{"title":"Enhancing Ω Phase Thermal Stability in Al Alloys through Interstitial Ordering.","authors":"Xiaowei Zhou, Liwen Wang, Chunxuan Liu, Jingwen Qiu, Hongrong Liu, Ziran Liu","doi":"10.1088/1361-648X/ada9ae","DOIUrl":"https://doi.org/10.1088/1361-648X/ada9ae","url":null,"abstract":"<p><p>Scandium (Sc) can orderly occupy interstitial sites within the Ω phase of aluminum alloys, forming a new phase that significantly enhances the thermal stability of the alloy. However, Sc is relatively expensive and rare. In this work, we employ first-principles calculations to delve into the physical essence interstitial ordering of Sc in enhancing thermal stability at the electronic level, thereby revealing the crucial factors responsible for this improvement. By computationally screening all potential metallic elements across the periodic table, we uncover that, in addition to Sc, a diverse range of elements including lithium (Li), calcium (Ca), strontium (Sr), and some of rare earth elements (Sm, Ce, Y), possess the potential to contribute to thermal stability enhancement through interstitial ordering mechanisms in aluminum alloys. This study deepens our understanding of microstructural thermal stability and offers novel strategies for designing improved thermally stable Al alloys.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142978868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Henrique Felipe Melo, Juliana Brant, Paulo Guimaraes
{"title":"Thickness-dependence of the in-plane thermal conductivity and the interfacial thermal conductance of supported MoS2.","authors":"Henrique Felipe Melo, Juliana Brant, Paulo Guimaraes","doi":"10.1088/1361-648X/ada9ad","DOIUrl":"https://doi.org/10.1088/1361-648X/ada9ad","url":null,"abstract":"<p><p>Nowadays, experimental research advances in condensed matter physics are deep-rooted in the development and manipulation of nanomaterials, making it essential to explore the fundamental properties of materials that are candidates for nanotechnology. In this work, we study the dependence of the molybdenum disulfide (MoS2) Raman modes on the sample temperature and on the excitation laser power. From the correlation between these two sets of measurements, we determine the planar thermal conductivity of MoS<sub>2</sub>monolayers, bilayers, trilayers, four layers, seven layers, and eight layers. We find a nonmonotonic behavior, with the thermal conductivity decreasing from 38 Wm-1K-1 to 24 Wm-1K-1, going from monolayer to trilayers, and then increasing from 24 Wm<sup>-1</sup>K<sup>-1</sup>to 50 Wm<sup>-1</sup>K<sup>-1</sup>when the thickness increases from three to eight layers. We associate this behavior with a convolution of two different phonon scattering processes: boundary scattering and interlayer scattering. We also report a monotonic thickness dependence of the interfacial thermal conductance of n-layers of MoS<sub>2</sub>on SiO<sub>2</sub>/Si, which ranges from 0.9 MWm<sup>-2</sup>K<sup>-1</sup>for a monolayer to 3.2 MWm<sup>-2</sup>K<sup>-1</sup>for eight layers films.
.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142978871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Subhasish Chaki, Kristian Stølevik Olsen, Hartmut Löwen
{"title":"Dynamics of a single anisotropic particle under various resetting protocols.","authors":"Subhasish Chaki, Kristian Stølevik Olsen, Hartmut Löwen","doi":"10.1088/1361-648X/ada336","DOIUrl":"10.1088/1361-648X/ada336","url":null,"abstract":"<p><p>We study analytically the dynamics of an anisotropic particle subjected to different stochastic resetting schemes in two dimensions. The Brownian motion of shape-asymmetric particles in two dimensions results in anisotropic diffusion at short times, while the late-time transport is isotropic due to rotational diffusion. We show that the presence of orientational resetting promotes the anisotropy to late times. When the spatial and orientational degrees of freedom are reset, we find that a non-trivial spatial probability distribution emerges in the steady state that is determined by the initial orientation, particle asymmetry and the resetting rate. When only spatial degrees of freedom are reset while the orientational degree of freedom is allowed to evolve freely, the steady state is independent of the particle asymmetry. When only particle orientation is reset, the late-time probability density is given by a Gaussian with an effective diffusion tensor, including off-diagonal terms, determined by the resetting rate. Generally, the coupling between the translational and rotational degrees of freedom, when combined with stochastic resetting, gives rise to unique behavior at late times not present in the case of symmetric particles. Considering recent developments in experimental implementations of resetting, our results can be useful for the control of asymmetric colloids, for example in self-assembly processes.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142885806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Band sorting based on global continuity of eigenvalues and topological properties of phononic crystals.","authors":"Lihong Ao, Aymeric Ramiere","doi":"10.1088/1361-648X/ada410","DOIUrl":"https://doi.org/10.1088/1361-648X/ada410","url":null,"abstract":"<p><p>Band sorting is critical to obtaining physical properties from eigenvalues and eigenvectors that constitute the band diagram. We propose a band sorting method based on the global continuity and smoothness of the eigenvalues on the parameter space. Several strategies based on the connection between neighbor eigenvalues and how to sweep the parameter space are introduced to recognize level crossing degeneracies and level repulsion degeneracies. Eigenvectors are then reassigned to each band according to their corresponding eigenvalues. As an example, the band diagram of a 2D phononic crystal is sorted, and the group velocity and Berry curvature are compared before and after band sorting. The Berry curvature shows unexpected eigenvector discontinuities, indicating that our method based on the eigenvalues only is more reliable than methods based on the eigenvectors. Our proposed method is general and allows for studying the transport and topological properties of periodic materials.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":"37 11","pages":""},"PeriodicalIF":2.3,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142950589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaosong Bai, Yan Wang, Wenwen Yang, Qiunan Xu, Wenjian Liu
{"title":"Magnetic topological Weyl fermions in half-metallic In<sub>2</sub>CoSe<sub>4</sub>.","authors":"Xiaosong Bai, Yan Wang, Wenwen Yang, Qiunan Xu, Wenjian Liu","doi":"10.1088/1361-648X/ada50a","DOIUrl":"10.1088/1361-648X/ada50a","url":null,"abstract":"<p><p>Magnetic Weyl semimetals (WSMs) have recently attracted much attention due to their potential in realizing strong anomalous Hall effects. Yet, how to design such systems remains unclear. Based on first-principles calculations, we show here that the ferromagnetic half-metallic compound In<sub>2</sub>CoSe<sub>4</sub>has several pairs of Weyl points and is hence a good candidate for magnetic WSM. These Weyl points would approach the Fermi level gradually as the Hubbard<i>U</i>increases, and finally disappear after a critical valueUc. The range of the Hubbard<i>U</i>that can realize the magnetic WSM state can be expanded by pressure, manifesting the practical utility of the present prediction. Moreover, by generating two surface terminations at Co or In atom after cleaving the compound at the Co-Se bonds, the nontrivial Fermi arcs connecting one pair of Weyl points with opposite chirality are discovered in surface states. Furthermore, it is possible to observe the nontrivial surface state experimentally, e.g. angle-resolved photoemission spectroscopy measurements. As such, the present findings imply strongly a new magnetic WSM which may host a large anomalous Hall conductivity.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142921748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Magnetoelectric properties and Morin type spin transitions of Na-doped GaFeO<sub>3</sub>.","authors":"Zamzama Rahmany, Savitha Pillai S","doi":"10.1088/1361-648X/ada413","DOIUrl":"https://doi.org/10.1088/1361-648X/ada413","url":null,"abstract":"<p><p>The effects of Na doping on the structure magnetic, electric, and magnetoelectric properties of GaFeO<sub>3</sub>were studied. Rietveld refinement of the XRD data reveals the formation of a single-phase trigonal structure with no impurity on Na doping up to 50% and a significant increase in lattice strain with doping. FTIR and Raman analysis further supported the phase purity of the samples. The morphology of the samples was studied using FESEM, and the particle size increased with Na doping. Magnetic data shows room temperature ferrimagnetic properties. Temperature-dependent magnetization measurements revealed a noticeable change from GaFeO<sub>3</sub>, exhibiting a Morin-like transition at 182 K for the lowest Na content. This AFM transition temperature increased to 217 K with the highest Na doping levels. The temperature-dependent Raman spectra do not reveal any structural phase transition and show a distinct change in phonon modes near the spin reorientation temperature. The leakage current density of the samples at 100 volts increased from 10<sup>-8</sup>A cm<sup>-2</sup>to (10<sup>-4</sup>-10<sup>-5</sup>A cm<sup>-2</sup>) with Na doping. The frequency-dependent dielectric constant increased largely with doping. The magnetoelectric coupling coefficient measured at room temperature rises for<i>x</i>= 0.05 to (36.2 ps m<sup>-1</sup>) and slowly decreases as Na concentration increases.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":"37 11","pages":""},"PeriodicalIF":2.3,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142950395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The properties of solids: 'If you want to understand function, study structure'.","authors":"R O Jones","doi":"10.1088/1361-648X/ada412","DOIUrl":"https://doi.org/10.1088/1361-648X/ada412","url":null,"abstract":"<p><p>The importance of the structure-function relationship in molecular biology was confirmed dramatically by the recent award of the 2024 Nobel Prize in Chemistry 'for computational protein design' and 'for protein structure prediction'. The relationship is also important in chemistry and condensed matter physics, and we survey here structural concepts that have been developed over the past century, particularly in chemistry. As an example we take structural phase transitions in phase-change materials (PCM), which can be switched rapidly and reversibly between amorphous and crystalline states. Alloys of Ge, Sb, and Te are the materials of choice for PCM optical memory; they satisfy practical demands of stability and rapid crystallization, which results in metastable, rock salt structures, not the most stable (layered) crystalline forms.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":"37 11","pages":""},"PeriodicalIF":2.3,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142950399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M Ibarra-Reyes, R Pérez-Álvarez, I Rodríguez-Vargas
{"title":"Transfer matrix in graphene-like materials: the case of silicene and transition metal dichalcogenides.","authors":"M Ibarra-Reyes, R Pérez-Álvarez, I Rodríguez-Vargas","doi":"10.1088/1361-648X/ada416","DOIUrl":"https://doi.org/10.1088/1361-648X/ada416","url":null,"abstract":"<p><p>The fundamental properties of 1D Dirac-like problems in silicene and transition metal dichalcogenides (TMDs) are derived with the use of the transfer matrix. Analytic expressions for the transmission coefficient and the bound states are obtained for these 2D materials. The continuity between states of perfect transmission and bound states is also addressed in silicene and TMDs. The similarities and differences with respect to the fundamental properties of 1D Dirac-like problems in graphene derived with the transfer matrix (Ibarra-Reyes<i>et al</i>2023<i>J. Phys.: Condens. Matter</i><b>35</b>395301) are discussed.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":"37 11","pages":""},"PeriodicalIF":2.3,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142950404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Progress of anion redox in Na-rich layered transition metal oxides (Na<sub>2</sub>MO<sub>3</sub>) as cathode materials for sodium-ion batteries.","authors":"Junjun Yin, Shuping Huang","doi":"10.1088/1361-648X/ad9f06","DOIUrl":"10.1088/1361-648X/ad9f06","url":null,"abstract":"<p><p>Under the background of surging global demand for batteries and scarcity of Li resources, sodium-ion batteries (SIBs) are attracting attention as a potential alternative with their unique advantages, and the layered transition metal (TM) oxides therein are considered to be one of the most promising cathode materials. In this paper, firstly, the diversity of cathode materials for SIBs is systematically introduced, as well as the layered oxide structures among them are categorized, and then it focuses on the O3-type sodium-rich Na<sub>2</sub>MO<sub>3</sub>, which is promising for large-scale commercial applications, illustrating the development and mechanism of anion redox. Excess Na transforms the TM layer into the mixed Na<sub>1/3</sub>M<sub>2/3</sub>O<sub>2</sub>layer, leading to the formation of localized configuration Na-O-Na. Thereby, isolated nonhybridized O 2p states are introduced, which participate in the charge compensation process (O<sup>2-</sup>/O<i><sup>n</sup></i><sup>-</sup>) under high-voltage conditions and provide the battery with additional capacity beyond the cation redox reaction. Therefore, the Na<sub>2</sub>MO<sub>3</sub>formed by its TM element located in different periods are classified, discussed and summarized in terms of structural change characteristics, electrochemical properties and anion-redox mechanism. However, this particular redox mechanism is also accompanied by the challenges such as voltage hysteresis, irreversible oxygen loss, TM migration, capacity decay and poor air stability. Therefore, to address these challenges, various improvement strategies have been proposed, including doping of large radius metal ions, light metal ions, TM ions with high covalency with O, nonmetal ions, formation of mixed phases, and surface modification. This work is expected to provide new ways to find and design novel high-capacity Na-rich layered oxide cathode materials.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142822084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Indraneel Sinha, Shreyashi Sinha, Subham Naskar, Sujit Manna
{"title":"Magnetic-proximity-induced anomalous Hall effect at the EuO/Sb<sub>2</sub>Te<sub>3</sub>interface.","authors":"Indraneel Sinha, Shreyashi Sinha, Subham Naskar, Sujit Manna","doi":"10.1088/1361-648X/ada479","DOIUrl":"10.1088/1361-648X/ada479","url":null,"abstract":"<p><p>Time-reversal symmetry breaking of a topological insulator phase generates zero-field edge modes which are the hallmark of the quantum anomalous Hall effect (QAHE) and of possible value for dissipation-free switching or non-reciprocal microwave devices. But present material systems exhibiting the QAHE, such as magnetically doped bismuth telluride and twisted bilayer graphene, are intrinsically unstable, limiting their scalability. A pristine magnetic oxide at the surface of a TI would leave the TI structure intact and stabilize the TI surface, but epitaxy of an oxide on the lower-melting-point chalcogenide presents a particular challenge. Here we utilize pulsed laser deposition to grow (111)-oriented EuO on vacuum cleaved and annealed Sb<sub>2</sub>Te<sub>3</sub>(0001) surfaces. Under suitable growth conditions, we obtain a pristine interface and surface, as evidenced by x-ray reflectivity and scanning tunneling microscopy, respectively. Despite bulk transport in the thick (2 mm) Sb<sub>2</sub>Te<sub>3</sub>layers, devices prepared for transport studies show a strong AHE, the necessary precursor to the QAHE. Our demonstration of EuO-Sb<sub>2</sub>Te<sub>3</sub>epitaxy presents a scalable thin film approach to realize QAHE devices with radically improved chemical stability as compared to competing approaches.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142909803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}