Journal of Physics: Condensed Matter最新文献

Approaches to tunnel magnetoresistance effect with antiferromagnets.

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2025-04-02 DOI: 10.1088/1361-648X/adc05e

Katsuhiro Tanaka, Takuya Nomoto, Ryotaro Arita

{"title":"Approaches to tunnel magnetoresistance effect with antiferromagnets.","authors":"Katsuhiro Tanaka, Takuya Nomoto, Ryotaro Arita","doi":"10.1088/1361-648X/adc05e","DOIUrl":"10.1088/1361-648X/adc05e","url":null,"abstract":"The tunnel magnetoresistance (TMR) effect is one of the representative phenomena in spintronics. Ferromagnets, which have a net spin polarization, have been utilized for the TMR effect. Recently, by contrast, the TMR effect with antiferromagnets, which do not possess a macroscopic spin polarization, has been proposed, and also been observed in experiments. In this topical review, we discuss recent developments in the TMR effect, particularly focusing on the TMR effect with antiferromagnets. First, we review how the TMR effect can occur in antiferromagnetic tunnel junctions. The Julliere model, which has been conventionally utilized to grasp the TMR effect with ferromagnets, breaks down for the antiferromagnetic TMR effect. Instead, we see that the momentum dependent spin splitting explains the antiferromagnetic TMR effect. After that, we revisit the TMR effect from viewpoint of the local density of states (LDOS). We particularly focus on the LDOS inside the barrier, and show that the product of the LDOS will qualitatively capture the TMR effect not only in the ferromagnetic tunnel junctions but also in the ferrimagnetic and antiferromagnetic tunnel junctions. This method is expected to work usefully for designing magnetic tunnel junctions.","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143625034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic texture enabled electrical control of Dzyaloshinskii-Moriya interaction in a Weyl semimetal.

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2025-04-01 DOI: 10.1088/1361-648X/adc4a9

Yuriy G Semenov, Ki Wook Kim

{"title":"Magnetic texture enabled electrical control of Dzyaloshinskii-Moriya interaction in a Weyl semimetal.","authors":"Yuriy G Semenov, Ki Wook Kim","doi":"10.1088/1361-648X/adc4a9","DOIUrl":"10.1088/1361-648X/adc4a9","url":null,"abstract":"Purely electrical control of the Dzyaloshinskii-Moriya interaction (DMI) without any external magnetic field is explored in a magnetic Weyl semimetal (WSM). The underlying mechanism for the DMI in the WSM is the recently identified asymmetrical indirect spin-spin interaction compatible with the inversion symmetry of the structure. While the necessary imbalance in the fermion population of opposite chirality is normally achieved with non-orthogonal external electric and magnetic fields (i.e. the axial anomaly), it is found that the intrinsic axial magnetic field characteristic to an inhomogeneous magnetic texture can play the role of the magnetic field. When applied to the magnetic domain walls as specific examples, our theoretical analysis clearly illustrates that the resulting DMI is pinned by and can in turn significantly affect the wall textures. As the appearance and strength of the DMI can be solely controlled by the applied electric field, this mechanism enables electrical modulation of magnetic domains including their excitation in the WSMs. Numerical calculations highlight significant advantages of the WSM over the conventional magnetic materials in spintronic applications such as the racetrack memory.","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143700803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Experimental and theoretical investigation of strongly correlated antiferromagnet NdBiTe.

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2025-04-01 DOI: 10.1088/1361-648X/adc231

Prabuddha Kant Mishra, Shivani Kumawat, Soumyakanta Panda, Niharika Mohapatra, B K Mani, Ashok Kumar Ganguli

{"title":"Experimental and theoretical investigation of strongly correlated antiferromagnet NdBiTe.","authors":"Prabuddha Kant Mishra, Shivani Kumawat, Soumyakanta Panda, Niharika Mohapatra, B K Mani, Ashok Kumar Ganguli","doi":"10.1088/1361-648X/adc231","DOIUrl":"10.1088/1361-648X/adc231","url":null,"abstract":"The ZrSiS-class of layered materials offer interesting topological and magnetic characteristics suitable for spintronics applications. In this work, we have synthesized a polycrystalline NdBiTe using solid-state reaction technique and have examined the magnetic properties in 2-300 K temperature range using temperature and field-dependent magnetization measurements. Our magnetic and specific heat data demonstrates a long-range antiferromagnetic (AFM) ordering in the material below 4.5 K. Furthermore, our isothermal magnetization data show a signature of spin-reorientation below Neel temperature. The observed nonlinearity in inverse susceptibility vs temperature data, and a hump in specific heat in 5-20 K range, indicate the existence of crystal field splitting in the material. Our transport properties measurements show the metallic behavior with positive magnetoresistance in the temperature range of 2-300 K. The observed rise in resistivity as function of temperature below Neel temperature infers the strongly correlated fermions, which is consistent with the observed large Sommerfeld coefficient. Consistent with experimental results, our first-principles calculations predict an AFM semimetallic nature of NdBiTe. Further, our spin-orbit coupled simulations of electronic structure show a signature of weak topological nature of the material.","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143657576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Resistively detected electron spin resonance andg-factor in few-layer exfoliated MoS₂devices.

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2025-04-01 DOI: 10.1088/1361-648X/adc35d

Chithra H Sharma, Appanna Parvangada, Lars Tiemann, Kai Rossnagel, Jens Martin, Robert H Blick

引用次数: 0

Regulation of Transition Temperature and Magnetic Anisotropy in 2D Multiferroic Monolayer through Electron Donating and Withdrawing Groups Adsorption.

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2025-03-31 DOI: 10.1088/1361-648X/adc77b

Chee Kian Yap, Lei Zhang, Aijun Du, Cheng Tang

{"title":"Regulation of Transition Temperature and Magnetic Anisotropy in 2D Multiferroic Monolayer through Electron Donating and Withdrawing Groups Adsorption.","authors":"Chee Kian Yap, Lei Zhang, Aijun Du, Cheng Tang","doi":"10.1088/1361-648X/adc77b","DOIUrl":"https://doi.org/10.1088/1361-648X/adc77b","url":null,"abstract":"The discovery of two-dimensional (2D) magnetic materials ushers in the engineering of future magnetoelectric nanodevices and spintronics, however, it is limited by the lack of a material platform with simultaneously large magnetic anisotropy and high transition temperature. Using a recently synthesized CrSe2 monolayer as a demonstration, the impact on magnetism and electronics is studied via first-principles calculations by functionalizing the monolayer with electron-donating and electron-withdrawing groups namely NH2 and NO2. The magnetic ground state of the CrSe2 changes from the stripe antiferromagnetic to the ferromagnetic state after functionalization. The transition temperature of CrSe2-NO2 and CrSe2-NH2 enhances to 105 and 70 K, respectively, due to the expansion of the CrSe2 superlattice. Besides, the magnetic anisotropy energy (MAE) of the CrSe2-NO2 increases to 1.12 meV/Cr along the in-plane direction due to the electron-withdrawing effect of the NO2 group. Oppositely, the electron-donating effect will decrease the MAE. Moreover, robust out-of-plane electric polarization is induced into the functionalized CrSe2 monolayer, relying on the semiconducting nature and asymmetric geometry along the z direction. These findings demonstrate the critical role of functional groups in regulating the magnetic and electronic properties of 2D multiferroic structures, providing a general approach for controllable 2D spintronic applications.&#xD.","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143753228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tunable higher-order non-Hermitian skin effect in the SSH topolectrical circuits.

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2025-03-31 DOI: 10.1088/1361-648X/adc35b

Lebin Wang, Wei Lin, Banxian Ruan, Yuanjiang Xiang, Xiaoyu Dai

引用次数: 0

Machine learning-assisted study on the thermal transport properties of two-dimensional M3(C6O6)2 (M=Fe, Co, Ni) materials.

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2025-03-31 DOI: 10.1088/1361-648X/adc77c

Meng-Jiao Teng, Li-Qin Deng, Pin-Zhen Jia, Wu-Xing Zhou

{"title":"Machine learning-assisted study on the thermal transport properties of two-dimensional M3(C6O6)2 (M=Fe, Co, Ni) materials.","authors":"Meng-Jiao Teng, Li-Qin Deng, Pin-Zhen Jia, Wu-Xing Zhou","doi":"10.1088/1361-648X/adc77c","DOIUrl":"https://doi.org/10.1088/1361-648X/adc77c","url":null,"abstract":"Two-dimensional metal-organic frameworks (MOF) are widely used in electronic devices and energy storage due to their large surface area, abundant active sites, and tunable sizes. A deeper understanding of the thermal transport properties of two-dimensional MOF materials is essential for these applications. In this work, we systematically studied the thermal transport properties of M3(C6O6)2 (M = Fe, Co, Ni) by using a machine learning interatomic potential (MLIP) method combined with the phonon Boltzmann transport equation (PBTE). The results show that the lattice thermal conductivities of Fe3(C6O6)2, Co3(C6O6)2, and Ni3(C6O6)2 at room temperature are 4.0 W/mK, 5.5 W/mK, and 5.8 W/mK, respectively. The differences in thermal conductivity primarily arise from variations in phonon relaxation times, which can be elucidated by examining the three-phonon scattering phase space. Further analysis of bond strengths reveals that the strong bonding between Fe and O impedes phonon propagation through the oxygen atoms, resulting in lower lattice thermal conductivity. Our work provides a fundamental reference for understanding thermal transport in two-dimensional MOF.&#xD.","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143753226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unraveling the topological phase in Zintl semiconductors RbZn₄X₃(X = P, As) through band engineering.

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2025-03-31 DOI: 10.1088/1361-648X/adc17e

Ramesh Kumar, Rajesh Kumar, Antik Sihi, Mukhtiyar Singh

{"title":"Unraveling the topological phase in Zintl semiconductors RbZn4X3(X = P, As) through band engineering.","authors":"Ramesh Kumar, Rajesh Kumar, Antik Sihi, Mukhtiyar Singh","doi":"10.1088/1361-648X/adc17e","DOIUrl":"10.1088/1361-648X/adc17e","url":null,"abstract":"We report the topological phase transition (TPT) in compounds of relatively less explored Zintl family RbZn4X3(X = P, As) viafirst-principlescalculation. These intermetallic compounds have already been experimentally synthesized in aKCu4S3-typetetragonal structure (P4/mmm) and reported to have a topologically trivial semimetallic nature with a direct band gap. We thoroughly studied the electronic structure, stability of RbZn4X3(X = P, As) and demonstrated the TPTs in these materials with external applied pressure and epitaxial strain. The dynamical and mechanical stabilities of these compounds are verified through phonon dispersion and Born stability criteria at ambient and TPT pressure/strain. A topologically non-trivial phase in RbZn4P3(RbZn4As3) is observed at 45 GPa (38 GPa) of hydrostatic pressure and 10% (8%) of epitaxial strain. This non-trivial phase is identified by band inversion betweenZn-sandP/As-pzorbitalsin the bulk band structure of these materials which is further confirmed using the surface density of states and Fermi arc contour in(001)-plane. The ℤ2topological invariants (ν0; ν1ν2ν3) for these materials are calculated using the product of parities of all filled bands (Kane and Mele model) and the evolution of Wannier charge centers (Wilson loop method). The change in values of (ν0; ν1ν2ν3) from (0; 000) to (1; 000), at the particular values of pressure and strain, is another signature of the TPT in these materials.","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143649435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hysteresis and pyroelectric behaviour at isomorphic transition in green CsSnI₃.

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2025-03-31 DOI: 10.1088/1361-648X/adbead

Prem C Bharti, Priyanka A Jha, Pardeep K Jha, Prabhakar Singh

{"title":"Hysteresis and pyroelectric behaviour at isomorphic transition in green CsSnI3.","authors":"Prem C Bharti, Priyanka A Jha, Pardeep K Jha, Prabhakar Singh","doi":"10.1088/1361-648X/adbead","DOIUrl":"10.1088/1361-648X/adbead","url":null,"abstract":"Lead-free perovskite halide CsSnI3has emerged as a promising material for optoelectronic applications due to its direct bandgap (1.3-1.4 eV), high charge carrier mobility, and strong visible-spectrum absorption. Among its polymorphs, the green phase, with a favorable bandgap of ∼1.24 eV, demonstrates enhanced structural stability and resistance to phase degradation under ambient conditions. In this study, we investigate the green polymorph of CsSnI3and observe pyroelectric behavior, indicative of ferroelectric-like properties despite its globally centrosymmetric (Pa3-) cubic structure. Utilizing Piezo-force microscopy, dielectric measurements, impedance spectroscopy, and Raman spectroscopy, we identified local non-centrosymmetry influencing hysteresis and conduction properties. Impedance spectroscopy further reveals the interaction of grains and grain boundaries under a low AC electric field, both before and after light exposure and poling. A reduction in relaxation time with increasing temperature in poled samples is observed, while the combined effects of light exposure and poling result in an increased relaxation time. Our results indicate that local non-centrosymmetry plays a critical role in influencing hysteresis and conduction behavior. These findings highlight the importance of phase transitions and vibrational mode dynamics in optimizing the performance of CsSnI3-based devices, paving the way for their broader application in advanced optoelectronic technologies.","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143597159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On-surface C-C coupling reactivity of carbon atoms in halogenated azulene.

IF 2.3 4区物理与天体物理

Journal of Physics: Condensed Matter Pub Date : 2025-03-31 DOI: 10.1088/1361-648X/adc35c

Wenxun Feng, Yanbo Li, Jianmin Huang, Junlong Ma, Xisha Zhang, Deqing Zhang, Qitang Fan, Bing Wang

引用次数: 0