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Compression analysis of a high power BJT amplifier 大功率BJT放大器的压缩分析
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI: 10.1109/INMMC.1994.512525
J. Bandler, R. Biernacki, Q. Cai, S.H. Chen
{"title":"Compression analysis of a high power BJT amplifier","authors":"J. Bandler, R. Biernacki, Q. Cai, S.H. Chen","doi":"10.1109/INMMC.1994.512525","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512525","url":null,"abstract":"In this paper we present the compression analysis of a BJT high power amplifier circuit. This circuit was chosen by Microwave Engineering Europe (MEE) as a challenge to CAD programs. The bipolar transistor is modeled by a SPICE model. Extraction of the model parameters was performed by fitting the model responses to vendor-published S-parameter data. In addition to compression analysis of the amplifier, we carried out Monte Carlo statistical simulation and sensitivity analysis. All simulations and optimizations were performed by our CAD software system OSA90/hope, in particular by our nonlinear harmonic balance simulator.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129733692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A nonlinear HEMT model for the design of frequency doubler and mixer circuits 用于倍频和混频器电路设计的非线性HEMT模型
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI: 10.1109/INMMC.1994.512519
D. Hollmann, G. Baumann, R. Heilig, M. Schlechtweg
{"title":"A nonlinear HEMT model for the design of frequency doubler and mixer circuits","authors":"D. Hollmann, G. Baumann, R. Heilig, M. Schlechtweg","doi":"10.1109/INMMC.1994.512519","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512519","url":null,"abstract":"This paper presents a nonlinear transistor model for millimeter wave HEMT devices. The model has been implemented in both parameter extraction and commercial circuit simulation software. It takes into account the nonlinearities of the gate-source and the gate-drain capacitances, and it allows accurately modeling of the transconductance as a function of the gate-source voltage. The model has been validated using a large-signal measurement system. Several nonlinear circuits comprising frequency doublers, oscillators and mixers have been designed and the measured results are in good agreement to the nonlinear simulation.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127754500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Distributed mixer for Doppler applications 多普勒应用的分布式混频器
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI: 10.1109/INMMC.1994.512536
S. Simion, S. Iordanescu, M. Dragoman
{"title":"Distributed mixer for Doppler applications","authors":"S. Simion, S. Iordanescu, M. Dragoman","doi":"10.1109/INMMC.1994.512536","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512536","url":null,"abstract":"The paper presents the simulation results of a nonlinear transmission line used as a distributed mixer. The computer simulation method is also presented. As an application, the distributed mixer is used as the main part of a Doppler circuit operating on a frequency of two times higher than the local oscillator frequency.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121410726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Rigorous determination of the stability of linear n-node circuits from network determinants and the appropriate role of the stability factor K of their reduced two-ports 从网络决定因素严格确定线性n节点电路的稳定性，以及它们的简化双端口稳定性因子K的适当作用
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI: 10.1109/INMMC.1994.512515
A. Platzker, W. Struble
{"title":"Rigorous determination of the stability of linear n-node circuits from network determinants and the appropriate role of the stability factor K of their reduced two-ports","authors":"A. Platzker, W. Struble","doi":"10.1109/INMMC.1994.512515","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512515","url":null,"abstract":"The generally accepted method of ascertaining the stability of microwave circuits, i.e. reducing the complicated N-node networks to Two-Ports between input and output, and requiring that K>1 and.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124568702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 70
An analytic method to optimum nonlinear microwave circuit design 非线性微波电路优化设计的一种解析方法
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI: 10.1109/INMMC.1994.512533
M. Yagoub, H. Baudrand
{"title":"An analytic method to optimum nonlinear microwave circuit design","authors":"M. Yagoub, H. Baudrand","doi":"10.1109/INMMC.1994.512533","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512533","url":null,"abstract":"In this paper, an analytic approach for optimum nonlinear circuit design is described. The method consists in determining, for each nonlinear component of the circuit, a closed volume including all the allowed powers at its terminal ports. The boundary of this volume, called \"characteristic surface\", allows extremum powers of nonlinear elements to be predicted and then optimum performance of the circuit to be deduced. Applied to practical transistor microwave oscillators, this procedure has shown good agreement between computed and measured values.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128655226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High efficiency 1 watt HBT power amplifier with harmonic tuning for mobile communications 用于移动通信的高效率1瓦HBT功率放大器，带谐波调谐
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI: 10.1109/INMMC.1994.512531
C. Pinatel, S. Vuye, C. Dubon-Chevalier, H. Wang
{"title":"High efficiency 1 watt HBT power amplifier with harmonic tuning for mobile communications","authors":"C. Pinatel, S. Vuye, C. Dubon-Chevalier, H. Wang","doi":"10.1109/INMMC.1994.512531","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512531","url":null,"abstract":"GaAlAs-GaAs power HBTs have been investigated for handsets in mobile cellular communication system at 1.8 GHz. Different HBTs operating classes have been compared using a simulated multiharmonic load-pull type optimization. The optimum operating class taking into account the power density and the thermal effect has been discussed. Class F amplifiers using HBTs or GaAs MESFETs have been investigated. An HBT amplifier has been designed and fabricated for DCS 1800. 1 W output power with a power-added efficiency of 50% has been measured.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123961842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and performance of MESFET, HBT, and PHEMT power amplifiers MESFET, HBT和PHEMT功率放大器的设计和性能
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI: 10.1109/INMMC.1994.512512
J. Komiak
{"title":"Design and performance of MESFET, HBT, and PHEMT power amplifiers","authors":"J. Komiak","doi":"10.1109/INMMC.1994.512512","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512512","url":null,"abstract":"The design and performance of MESFET, HBT, and PHEMT power amplifiers that have established state-of-the-art benchmarks for power output, power density, bandwidth, linearity, and efficiency is reported. The off-chip output match MESFET MMIC amplifier has demonstrated 24 Watts /spl plusmn/1.3 dB from 3.0 to 6.0 GHz, with a maximum power output of 33-Watts, at power-added efficiencies of 25% to 41.5%. The HBT MMIC amplifier covers 6 to 10 GHz and produces 1.25 to 2.15 Watts at 30% to 46% power-added efficiency. As a linear amplifier, this MMIC has demonstrated less than 0.8 dB differential between single and two tone saturated power with -15 dBc IMD, and -30 dBe IMD at 5 dB back-off from 2 dB gain compression. The internally matched PHEMT amplifier in single chip form has demonstrated 5 Watts at 50% power-added efficiency with 13 dB of power gain in the 3.7 to 4.2 GHz SATCOM band. At a two-tone output power of 3.5 Watts the IMD is -15 dBc, improving to -26 dBc at 5 dB back-off. The four chip units have achieved 20 Watts at 44% power-added efficiency with 13 dB of power gain.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"170 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122290494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modelling of bias dependent 1/f-noise in GaAs-MESFETs gaas - mesfet中偏置相关1/f噪声的建模
Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI: 10.1109/INMMC.1994.512517
R. Hanneberger, B. Roth, A. Beyer
{"title":"Modelling of bias dependent 1/f-noise in GaAs-MESFETs","authors":"R. Hanneberger, B. Roth, A. Beyer","doi":"10.1109/INMMC.1994.512517","DOIUrl":"https://doi.org/10.1109/INMMC.1994.512517","url":null,"abstract":"The building of a bias dependent model for 1/f-noise in GaAs-MESFETs is done in the following way: 1. Development of a program controlling the measurement system via the IEEE488-bus; 2. Measurement of an exemplary chosen MESFET manufactured by NEC in series production; 3. Elaboration of a mathematical model for the 1/f-noise proportionality factor with dependence on the bias point.","PeriodicalId":164713,"journal":{"name":"Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126008925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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