Modelling of bias dependent 1/f-noise in GaAs-MESFETs

Abstract

The building of a bias dependent model for 1/f-noise in GaAs-MESFETs is done in the following way: 1. Development of a program controlling the measurement system via the IEEE488-bus; 2. Measurement of an exemplary chosen MESFET manufactured by NEC in series production; 3. Elaboration of a mathematical model for the 1/f-noise proportionality factor with dependence on the bias point.