature, approximately 3.9 mS cm-1, which is comparable to the experimental value 3.3 mS cm-1. Li3LaBr6has a higher conductivity, a 100% increase compared with Li3YBr6. The activation energies of Li3YBr6and Li3LaBr6through the Arrhenius plot are 0.26 eV and 0.24 eV, respectively, which is also close to the experimental value of 0.30 eV for Li3YBr6. This research explored high ionic conductivity halide materials and will contribute to developing solid-state lithium-ion batteries.","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141792748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0