gaas - mesfet中偏置相关1/f噪声的建模

Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI:10.1109/INMMC.1994.512517

R. Hanneberger, B. Roth, A. Beyer

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引用次数: 2

摘要

建立gaas - mesfet中1/f噪声的偏置依赖模型的方法如下:通过ieee488总线控制测量系统的程序开发2. 对NEC在批量生产中选用的典型MESFET的测量3.阐述了与偏置点相关的1/f噪声比例系数的数学模型。

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Modelling of bias dependent 1/f-noise in GaAs-MESFETs

The building of a bias dependent model for 1/f-noise in GaAs-MESFETs is done in the following way: 1. Development of a program controlling the measurement system via the IEEE488-bus; 2. Measurement of an exemplary chosen MESFET manufactured by NEC in series production; 3. Elaboration of a mathematical model for the 1/f-noise proportionality factor with dependence on the bias point.

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Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits

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