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Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits最新文献

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A design method of high efficient power amplifiers 高效率功率放大器的设计方法
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI: 10.1109/INMMC.1994.512529
C. Duvanaud, P. Bouysse, S. Dietsche, J. Nebus, J. Paillot, D. Rogues
{"title":"A design method of high efficient power amplifiers","authors":"C. Duvanaud, P. Bouysse, S. Dietsche, J. Nebus, J. Paillot, D. Rogues","doi":"10.1109/INMMC.1994.512529","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512529","url":null,"abstract":"A procedure for the design of high power added efficiency amplifier, based on optimum loads investigations, is described. Experimental results of two microwave amplifiers at 1.75 GHz and 7.5 GHz, clearly show the power full of this method. Their design and performance are reported.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134014373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nonlinear transistor modelling based on measurements results 基于测量结果的非线性晶体管建模
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI: 10.1109/INMMC.1994.512511
R. Quéré, J. Teyssier, J. Viaud, J. Obregon
{"title":"Nonlinear transistor modelling based on measurements results","authors":"R. Quéré, J. Teyssier, J. Viaud, J. Obregon","doi":"10.1109/INMMC.1994.512511","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512511","url":null,"abstract":"A new method for the characterization of microwave measurements has been developed. This method is based upon I(V) and S-parameters measured under pulsed condition thus avoiding the trapping and the thermal effects. The ability of the test-set-up to derive accurate nonlinear models for FET or HBT devices is demonstrated and a model verification with a high power FET has been performed demonstrating the need for accurate nonlinear modelling in the whole working domain.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133392034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Applying a conventional VNA to nonlinear measurements without using frequency converting standards 将传统的VNA应用于非线性测量而不使用变频标准
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI: 10.1109/INMMC.1994.512535
B. Roth, D. Kother, M. Coady, T. Sporkmann, C. Sattler
{"title":"Applying a conventional VNA to nonlinear measurements without using frequency converting standards","authors":"B. Roth, D. Kother, M. Coady, T. Sporkmann, C. Sattler","doi":"10.1109/INMMC.1994.512535","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512535","url":null,"abstract":"A novel approach is presented for a measurement system which is able to investigate the most relevant specifications of microwave circuits and components. This unique test stand is configured for on wafer measurements up to 60 GHz, but can also be used for connectorized device measurements. The main measurement capabilities of the system are: Two and three port scattering parameters, noise figure and noise parameters of two port devices, power and gain measurements including harmonic power and harmonic impedances, all mixer parameters including conversion noise and the complete conversion matrix, active load pulling and the spectrum and phase noise of oscillators. Furthermore, a new calibration method has been developed which allows the measurement of absolute values of up to three port power waves at the device under test without frequency converting standards in the calibration The system operates in combination with an automatic wafer probe station. In the future the control software for the prober will be integrated in the measurement system software giving the capability of performing wafer mapping of MMIC's e.g.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132343645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Large signal design criteria of distributed power amplifiers applied to a 2-18 GHz GaAs chip yielding high power density performances 应用于2-18 GHz GaAs芯片的分布式功率放大器的大信号设计标准，可获得高功率密度性能
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI: 10.1109/INMMC.1994.512528
M. Campovecchio, R. Hilal, B. Le Bras, M. Lajugie, J. Obregon
{"title":"Large signal design criteria of distributed power amplifiers applied to a 2-18 GHz GaAs chip yielding high power density performances","authors":"M. Campovecchio, R. Hilal, B. Le Bras, M. Lajugie, J. Obregon","doi":"10.1109/INMMC.1994.512528","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512528","url":null,"abstract":"A suitable and efficient design method of distributed power amplifiers, based on the optimum FET load requirement for power operation, is proposed in this paper. The analytical determination of the gate and drain line characteristic admittances provides both the initial values and right directions for an optimum design. The best tradeoffs between wide band and high power operation have been investigated. To validate the method, a FET amplifier demonstrator with a gate periphery of 1.2 mm has been manufactured at the Texas Instruments foundry. The MMIC amplifier demonstrated state of the art power density performance of 340 mW/mm over the 2-18 GHz band associated with 14.2% power added efficiency, 26.5% drain efficiency and 26.1 dBm output power at 1 dB compression in CW operation.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129107893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Calculation of the power capabilities of HBT amplifiers based an a new physical HBT model 基于一种新的物理HBT模型计算HBT放大器的功率能力
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI: 10.1109/INMMC.1994.512526
V. Krozer, M. Ruppert, M. Schussler, K. Fricke, W. Lee, H. Hartnagel
{"title":"Calculation of the power capabilities of HBT amplifiers based an a new physical HBT model","authors":"V. Krozer, M. Ruppert, M. Schussler, K. Fricke, W. Lee, H. Hartnagel","doi":"10.1109/INMMC.1994.512526","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512526","url":null,"abstract":"A novel model for the simulation of the microwave power capabilities of HBTs is presented. The model is based on physical analytical of the terminal currents as functions of the base-emitter and base-collector voltages. It takes into account the unequal thermal distribution of temperature for multi-finger HBT devices, the impact ionization, tunnelling, recombination currents etc. From the simulation of multi-finger transistor structures it can be concluded that high thermal device resistances are detrimental for power performance, because of the unequal distribution of temperature and hence base current in the HBT structure. It can also be concluded that the input and output reflection coefficients are insensitive to temperature variation. Finally, it has been shown theoretically and experimentally that the breakdown voltage increases slightly with increasing operating temperature.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115628684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Non-linear mixed analysis/optimisation algorithm for microwave power amplifier design 微波功率放大器设计的非线性混合分析/优化算法
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI: 10.1109/INMMC.1994.512530
F. Giannini, G. Leuzzi, E. Limiti, L. Scucchia
{"title":"Non-linear mixed analysis/optimisation algorithm for microwave power amplifier design","authors":"F. Giannini, G. Leuzzi, E. Limiti, L. Scucchia","doi":"10.1109/INMMC.1994.512530","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512530","url":null,"abstract":"A non-linear mixed analysis/optimization algorithm for the design of microwave power amplifiers is presented. Matching conditions for optimum power and efficiency performance are imposed together with the balancing equations of the non-linear analysis in a consistent way. The analysis/pre-optimization of the power stage requires a computation time comparable to that of a single conventional harmonic balance analysis. The algorithm forms the basis of a design procedure for the fulfilment of design specifications in terms of output power, power-added efficiency and gain. Comparisons with the results of commercial CAD non-linear analysis programs are presented.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127055717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Wide bandgap semiconductor MESFETs for high temperature applications 用于高温应用的宽带隙半导体mesfet
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI: 10.1109/INMMC.1994.512516
R. Trew, M. Shin
{"title":"Wide bandgap semiconductor MESFETs for high temperature applications","authors":"R. Trew, M. Shin","doi":"10.1109/INMMC.1994.512516","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512516","url":null,"abstract":"Electronic and optical devices fabricated from wide bandgap semiconductors have many properties ideal for high temperature, high frequency, high power, and radiation hard applications. Progress in wide bandgap semiconductor materials growth has been impressive and high quality epitaxial layers are becoming available. Useful devices, particularly those fabricated from SiC, are rapidly approaching the commercialization stage. In particular, MESFETs fabricated from wide bandgap semiconductors have the potential to be useful in microwave power amplifier and oscillator applications. The microwave performance of MESFETs fabricated from SiC and GaN is investigated with a theoretical simulator and the results compared to experimental measurements. Excellent agreement between the simulated and measured data is obtained. It is demonstrated that microwave power amplifiers fabricated from these semiconductors offer superior performance, particularly at elevated temperature, compared to comparable components fabricated from GaAs MESFETs.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123831496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Design of power MMICs and power combining techniques 功率mmic的设计与功率组合技术
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI: 10.1109/INMMC.1994.512514
I. Bahl
{"title":"Design of power MMICs and power combining techniques","authors":"I. Bahl","doi":"10.1109/INMMC.1994.512514","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512514","url":null,"abstract":"The current trends in power transmitters for advanced military microwave systems are demanding increased integration, reliability, radiation hardness and lower cost when produced in large volume, whereas the microwave commercial market mandates low cost. The Monolithic Microwave Integrated Circuit (MMIC) technology for power amplifiers promises to meet these requirements and provides microwave designers with a high volume manufacturing process. In this paper the design considerations for narrow band, broadband and multistage power MMICs are discussed. Examples of power MMICs developed using MSAG FET technology for narrow band and broadband applications are described. Power combining on the chip as well as using a hybrid MIC approach are discussed.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125104540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Millimeterwave power amplifiers from 18 GHz to 70 GHz 18 GHz至70 GHz毫米波功率放大器
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI: 10.1109/INMMC.1994.512527
P. Bourne-Yaonaba, E. Aubame, P. Chaumas, P. Crozat, J. Favre, P. Fellon, L. Potteau, P. Quentin, T. Redon, P. Roux, G. Vernet
{"title":"Millimeterwave power amplifiers from 18 GHz to 70 GHz","authors":"P. Bourne-Yaonaba, E. Aubame, P. Chaumas, P. Crozat, J. Favre, P. Fellon, L. Potteau, P. Quentin, T. Redon, P. Roux, G. Vernet","doi":"10.1109/INMMC.1994.512527","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512527","url":null,"abstract":"A family of fully monolithic power amplifiers processed on a PM-HFET (Pseudomorphic Heterojunction FET) technology is presented. They operate in the 18 GHz to 70 GHz frequency range. The output powers vary between 18 dBm and 28 dBm according to the operating frequency. This paper describes their design, topology and exhibited performances.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127948312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Quasi-optical THz radar and spectroscopy instrumentation based on nonlinear transmission lines MMICs 基于非线性传输线mmic的准光学太赫兹雷达与光谱仪器
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI: 10.1109/INMMC.1994.512537
M. Dragoman, A. Muller, S. Iordanescu, F. Craciunoiu, R. Rizescu, S. Simon, B. Szentpáli, K. Somogyi, F. Riesz, S. Varga
{"title":"Quasi-optical THz radar and spectroscopy instrumentation based on nonlinear transmission lines MMICs","authors":"M. Dragoman, A. Muller, S. Iordanescu, F. Craciunoiu, R. Rizescu, S. Simon, B. Szentpáli, K. Somogyi, F. Riesz, S. Varga","doi":"10.1109/INMMC.1994.512537","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512537","url":null,"abstract":"The paper presents the design, modelling and manufacturing of a new type of MMIC, a nonlinear transmission line monolithically integrated in a CPW based on GaAs. This device is the key element of the quasi-optical THz instrumentation that will be further developed. A low cost four mask technological process and manufacturing is presented.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124111668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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