应用于2-18 GHz GaAs芯片的分布式功率放大器的大信号设计标准，可获得高功率密度性能

Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI:10.1109/INMMC.1994.512528

M. Campovecchio, R. Hilal, B. Le Bras, M. Lajugie, J. Obregon

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引用次数: 0

摘要

本文提出了一种适用于分布式功率放大器的设计方法，该方法基于功率运行对场效应管负载的最优要求。栅极和漏极特性导纳的解析测定为优化设计提供了初始值和正确的方向。研究了宽带和高功率工作之间的最佳权衡。为了验证该方法，在德州仪器铸造厂制造了一个栅极外围为1.2 mm的场效应管放大器演示器。该MMIC放大器在2-18 GHz频段的功率密度性能为340 mW/mm，具有14.2%的功率增加效率，26.5%的漏极效率和连续波工作中1db压缩时26.1 dBm的输出功率。

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Large signal design criteria of distributed power amplifiers applied to a 2-18 GHz GaAs chip yielding high power density performances

A suitable and efficient design method of distributed power amplifiers, based on the optimum FET load requirement for power operation, is proposed in this paper. The analytical determination of the gate and drain line characteristic admittances provides both the initial values and right directions for an optimum design. The best tradeoffs between wide band and high power operation have been investigated. To validate the method, a FET amplifier demonstrator with a gate periphery of 1.2 mm has been manufactured at the Texas Instruments foundry. The MMIC amplifier demonstrated state of the art power density performance of 340 mW/mm over the 2-18 GHz band associated with 14.2% power added efficiency, 26.5% drain efficiency and 26.1 dBm output power at 1 dB compression in CW operation.

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Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits

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