基于测量结果的非线性晶体管建模

Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI:10.1109/INMMC.1994.512511

R. Quéré, J. Teyssier, J. Viaud, J. Obregon

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引用次数: 5

摘要

提出了一种表征微波测量的新方法。该方法基于脉冲条件下测量的I(V)和s参数，从而避免了捕获和热效应。测试装置能够为FET或HBT器件推导出精确的非线性模型，并用高功率FET进行了模型验证，证明了在整个工作域中需要精确的非线性建模。

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Nonlinear transistor modelling based on measurements results

A new method for the characterization of microwave measurements has been developed. This method is based upon I(V) and S-parameters measured under pulsed condition thus avoiding the trapping and the thermal effects. The ability of the test-set-up to derive accurate nonlinear models for FET or HBT devices is demonstrated and a model verification with a high power FET has been performed demonstrating the need for accurate nonlinear modelling in the whole working domain.

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Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits

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