mosis制造电路元件的电学特性

Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium Pub Date : 1991-06-12 DOI:10.1109/UGIM.1991.148131

C. M. Stillo, R. Fox, D. Langford, D. J. Ferris

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引用次数: 0

摘要

确定了MOSIS 2 μ m-双金属双聚p-井工艺的SPICE参数和其他对模拟设计有用的数据。分别提取了不同尺寸的n型和p型mosfet (poly1和poly2栅极)的通道长度调制参数LAMBDA和噪声参数KF。提取了零偏阈值电压、体积阈值参数、饱和跨导、横向扩散和宽度校正。描述了一种垂直双极晶体管。

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Electrical characterization of MOSIS-fabricated circuit elements

SPICE parameters and other data useful for analog design were determined for the MOSIS 2 mu m-double-metal double-poly p-well process. The channel-length modulation parameter LAMBDA and noise parameter KF were extracted for various sizes of n- and p-type MOSFETs with poly1 and poly2 gates. the zero-bias threshold voltage, bulk threshold parameters, saturation transconductance, lateral diffusion, and width correction of poly2 transistors were extracted. A vertical bipolar transistor is characterized.<>

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Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium

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