Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium最新文献

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EUROSYSTEMS-an industry/university advanced system design education project eurosystems -一个行业/大学高级系统设计教育项目
P. Pochmuller, M. Glesner, P. Windirsch
{"title":"EUROSYSTEMS-an industry/university advanced system design education project","authors":"P. Pochmuller, M. Glesner, P. Windirsch","doi":"10.1109/UGIM.1991.148114","DOIUrl":"https://doi.org/10.1109/UGIM.1991.148114","url":null,"abstract":"Gives an overview on the activities planned within the EUROSYSTEMS advanced microelectronics system design project. The main objective of the project is to bring microelectronic system solutions into the world of system designers from small and medium sized companies, as well as universities. This can only be achieved with the use of advanced silicon compilation tools. The authors describe how the EUROSYSTEMS project is embedding into a whole framework of other European Community programs like JESSI SMI, EuroPACE, COMMETT, EUROCHIP, ASCIS, etc. and the the interactions between these programs.<<ETX>>","PeriodicalId":163406,"journal":{"name":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122411068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A review of a statistical tool set for the yield enhancement of integrated circuits 一种用于提高集成电路成品率的统计工具的综述
R. J. Joyce, R.D. Alderman, T. P. Djeu, J.C. Smith
{"title":"A review of a statistical tool set for the yield enhancement of integrated circuits","authors":"R. J. Joyce, R.D. Alderman, T. P. Djeu, J.C. Smith","doi":"10.1109/UGIM.1991.148136","DOIUrl":"https://doi.org/10.1109/UGIM.1991.148136","url":null,"abstract":"The authors describe a system that Harris Semiconductor has developed to aid in the analysis of circuit failures and predictions of functional yeilds. This system is based on a relational database in conjunction with the application of statistical tools. The core of the system is the relational database that uses the commercially available INGRES software. The system design is reviewed along with the supporting software and hardware tools used to create a tool box for yield analysis. Given the current levels of sophistication involved in manufacturing semiconductors, the flexibility of a relational database coupled with the correct analytical and statistical tools provides a powerful system for a yield enhancement resource.<<ETX>>","PeriodicalId":163406,"journal":{"name":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","volume":"589 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122848115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Electrical characterization of MOSIS-fabricated circuit elements mosis制造电路元件的电学特性
C. M. Stillo, R. Fox, D. Langford, D. J. Ferris
{"title":"Electrical characterization of MOSIS-fabricated circuit elements","authors":"C. M. Stillo, R. Fox, D. Langford, D. J. Ferris","doi":"10.1109/UGIM.1991.148131","DOIUrl":"https://doi.org/10.1109/UGIM.1991.148131","url":null,"abstract":"SPICE parameters and other data useful for analog design were determined for the MOSIS 2 mu m-double-metal double-poly p-well process. The channel-length modulation parameter LAMBDA and noise parameter KF were extracted for various sizes of n- and p-type MOSFETs with poly1 and poly2 gates. the zero-bias threshold voltage, bulk threshold parameters, saturation transconductance, lateral diffusion, and width correction of poly2 transistors were extracted. A vertical bipolar transistor is characterized.<<ETX>>","PeriodicalId":163406,"journal":{"name":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132699164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CAPE-VLSI implementation of a systolic processor array: architecture, design and testing CAPE-VLSI实现的一种收缩处理器阵列:架构、设计与测试
N. D. Hemkumar, K. Kota, Joseph R. Cavallaro
{"title":"CAPE-VLSI implementation of a systolic processor array: architecture, design and testing","authors":"N. D. Hemkumar, K. Kota, Joseph R. Cavallaro","doi":"10.1109/UGIM.1991.148123","DOIUrl":"https://doi.org/10.1109/UGIM.1991.148123","url":null,"abstract":"The singular value decomposition (SVD) is an important matrix factorization used in a variety of applications. The SVD exhibits better numerical stability due to the insensitivity to ill-conditioning or rank deficiency of matrices. However, the SVD is computationally intensive. The CORDIC array processor element (CAPE) is a single chip VLSI implementation of a processor element for the Brent-Luk-VanLoan systolic array which computes the SVD of a real matrix. The array utilizes CORDIC (coordinate rotation digital computer) arithmetic to perform the vector rotations and inverse tangent calculations in hardware. A six-chip prototype of the processor has been implemented as TinyChips using the MOSIS fabrication service. Experienced gain from designing the prototype helped in the design of integrated single-chip version. The chip has been implemented on a 5600*6900 mu die in a 2 mu n-well scalable CMOS process.<<ETX>>","PeriodicalId":163406,"journal":{"name":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","volume":"57 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134135935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A process design course utilizing micromechanical devices 一门利用微机械装置的工艺设计课程
M. Lu, M. Schmidt
{"title":"A process design course utilizing micromechanical devices","authors":"M. Lu, M. Schmidt","doi":"10.1109/UGIM.1991.148122","DOIUrl":"https://doi.org/10.1109/UGIM.1991.148122","url":null,"abstract":"Describes a course which is being developed at MIT aimed at incorporation of experimental microfabrication process design at the undergraduate level. They discuss the philosophy and organization of this course and explain how it has been implemented using micromechanical structures as the test vehicle. In particular, a silicon pressure sensor was successfully fabricated by a team of four students in one semester, and was tested and demonstrated to measure pressures in the range of 0-5 psi.<<ETX>>","PeriodicalId":163406,"journal":{"name":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114857617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The establishment of a multi-chip module foundry at RIT 在RIT建立多芯片模组代工厂
R. Pearson, P. R. Mukund
{"title":"The establishment of a multi-chip module foundry at RIT","authors":"R. Pearson, P. R. Mukund","doi":"10.1109/UGIM.1991.148157","DOIUrl":"https://doi.org/10.1109/UGIM.1991.148157","url":null,"abstract":"Faculty from the Rochester Institute of Technology's (RIT's) College of Engineering and College of Science have formed a group aimed at advanced multichip module (MCM) packaging of high-speed electronics systems. The authors discuss the cooperation between university, industry, and ultimately the government in an attempt to open up the field of MCM design, fabrication, and use in an educational setting. This group has begun fabrication of both a process evaluation module and actual application-specific modules. The key aspect of the RIT MCM effort is the establishment of an MCM foundry at RIT. The foundry would not be a large-volume foundry, but would provide for internal and supported external MCM fabrication needs. RIT offers a unique fabrication opportunity for MCMs and would like to work with other companies and universities to maximize the exposure of this technology.<<ETX>>","PeriodicalId":163406,"journal":{"name":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124806239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Process and device simulation at Harris Semiconductor 哈里斯半导体的工艺和器件仿真
R. Lowther
{"title":"Process and device simulation at Harris Semiconductor","authors":"R. Lowther","doi":"10.1109/UGIM.1991.148141","DOIUrl":"https://doi.org/10.1109/UGIM.1991.148141","url":null,"abstract":"The state of the art in the field of process and device simulation at Harris Semiconductor, universities, and vendors is reviewed. Particular emphasis is on interrelationships between these groups and between the supporters of the simulation tools at Harris and Harris process/device designers. Simulation of one of the advanced processes is discussed in detail to show how important simulation has become to process development and to illustrate many of the points discussed. Availability of the source code to the companies has allowed Harris programmers to make several incremental improvements at user's request in the time needed. Some of these enhancements are also discussed.<<ETX>>","PeriodicalId":163406,"journal":{"name":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122816645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Automated synthesis of macro/behavioral models for mixed analog/digital circuits, including complete power supply effects 用于混合模拟/数字电路的宏/行为模型的自动合成,包括完整的电源效果
R. Vogelsong, G. Morency, M. Chian
{"title":"Automated synthesis of macro/behavioral models for mixed analog/digital circuits, including complete power supply effects","authors":"R. Vogelsong, G. Morency, M. Chian","doi":"10.1109/UGIM.1991.148145","DOIUrl":"https://doi.org/10.1109/UGIM.1991.148145","url":null,"abstract":"The authors describe a system for automated generation of macro/behavioral models for SPICE-based simulation. These tools facilitate the generation of parametric models incorporating fixed and/or variable topologies for a wide range of analog and digital blocks. The macro/behavioral models can operate at several levels of complexity. The highest level models accurately emulate model parametric variation with power supply, transient supply currents, and supply interference effects. Two methodologies are available for defining behavioral models for logic blocks. An even-driven native logic simulator, FLOGIC, has been developed to seamlessly interact with the SPICE engine. FLOGIC provides a systematic and convenient method to create behavioral functions. These functions provide higher accuracy by including second-order effects such as dependencies of propagation delay and thresholds on input signals.<<ETX>>","PeriodicalId":163406,"journal":{"name":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123750260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A high speed VLSI chip for data compression 用于数据压缩的高速VLSI芯片
N. Ranganathan, S. Henriques
{"title":"A high speed VLSI chip for data compression","authors":"N. Ranganathan, S. Henriques","doi":"10.1109/UGIM.1991.148148","DOIUrl":"https://doi.org/10.1109/UGIM.1991.148148","url":null,"abstract":"The authors describe a high-speed VLSI chip that implements the LZ technique for data compression. The LZ technique for data compression involves two basic steps, parsing and coding. The LZ-based compression method is a powerful technique and gives high compression efficiency for text and image data. The architecture is systolic and uses the principles of pipelining and parallelism in order to obtain high speed and throughput. Hardware schemes are proposed for decompressing data that has been compressed using the LZ method. The data compression hardware can be integrated into real-time systems so that data can be compressed and decompressed on-the-fly. A prototype CMOS VLSI chip has been designed and fabricated using CMOS 2-micron technology implementing a systolic array of nine processors. The proposed hardware can yield compression rates of about 20 million characters per second.<<ETX>>","PeriodicalId":163406,"journal":{"name":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","volume":"166 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126739090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A fracture mechanics methodology for slow crack growth in thin polyimide films 聚酰亚胺薄膜中缓慢裂纹扩展的断裂力学方法
V. Kenner, S.F. Popelar, C. Popelar
{"title":"A fracture mechanics methodology for slow crack growth in thin polyimide films","authors":"V. Kenner, S.F. Popelar, C. Popelar","doi":"10.1109/UGIM.1991.148158","DOIUrl":"https://doi.org/10.1109/UGIM.1991.148158","url":null,"abstract":"A fracture mechanics methodology for assessing the influence of stress and defect size on the structural integrity and life expectancy of thin polyimide films is presented. The approach is a synergistic one that combines fracture mechanics analyses and experiments to quantify slow crack in the films. A viscoelastic fracture model is used to deduce the crack growth history from load-point displacement records measured during long-term fracture tests of the films. The rate of crack growth is found to depend very strongly upon the crack driving force as measured by the stress intensity factor. Hence, small changes in the stress intensity factor can produce dramatic changes in the crack growth rate in the materials investigated.<<ETX>>","PeriodicalId":163406,"journal":{"name":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121492494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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